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Automotive-Compliant Silicon Carbide MOSFETs from Diodes Incorporated Enhance Automotive Subsystems Efficiency2 Min Read
Diodes Incorporated announced a further enhancement of its wide-bandgap product offering with the release of the DMWSH120H90SM4Q and DMWSH120H28SM4Q automotive-compliant Silicon Carbide (SiC) MOSFETs. These N-channel MOSFETs respond to the increasing market demand for SiC solutions that enable better efficiency and higher power density in electric and hybrid-electric vehicle (EV/HEV) automotive subsystems like battery chargers, on-board chargers (OBC), high-efficiency DC-DC converters, motor drivers, and traction inverters.
The DMWSH120H90SM4Q operates safely and reliably up to 1200VDS with a gate-source voltage (Vgs) of +15/-4V and has an RDS(ON) of 75mΩ (typical) at 15Vgs. This device is designed for OBCs, automotive motor drivers, DC-DC converters in EV/HEV, and battery charging systems.
The DMWSH120H28SM4Q operates at up to 1200VDS, +15/-4Vgs, and has a lower RDS(ON) of 20 mΩ (typical) at 15Vgs. This MOSFET has been designed for motor drivers, EV traction inverters, and DC-DC converters in other EV/HEV subsystems. Low RDS(ON) enables these MOSFETs to run cooler in applications that require high power density.
Both products have low thermal conductivity (RθJC=0.6°C/W), enabling drain currents up to 40A in the DMWSH120H90SM4Q and 100A in the DMWSH120H28SM4Q. They also have fast intrinsic and robust body diodes with low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q. This enables them to perform fast switching with reduced power losses.
By using the planar manufacturing process, Diodes has created new MOSFETs that offer more robust and reliable performance in automotive applications—and with increased drain current, breakdown voltage, junction temperature, and power rings as compared to previously released versions. The devices are available in a TO247-4 (Type WH) package, which offers an additional Kelvin sense pin. This can be connected to the source to optimize switching performance, enabling even higher power densities.
Original – Diodes Incorporated
LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBG1 Min Read
Diodes Incorporated (Diodes) introduced the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers.
The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (RθJC = 0.6°C/W), making it well-suited for applications running in harsh environments. This MOSFET has a low RDS(ON) (typical) of only 80mΩ (for a 15V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52nC to reduce switching losses and lower the package temperature.
This product is the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.
Original – Diodes Incorporated