Innoscience has introduced two new all-GaN AC-DC reference designs that leverage the company’s third-generation gallium nitride (GaN) technology to deliver high efficiency, high power density, and compact form factors across applications ranging from consumer fast chargers to industrial power supplies. The new 140 W and 1 kW platforms are designed to accelerate customer development of next-generation power systems for laptops, robotics, e-mobility, telecommunications, and industrial equipment.

As applications including AI-enabled consumer devices, robotics, electric two-wheelers, gaming systems, and industrial automation continue to demand higher power in smaller form factors, designers are increasingly turning to GaN-based power conversion to improve efficiency while reducing system size.

By utilizing GaN throughout the primary power stage, the new reference designs minimize switching losses, enable higher switching frequencies, and reduce passive component size compared with conventional silicon-based implementations.

The INNDAD140C1 targets USB PD 3.1 fast charging applications including laptops, gaming consoles, and other high-performance portable electronics.

The design utilizes a Power Factor Correction (PFC) + Asymmetrical Half-Bridge (AHB) + synchronous rectification architecture with GaN devices throughout the primary stage.

Key specifications include:

  • Input voltage: 90–264 VAC
  • Maximum output: 28 V / 5 A (140 W)
  • Peak efficiency: 96.21%
  • 94.25% efficiency at 90 VAC
  • Power density: 31.86 W/in³
  • PCB dimensions: 60 × 60 × 20 mm
  • Standby power: 100 mW
  • EN55022 EMI compliant

The primary stage incorporates:

  • ISG6117TM 700 V GaN device with integrated lossless current sensing for the PFC stage
  • ISG6233AQH integrated 700 V half-bridge GaN device for the AHB stage
  • INN100EBD035DAD 100 V GaN device with 3.5 mΩ RDS(on) for synchronous rectification

The design supports switching frequencies up to 140 kHz in the PFC stage and 130 kHz in the AHB converter while maintaining manageable thermal performance.

The reference platform targets:

  • USB PD 3.1 laptop chargers
  • Gaming console adapters
  • High-performance consumer power adapters

The second platform, INNDAD1K0A1, addresses higher-power applications between 500 W and 1 kW, including robotics, battery chargers, telecommunications equipment, and industrial power supplies.

The design combines:

  • Bridgeless Totem-Pole PFC
  • High-frequency LLC resonant converter
  • Synchronous rectification

using GaN devices throughout the primary switching stage.

Key specifications include:

  • Input: 90–264 VAC
  • Output: 36–54.6 V (48 V nominal)
  • Output power:
    • 500 W (90–176 VAC)
    • 1 kW (176–264 VAC)
  • Peak efficiency: 97.1%
  • 95.1% efficiency at full load and 90 VAC
  • Power density: 60.6 W/in³
  • PCB size: 143 × 70 × 27 mm

The bridgeless totem-pole PFC employs:

  • INN650TA050C
  • ISG6123TA

The ISG6123TA integrates gate-drive clamping while providing:

  • Over-current protection
  • Over-temperature protection
  • Miller clamp functionality

The LLC resonant stage utilizes INN650TA080BS GaN devices in TOLL packages with Kelvin Source connections to reduce parasitic inductance and support higher-frequency operation.

On the secondary side, INN150EB022EAD 150 V GaN devices provide synchronous rectification with low on-resistance and compatibility with standard DFN5×6 footprints.

The 1 kW reference design targets:

  • Robot battery chargers
  • Quadruped robot charging systems
  • Electric motorcycle and e-bike chargers
  • Telecommunications power supplies
  • Networking equipment
  • Industrial power supplies
  • Horticultural lighting systems

With these two reference designs, Innoscience is expanding its GaN ecosystem beyond discrete devices by providing complete evaluation platforms that allow engineers to accelerate product development while achieving higher efficiency, greater power density, and reduced system size.

The company positions the 140 W and 1 kW platforms as development tools that demonstrate the performance advantages of all-GaN AC-DC power conversion across both consumer and industrial applications while helping customers shorten design cycles and accelerate time-to-market.

Original – Innoscience Technology