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Innoscience has introduced two new all-GaN AC-DC reference designs that leverage the company’s third-generation gallium nitride (GaN) technology to deliver high efficiency, high power density, and compact form factors across applications ranging from consumer fast chargers to industrial power supplies. The new 140 W and 1 kW platforms are designed to accelerate customer development of next-generation power systems for laptops, robotics, e-mobility, telecommunications, and industrial equipment.
As applications including AI-enabled consumer devices, robotics, electric two-wheelers, gaming systems, and industrial automation continue to demand higher power in smaller form factors, designers are increasingly turning to GaN-based power conversion to improve efficiency while reducing system size.
By utilizing GaN throughout the primary power stage, the new reference designs minimize switching losses, enable higher switching frequencies, and reduce passive component size compared with conventional silicon-based implementations.
The INNDAD140C1 targets USB PD 3.1 fast charging applications including laptops, gaming consoles, and other high-performance portable electronics.
The design utilizes a Power Factor Correction (PFC) + Asymmetrical Half-Bridge (AHB) + synchronous rectification architecture with GaN devices throughout the primary stage.
Key specifications include:
- Input voltage: 90–264 VAC
- Maximum output: 28 V / 5 A (140 W)
- Peak efficiency: 96.21%
- 94.25% efficiency at 90 VAC
- Power density: 31.86 W/in³
- PCB dimensions: 60 × 60 × 20 mm
- Standby power: 100 mW
- EN55022 EMI compliant
The primary stage incorporates:
- ISG6117TM 700 V GaN device with integrated lossless current sensing for the PFC stage
- ISG6233AQH integrated 700 V half-bridge GaN device for the AHB stage
- INN100EBD035DAD 100 V GaN device with 3.5 mΩ RDS(on) for synchronous rectification
The design supports switching frequencies up to 140 kHz in the PFC stage and 130 kHz in the AHB converter while maintaining manageable thermal performance.
The reference platform targets:
- USB PD 3.1 laptop chargers
- Gaming console adapters
- High-performance consumer power adapters
The second platform, INNDAD1K0A1, addresses higher-power applications between 500 W and 1 kW, including robotics, battery chargers, telecommunications equipment, and industrial power supplies.
The design combines:
- Bridgeless Totem-Pole PFC
- High-frequency LLC resonant converter
- Synchronous rectification
using GaN devices throughout the primary switching stage.
Key specifications include:
- Input: 90–264 VAC
- Output: 36–54.6 V (48 V nominal)
- Output power:
- 500 W (90–176 VAC)
- 1 kW (176–264 VAC)
- Peak efficiency: 97.1%
- 95.1% efficiency at full load and 90 VAC
- Power density: 60.6 W/in³
- PCB size: 143 × 70 × 27 mm
The bridgeless totem-pole PFC employs:
- INN650TA050C
- ISG6123TA
The ISG6123TA integrates gate-drive clamping while providing:
- Over-current protection
- Over-temperature protection
- Miller clamp functionality
The LLC resonant stage utilizes INN650TA080BS GaN devices in TOLL packages with Kelvin Source connections to reduce parasitic inductance and support higher-frequency operation.
On the secondary side, INN150EB022EAD 150 V GaN devices provide synchronous rectification with low on-resistance and compatibility with standard DFN5×6 footprints.
The 1 kW reference design targets:
- Robot battery chargers
- Quadruped robot charging systems
- Electric motorcycle and e-bike chargers
- Telecommunications power supplies
- Networking equipment
- Industrial power supplies
- Horticultural lighting systems
With these two reference designs, Innoscience is expanding its GaN ecosystem beyond discrete devices by providing complete evaluation platforms that allow engineers to accelerate product development while achieving higher efficiency, greater power density, and reduced system size.
The company positions the 140 W and 1 kW platforms as development tools that demonstrate the performance advantages of all-GaN AC-DC power conversion across both consumer and industrial applications while helping customers shorten design cycles and accelerate time-to-market.
Original – Innoscience Technology
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Soitec and ZenSemi have announced a strategic collaboration to enable high-volume manufacturing of 300 mm Bipolar-CMOS-DMOS on Silicon-on-Insulator (BCD-on-SOI) technologies, targeting next-generation power electronics for artificial intelligence (AI) data centers, electric vehicles (EVs), humanoid robots, and industrial applications.
Under the partnership, Soitec will supply its advanced 300 mm Power-SOI engineered substrates to ZenSemi, supporting the development and production ramp of a new BCD-on-SOI manufacturing platform. By combining Soitec’s expertise in engineered semiconductor substrates with ZenSemi’s specialty foundry capabilities, the companies aim to provide fabless semiconductor companies and integrated device manufacturers (IDMs) with a high-performance manufacturing solution optimized for advanced power management integrated circuits (PMICs) and mixed-signal devices.
Compared with conventional BCD-on-bulk technologies, BCD-on-SOI provides significant advantages in both circuit integration and operational reliability.
The technology utilizes full dielectric isolation, which inherently eliminates parasitic latch-up while substantially reducing electrical crosstalk and parasitic coupling between circuit elements. These characteristics enable high-voltage power stages and sensitive low-voltage analog and digital control circuitry to be integrated onto a single chip with greater density and improved robustness.
As a result, BCD-on-SOI offers a highly reliable platform capable of supporting the increasing power density, performance, and functional safety requirements of modern power electronics.
The new 300 mm manufacturing platform is intended to address the growing demand for advanced power management solutions across several rapidly expanding markets, including:
- AI data center power distribution systems
- Electric vehicle battery management systems (BMS)
- Energy storage systems (ESS)
- Automotive power electronics requiring functional safety (FuSa)
- Humanoid robotics
- Industrial automation and power control
These applications require increasingly sophisticated mixed-signal devices capable of integrating precision analog circuitry with high-voltage power management while maintaining high reliability under demanding operating conditions.
The collaboration brings together complementary capabilities across the semiconductor value chain.
Soitec contributes its industry-leading engineered Power-SOI substrate technology, which has become a key enabling platform for advanced analog, RF, and power semiconductor applications.
ZenSemi contributes specialty foundry expertise, including process development and high-volume manufacturing capabilities focused on power electronics technologies. According to the companies, the partnership leverages ZenSemi’s experience in international power semiconductor manufacturing standards while building on Soitec’s established leadership in engineered substrate innovation.
René Jonker, Chief Product Officer at Soitec, stated that the collaboration demonstrates the growing maturity of China’s BCD-on-SOI ecosystem and establishes a new benchmark for advanced power electronics manufacturing by combining high-quality engineered substrates with specialized foundry capabilities.
ZenSemi also reported successful first-silicon validation with its lead customer.
The company demonstrated an 18-channel analog front-end (AFE) device implemented using the new SOI-based process, achieving approximately a 30% reduction in die size compared with traditional bulk BCD technologies.
According to ZenSemi, the result validates the inherent advantages of SOI technology for:
- Higher integration density
- Smaller chip area
- Improved circuit robustness
- Enhanced electrical isolation
Reducing die size not only lowers manufacturing costs but can also improve yield and enable greater functionality within the same silicon footprint.
As part of the partnership, ZenSemi plans to rapidly expand its 300 mm SOI-BCD manufacturing capacity to support commercial production.
Once fully ramped, the manufacturing platform is expected to serve both Chinese semiconductor design companies and international customers developing advanced power management ICs for automotive, AI infrastructure, industrial automation, and other high-growth applications.
Ruby Yan, Vice President of Sales & Marketing at ZenSemi, stated that the combination of Soitec’s engineered substrates and ZenSemi’s manufacturing platform will enable customers to develop smaller, more robust, and more cost-effective power ICs while addressing the rapidly growing demands of AI, automotive, and industrial markets.
By combining advanced substrate technology with high-volume specialty manufacturing, Soitec and ZenSemi aim to strengthen the ecosystem for next-generation BCD-on-SOI solutions and support the increasing power management requirements of AI, electrification, robotics, and industrial automation.
Original – Soitec
