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Wolfspeed, Inc. announced the commercial launch of its 200mm SiC materials products, marking a significant milestone in the company’s mission to accelerate the industry’s transition from silicon to silicon carbide. After initially offering 200mm SiC to select customers, the positive response and benefits warranted a commercial release to the market.
Wolfspeed is also offering 200mm SiC epitaxy for immediate qualification, which, when paired with the company’s 200mm bare wafers, delivers breakthrough scalability and improved quality, enabling the next generation of high-performance power devices.
“Wolfspeed’s 200mm SiC wafers are more than an expansion of wafer diameter – it represents a materials innovation that empowers our customers to accelerate their device roadmaps with confidence,” said Dr. Cengiz Balkas, Chief Business Officer. “By delivering quality at scale, Wolfspeed is enabling power electronics manufacturers to meet growing demand for higher-performing, more efficient silicon carbide solutions.”
The improved parametric specifications of the 200mm SiC bare wafers at 350µm thickness and enhanced, industry-leading doping and thickness uniformity of the 200mm epitaxy enables device makers to improve MOSFET yields, accelerate time-to-market, and deliver more competitive solutions across automotive, renewable energy, industrial, and other high-growth applications. These product and performance advancements for 200mm SiC can also be applied to our continuous learnings for 150mm SiC materials products.
“This advancement reflects Wolfspeed’s long-standing commitment to pushing the boundaries of silicon carbide materials technology,” said Balkas. “This launch demonstrates our ability to anticipate customer needs, scale with demand, and deliver the materials foundation that makes the future of more efficient power conversion possible.”Original – Wolfspeed
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Mitsubishi Electric Corporation announced that it has developed a new compact version of its DIPIPM power semiconductor modules specifically for use in consumer and industrial equipment such as packaged air conditioners and heat pump heating and hot water systems. The new Compact DIPIPM series of products comprises the PSS30SF1F6 (rated current 30A / rated voltage 600V) and the PSS50SF1F6 (rated current 50A / rated voltage 600V), and samples will begin shipping on September 22.
By utilizing reverse-conducting insulated-gate bipolar transistors (RC-IGBTs), the module’s footprint has been reduced to almost 53% of that of the company’s conventional Mini DIPIPM Ver.7 series of products, enabling more compact inverter substrates in packaged air conditioners and other applications. The new products will be exhibited at Power Conversion and Intelligent Motion (PCIM) Asia Shanghai 2025 in Shanghai, China, from September 24 to 26.
Power semiconductors are key devices that efficiently convert electricity from DC to AC, and demand for them has accordingly been rising in recent years. Power semiconductor modules for packaged air conditioners and heat pump heating and hot water systems are used in the power conversion equipment of inverters that control outdoor unit compressors and fans.
Globally, the shift to inverters is gathering pace in order to achieve energy savings in air conditioning systems, contributing to the realization of a decarbonized society. In this context, there is a growing need for more compact outdoor packaged air conditioner and heat pump components, not only to improve performance but also to reduce their footprint, leading to demand for smaller components such as inverter substrates.
In 1997 Mitsubishi Electric commercialized the DIPIPM intelligent power semiconductor module with a transfer mold structure; this integrated switching elements and the control ICs that drove and protected them. These have since been widely adopted in inverters for air conditioners, washing machines, heating and hot water systems, and industrial motors, helping to achieve a more compact inverter design and improved energy efficiency. The footprint of the company’s new Compact DIPIPM series of power semiconductor modules for consumer and industrial equipment has been reduced by approximately 47% compared to conventional products.
Through the adoption of RC-IGBTs, Mitsubishi Electric has achieved a smaller module size, contributing to the compact design of inverter substrates. Additionally, the new interlock function for arm short-circuit protection simplifies its design. The insulation distance from the terminals to the heat sink is equivalent to that of conventional products, making replacement easy.
Furthermore, in response to the growing demand for heat pump air conditioning systems in regions with cold winters such as North America and Northern Europe, Mitsubishi Electric has developed a power semiconductor module that operates stably at low temperatures, achieving a continuous operating temperature lower limit of -40°C. This is boosting widespread adoption of inverter-equipped air conditioning systems in cooler regions and helping to achieve carbon neutrality.
Original – Mitsubishi Electric
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Nexperia introduced its first portfolio of 40-100 V automotive MOSFETs in industry standard micro-lead packages designed for use in body control, infotainment, reverse battery protection and LED lighting applications. This launch initially features 19 devices in MLPAK33-WF as well as Nexperia’s first 40 V device in MLPAK56-WF, both incorporating wettable flanks (-WF) to enable reliable solder joint inspect and AOI, thereby providing designers with a range of MOSFETs that combine flexibility of choice, a smart cost-performance balance and the capacity to quickly ramp up high-yield production, without compromising on safety.
Vehicle architectures are evolving from ECU-based control, where each function has its own unit, to domain control, and now towards zonal architectures that consolidate applications under zonal control units. At the same time, the rise of electronics-rich vehicles and the growing integration of infotainment and smart features are prompting OEMs to rethink traditional automotive design requirements to support advanced, consumer-style applications within vehicles.
This shift is driving higher MOSFET demand in DC/DC converters, inverters, and battery management systems. Operating at lower temperatures, these systems can leverage cost-effective micro-leaded devices such as Nexperia’s new MLPAK33-WF and MLPAK56-WF. Alongside their cost-performance balance, these new components meet the traditional requirements of automotive designs: AEC-Q101 qualified, robust performance, excellent board-level reliability, and side-wettable flanks supporting automated optical inspection (AOI), making them ideally suited to the evolving automotive landscape.
This new portfolio allows designers to choose from a wide selection of micro-lead MOSFETs with various RDS(on) values, offered in standardized footprints that simplify design-in and allow engineers to seamlessly migrate between MOSFET packaging, making it easy to adopt Nexperia MLPAK devices. In addition, they deliver rugged performance, excellent switching capability (low spiking and ringing) and high-power density. The high avalanche rating of these MOSFETs reduces the need to use free-wheeling diodes or bulky snubbers in switching circuits. This lowers component count and board area, thereby helping to reduce the overall system cost.
This launch marks the first of many MLPAK releases from Nexperia, reinforcing commitment to scalable, high-performance MOSFET solutions. By uniting proven quality and reliability, with supply chain strength, Nexperia enables design engineers to deliver efficient systems with confidence.
Original – Nexperia
