• MCC Launches 80 V, 320 A TOLL-8L MOSFET to Shrink and Cool High-Current Power Stages

    MCC Launches 80 V, 320 A TOLL-8L MOSFET to Shrink and Cool High-Current Power Stages

    2 Min Read

    MCC introduced the MCTL1D0N08Y, an 80 V N-channel MOSFET in a compact TOLL-8L package engineered for high-current, fast-switching designs where thermal performance, efficiency, and footprint are critical. With a maximum RDS(on) of 1.0 mΩ at VGS = 10 V and a continuous drain current rating of 320 A, the device is aimed at reducing conduction losses in server-class SMPS, high-current DC-DC converters, industrial motor drives, and energy-storage inverters.

    The MOSFET leverages a split-gate trench architecture and a low-parasitic package layout to enable fast, clean transitions that lower switching losses and mitigate EMI. Compared with legacy D2PAK solutions, the TOLL-8L format shortens current paths and improves thermal flow, supporting higher switching frequencies, smaller magnetics and heatsinks, and more compact, reliable assemblies.

    Key specifications and design attributes
    • Drain-source voltage (VDS): 80 V, providing transient headroom for telecom, data center, and industrial environments
    • RDS(on): 1.0 mΩ max at VGS = 10 V for minimized conduction loss and higher efficiency
    • Continuous drain current: 320 A for demanding high-current stages
    • Package: TOLL-8L with low parasitics for improved switching behavior versus D2PAK
    • Thermal performance: RθJA ≈ 40 °C/W; junction temperature Tj(max) = 175 °C for reliable operation at elevated ambient conditions
    • Architecture: Split-gate trench design to balance ultra-low on-resistance with high switching speed

    By combining very low on-resistance with a high-current, thermally capable package, the MCTL1D0N08Y is positioned to enhance uptime, reduce system losses, and shrink power stages across a wide range of industrial and infrastructure applications.

    Original – Micro Commercial Components

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  • GlobalFoundries To Invest €1.1B in Dresden Expansion, Targeting One Million Wafers Annually by 2028

    GlobalFoundries To Invest €1.1B in Dresden Expansion, Targeting One Million Wafers Annually by 2028

    3 Min Read

    GlobalFoundries announced plans to invest €1.1 billion to expand manufacturing at its Dresden, Germany site, aiming to lift annual output to more than one million wafers by the end of 2028. The company says the expansion—known internally as project SPRINT—will make Dresden the largest facility of its kind in Europe, strengthening regional supply resilience and supporting fast-growing demand across automotive, IoT, defense, and critical infrastructure.

    The program is expected to receive support from the German federal government and the State of Saxony within the framework of the European Chips Act, pending EU approval anticipated later this year. In addition to capacity growth, the site will be upgraded to provide end-to-end European processes and data flows aligned with stringent semiconductor security requirements.

    German leaders welcomed the move during a visit to the Dresden campus. Chancellor Friedrich Merz called SPRINT “a commitment to Germany as an industrial and innovation location— and above all to the sovereignty of our country and Europe.” Saxony’s Minister President Michael Kretschmer said the billion-euro expansion underscores “Silicon Saxony’s” status as Europe’s leading microelectronics cluster and enhances European technological independence.

    GlobalFoundries notes that recent disruptions—particularly in automotive—have highlighted the vulnerability of global chip supply chains. Scaling Dresden is a core element of the company’s broader strategy to diversify and regionalize manufacturing, with parallel investments underway in Europe, the United States, and other regions. According to CEO Tim Breen, the expansion is designed to provide customers in critical industries with secure supply and differentiated technologies as “physical AI” applications accelerate.

    The added capacity will focus on GlobalFoundries’ specialty platforms featuring low-power operation, embedded secure memory, and advanced wireless connectivity. These technologies are central to next-generation vehicles, industrial and IoT systems, and high-reliability infrastructure. The company also expects the site to contribute to ongoing innovation in emerging compute architectures and quantum-related technologies through the next decade.

    European partners and customers emphasized the strategic impact. Leaders from Aumovio SE, Bosch, Infineon, NXP, Siemens, and SpiNNcloud pointed to stronger regional resilience, a deeper capabilities ecosystem in Saxony, and faster commercialization cycles for advanced mobility and AI hardware.

    The announcement follows GlobalFoundries’ recent participation in the “Made for Germany” initiative, which brings together companies committing long-term industrial investment in the country. Since 2009, the company has invested more than €10 billion in its Dresden operations, making it one of Germany’s largest industrial investments and a foundational asset for Europe’s semiconductor ambitions.

    Original – GlobalFoundries

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  • Thermo Fisher Debuts Helios MX1 PFIB-SEM to Speed In-Fab Semiconductor Analysis

    Thermo Fisher Debuts Helios MX1 PFIB-SEM to Speed In-Fab Semiconductor Analysis

    2 Min Read

    From smartphones to autonomous vehicles to AI infrastructure, today’s breakthroughs are built on nanometer-scale structures inside advanced silicon. As devices pack more performance into smaller geometries, minor defects can cascade into costly delays. Addressing that challenge, Thermo Fisher Scientific has introduced the Thermo Scientific Helios MX1 Plasma Focused Ion Beam Scanning Electron Microscope (PFIB-SEM), a system designed to bring high-resolution subsurface analysis directly into the semiconductor fabrication environment.

    Helios MX1 enables chipmakers to visualize and interrogate buried logic, memory, and advanced packaging features without leaving the fab. By placing PFIB-SEM capability on the production floor, manufacturers can move from problem identification to insight much faster, reducing the time engineers spend waiting for lab results and accelerating corrective actions.

    At the core of the platform is automated 3D reconstruction and metrology. The system mills, images, and measures complex device stacks with minimal operator intervention, generating volumetric datasets that expose defects and variability hidden beneath the wafer surface. This level of automation is intended to increase throughput and consistency while shortening time-to-data—an increasingly important metric as process complexity and analysis demand rise.

    Integrating lab-grade instrumentation into production facilities can also improve time-to-yield. By revealing failure mechanisms and structural anomalies early, Helios MX1 supports faster process tuning, tighter control windows, and more reliable ramp schedules across leading-edge nodes and advanced packaging flows.

    Thermo Fisher notes that the industry’s need for in-fab analysis has grown sharply, outpacing what traditional workflows can handle. With Helios MX1, fab teams gain a detailed three-dimensional view of subsurface structures where many critical issues originate, helping them make decisions with greater confidence and speed.

    Positioned as a fab-ready solution, Helios MX1 is aimed at customers working on applications ranging from medical devices and automated driving to high-performance and AI computing. By enabling rapid, in-situ insight, the system is designed to help manufacturers reduce cycle times, improve device performance, and sustain quality at scale.

    For organizations seeking to modernize process control and failure analysis in high-volume manufacturing, Helios MX1 offers a direct path to see more, sooner—without the delays of traditional lab detours.

    Original – Thermo Fisher Scientific

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