MCC introduced the MCTL1D0N08Y, an 80 V N-channel MOSFET in a compact TOLL-8L package engineered for high-current, fast-switching designs where thermal performance, efficiency, and footprint are critical. With a maximum RDS(on) of 1.0 mΩ at VGS = 10 V and a continuous drain current rating of 320 A, the device is aimed at reducing conduction losses in server-class SMPS, high-current DC-DC converters, industrial motor drives, and energy-storage inverters.
The MOSFET leverages a split-gate trench architecture and a low-parasitic package layout to enable fast, clean transitions that lower switching losses and mitigate EMI. Compared with legacy D2PAK solutions, the TOLL-8L format shortens current paths and improves thermal flow, supporting higher switching frequencies, smaller magnetics and heatsinks, and more compact, reliable assemblies.
Key specifications and design attributes
• Drain-source voltage (VDS): 80 V, providing transient headroom for telecom, data center, and industrial environments
• RDS(on): 1.0 mΩ max at VGS = 10 V for minimized conduction loss and higher efficiency
• Continuous drain current: 320 A for demanding high-current stages
• Package: TOLL-8L with low parasitics for improved switching behavior versus D2PAK
• Thermal performance: RθJA ≈ 40 °C/W; junction temperature Tj(max) = 175 °C for reliable operation at elevated ambient conditions
• Architecture: Split-gate trench design to balance ultra-low on-resistance with high switching speed
By combining very low on-resistance with a high-current, thermally capable package, the MCTL1D0N08Y is positioned to enhance uptime, reduce system losses, and shrink power stages across a wide range of industrial and infrastructure applications.
Original – Micro Commercial Components