Cambridge GaN Devices Tag Archive

  • Cambridge GaN Devices Introduces New Reference Designs

    Cambridge GaN Devices Introduces New Reference Designs

    2 Min Read

    Cambridge GaN Devices (CGD) is addressing higher power industrial applications with its ICeGaN™ technology which has already proved itself rugged, reliable and easy-to-use in high volume consumer devices. At the APEC 2024, IEEE Applied Power Electronics Conference and Exposition, the company is introducing new reference designs and showing demos which address the broad and diverse industrial market.

    Andrea Bricconi | Chief Commercial Officer, CGD

    “We are acutely aware of the increasing power requirements of industrial applications, and the need for high efficiency. For example, as the use of Artificial Intelligence (AI) proliferates, the power demanded by the exponential growth in power demanded by datacentres is growing almost exponentially. Other applications, such as solar inverters, amplifiers, transport and smart mobility, process control and manufacturing are also interested in GaN and the feedback we have received is that they love the simplicity of our ‘Drive it Like a MOSFET’ approach.”

    At APEC, visitors to the booth are able to see the progress that CGD is making to support both emerging and existing markets for GaN technology..

    With a high power density of 23 W/in3, GGD’s 350 W PFC/LLC reference design has an average efficiency of 93%, and a no-load power consumption of 150 mW. The CrM Totem Pole PFC + Half-Bridge LLC PSU has been realised using CGD’s 650 V, 55 mΩ, H2 series ICeGaN technology, and delivers 20 V / 17.5 A output.

    The result of a partnership deal struck last year with Neways Electronics, a 3 kW photo-voltaic inverter is used to boost the DC solar voltage to a stable DC link voltage. With a maximum efficiency of 99.22% due to zero-current switching, it is a perfect example of how CGD’s GaN HEMT structure is simple for engineers to use, since it employs a standard silicon controller from Analog Devices Inc.

    ICeGaN has been employed by AGD Productions in its compact AGD DUET amplifier which is rated at 300W 4Ω. This is the first time the company has used a 100% GaN power transistor design for both the power stage and the amplifier.

    Finally, the GaNext project, a consortium of 13 partners from three nations has delivered compact 1 kW intelligent power modules featuring integrated drive, voltage control and protection circuits using CGD’s ICeGaN.

    Original – Cambridge GaN Devices

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  • Cambridge GaN Devices to Share Extensive Program at APEC 2024

    Cambridge GaN Devices to Share Extensive Program at APEC 2024

    3 Min Read

    Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, will be present at the upcoming APEC 2024, IEEE Applied Power Electronics Conference and Exposition. In addition to having its largest ever booth at the show, the company will contribute with a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by datacentres as the use of Artificial Intelligence (AI) proliferates.

    GIORGIA LONGOBARDI | CHIEF EXECUTIVE OFFICER, CGD:

    “With datacentres now demanding 100kW per rack and predicting even more in the very near future, power system designers are looking to employ GaN devices in new architectures. At CGD we are addressing this challenge with new devices and reference designs which we will be discussing at APEC, along with many other applications where GaN can play a huge role in enabling sustainable electronics solutions that are more efficient, have high performance and are more compact.”

    CGD will present three papers at APEC:

    • Tuesday 27th February, 15.00-15.30 – ‘How ICeGaN™ technology can address the datacentre challenges that digitalisation brings’, with Andrea Bricconi, Chief Commercial Officer, CGD and Peter Di Maso, VP of Business Development (Americas) CGD.
    • Wednesday 28th February, 09.10-09.30 – ‘Evaluation of GaN HEMT dv/dt Immunity and dv/dt induced false turn-on energy loss’, with Nirmana Perera, Application Engineer, CGD.
    • Thursday 29th February, 09:45 – 10:10: ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, Director of Business Development & Technical Marketing, CGD.

    On booth 1553, CGD will present a range of demos designed to showcase industry’s first easy-to-use and scalable 650 V GaN HEMT family. ICeGaN™ H2 single-chip eMode HEMTs can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.

    Addressing the increase in power required by server and industrial applications,  CGD will show a 350 W PFC/LLC reference design using ICeGaN (650 V, 55 mΩ, H2 series). With a board power density of 23 W/in3, the bridgeless CrM Totem Pole PFC plus half-bridge LLC design has a peak efficiency of 95%, (93% average) and a no-load power consumption of 150 mW.

    ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD:

    “GaN is now accepted as a reliable and proven technology that is able to deliver high efficiency and power density simultaneously. Datacentres, with their insatiable need for power, are an obvious application for GaN, but there are many other consumer, industrial and automotive applications where GaN can also demonstrate the ability to be a disruptive technology. CGD has delivered industry’s most easy-to-use GaN technology – ICeGaN – and we are keen to share our ideas with the audience at APEC.”

    Original – Cambridge GaN Devices

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