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iDEAL Semiconductor has announced that its proprietary SuperQ™ technology has successfully achieved AEC-Q101 automotive qualification, marking the company’s entry into high-reliability and automotive-grade power semiconductor markets.
The company’s first automotive-qualified product, the iS20M028S1CQ, is a 200 V MOSFET featuring a low 25 mΩ RDS(on) and a maximum junction temperature rating of 175°C. The device is now entering mass production.
SuperQ technology represents a major innovation in silicon MOSFET performance, delivering significantly higher efficiency, lower switching losses, and improved conduction characteristics while retaining the proven robustness and reliability of silicon. This qualification confirms SuperQ’s ability to meet the demanding standards required for automotive applications, including electric vehicle powertrains, on-board chargers, and advanced driver-assistance systems (ADAS).
The iS20M028S1CQ extends iDEAL’s 200 V product family and is housed in a compact PDFN 5×6 mm package. The device offers up to 1.7 times better performance compared to competing solutions, combining high efficiency and low resistance with compatibility for high-volume, cost-efficient manufacturing.
“This is an important milestone that builds on the ruggedness and robustness of SuperQ, opening new markets for iDEAL,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “Automotive qualification validates our technology’s potential to drive efficiency in electrified transportation and beyond, empowering customers with more sustainable, more reliable power solutions.”
With this achievement, iDEAL strengthens its position in the power semiconductor industry, bringing advanced silicon-based innovation to applications that demand high efficiency, reliability, and performance under extreme conditions.
Original – iDEAL Semiconductor
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STMicroelectronics (ST) has announced its financial results for the third quarter ended September 27, 2025, reporting net revenues of $3.19 billion, a gross margin of 33.2%, operating income of $180 million, and net income of $237 million, or $0.26 per diluted share. On a non-U.S. GAAP basis, the company recorded operating income of $217 million and net income of $267 million, or $0.29 per diluted share.
President and CEO Jean-Marc Chery said third-quarter revenue came in slightly above the midpoint of the company’s guidance, supported by stronger demand in Personal Electronics. Automotive and Industrial segments performed as expected, while the Communications, Equipment, Computers, and Peripherals (CECP) segment remained in line with projections. Gross margin was slightly below expectations, mainly due to product mix effects within the Automotive and Industrial divisions.
Compared to the same quarter last year, ST’s net revenue decreased by 2%, while the non-U.S. GAAP operating margin declined to 6.8% from 11.7%. Non-U.S. GAAP net income fell to $267 million from $351 million a year earlier.
The company reported a book-to-bill ratio above one during the third quarter, with Automotive above parity and Industrial at parity—indicating ongoing demand stability in key end markets.
For the fourth quarter, ST expects net revenues around $3.28 billion, representing a sequential increase of about 2.9%, and a gross margin of approximately 35.0%, which includes around 290 basis points of unused capacity charges.
At the midpoint of its outlook, ST projects full-year 2025 revenues of approximately $11.75 billion, reflecting a 22.4% increase in the second half compared to the first half—an encouraging signal of recovery across its core markets. The company expects full-year gross margin to be about 33.8%.
Chery said ST has adjusted its capital expenditure plans to align with current market conditions, now targeting slightly below $2 billion in net Capex for 2025.
“Our strategic priorities remain clear,” he said. “We continue to accelerate innovation, execute our company-wide program to reshape our manufacturing footprint and cost structure, and strengthen free cash flow generation. These actions are positioning ST for sustainable growth as market conditions improve.”
Original – STMicroelectronics
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Micro Commercial Components (MCC) has introduced its new 1200V Trench Field Stop (TFS) IGBT series, designed to deliver high efficiency, durability, and flexibility for demanding power switching applications in both industrial and automotive sectors.
The new IGBT family is housed in the proven TO-247AB package and available in current ratings from 40A to 80A. These devices feature low conduction and switching losses, smooth high-speed transitions, and integrated soft-recovery anti-parallel diodes to ensure low electromagnetic interference and simplified filter design.
Automotive-grade versions of the TFS IGBTs are AEC-Q101 qualified and rated for a maximum junction temperature of 150°C, while industrial variants can operate up to 175°C for extended thermal performance and longer service life. The series is well suited for motor drives, uninterruptible power supplies (UPS), electric vehicle traction and auxiliary systems, and high-power converters that require both efficiency and rugged reliability.
The trench field-stop design provides several key advantages, including:
- Low forward voltage and reduced switching losses, improving overall efficiency and minimizing heat generation
- Integrated fast, soft-recovery diodes for lower EMI and simplified circuit design
- 1200V breakdown voltage with a positive temperature coefficient, ensuring stable current sharing and robust short-circuit protection
Key Features and Benefits
- TO-247AB package for standard compatibility and easy thermal management
- 1200V breakdown voltage for ample design margin
- Wide current range from 40A to 80A
- Fast and smooth switching performance for both hard- and soft-switching topologies
- Low conduction and switching losses for improved system efficiency
- Integrated soft-recovery anti-parallel diode
- Positive temperature coefficient for stable parallel operation
- Automotive-grade options qualified to AEC-Q101 (TJ max = 150°C)
- Industrial-grade variants rated up to TJ max = 175°C
- High short-circuit endurance and avalanche ruggedness
- Suitable for high-frequency operation with reduced EMI
MCC’s 1200V TFS IGBT series provides engineers with a reliable, efficient, and cost-effective solution for next-generation industrial drives, EV power systems, and high-performance power conversion designs.
Original – Micro Commercial Components
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Efficient Power Conversion Corporation (EPC) has announced the release of a high-efficiency, high-power-density 5 kW AC-to-48 V DC reference design. The new system highlights the full performance potential of GaN technology for next-generation data center, server, and AI power architectures.
The complete 5 kW solution includes two modular systems: the EPC91107KIT 4-Level Totem-Pole Power Factor Correction (PFC) stage and the EPC91110KIT Input-Series Output-Parallel (ISOP) LLC Converter. Together, they deliver up to 96.5% system efficiency with a combined power density of 116 W/in³. The design meets Open Rack V3 (OCP ORv3) size specifications and achieves superior performance with significantly smaller size and lower cost compared to traditional silicon-based solutions.
The EPC91107KIT front-end converts 240 VAC to 400 VDC using a 4-Level Flying Capacitor Totem-Pole PFC topology built around EPC2304 (200 V, 5 mΩ) GaN FETs. This stage achieves up to 98.5% efficiency at 5 kW and delivers 25 A input current at a 240 VAC nominal input with a 140 kHz switching frequency. It also reduces the size of the PFC inductor by nine times and the EMI filter by 40% compared to conventional two-level designs.
The EPC91110KIT isolation stage steps down the 400 V bus to 50 VDC using four 1.375 kW LLC converter modules in an ISOP configuration. Each module, built with EPC2305 (150 V, 3 mΩ) GaN FETs, achieves 98.2% peak efficiency, combining for a total output of 5.5 kW.
As AI workloads drive unprecedented demand for efficient and compact power solutions, GaN technology enables smaller magnetics, reduced thermal requirements, and higher switching frequencies—leading to higher power density and lower system costs.
EPC’s 5 kW reference design is scalable to larger systems, supporting 33 kW, 48 kW, and even 108 kW rack architectures. This makes it ideal for next-generation AI servers, data centers, and telecom power shelves that demand maximum efficiency and reliability.
“GaN is transforming power conversion for AI and data centers, delivering higher efficiency, smaller size, and lower cost—without compromising scalability or reliability,” said Alex Lidow, CEO of EPC.
All reference design boards and GaN devices are available now through authorized distributors, including Digi-Key.
The 5 kW reference design demonstrates EPC’s continued leadership in GaN-based power conversion, showcasing how advanced wide bandgap devices can deliver superior efficiency, scalability, and performance for AI-driven and high-performance computing applications.
Original – Efficient Power Conversion
