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Toshiba Electronic Devices & Storage Corporation has developed innovative technology that significantly reduces losses in silicon carbide (SiC) trench MOSFETs while enhancing UIS ruggedness. Additionally, Toshiba has developed SiC semi-super junction Schottky barrier diodes (SJ-SBDs) that suppress the increase in on-resistance at high temperatures. These advances are expected to greatly improve the reliability and efficiency of devices used in power conversion applications, such as electric vehicles and renewable energy systems.
Power semiconductors, which supply and control power, are essential for energy-saving in all electrical equipment, and achieving carbon neutrality. With the electrification of automobiles and the miniaturization of industrial equipment, demand for power semiconductors is expected to continue to grow. This is particularly true of SiC MOSFETs, which are gaining attention as next-generation devices that improve better power conversion efficiency than current silicon (Si) MOSFETs.
Among them, SiC trench MOSFETs, where gates are formed in a trench to reduce on-resistance, and SiC Schottky barrier diodes (SBDs), which efficiently convert power by metal semiconductor junction on SiC, are widely used in high-efficiency power conversion applications, such as electric vehicles and renewable energy systems. However, these applications require operation in high-temperature environments that pose challenges for reliability and efficiency improvement.
SiC trench MOSFETs must protect the gate oxide from high electric fields. However, the relationship between UIS ruggedness and the grounding resistance of the electric field protection structure has not been clearly understood, making it difficult to achieve both high gate oxide reliability and low on-resistance.
In addition, although SiC SBDs can operate at higher temperatures than conventional Si SBDs, they must be able to handle increased resistance at elevated temperatures, which leads to higher on-resistance.
Toshiba has developed two key technologies to address these issues.
Technology to Improve UIS Ruggedness of SiC Trench MOSFETs
Figure 1. Structure of SiC Trench MOSFET and Location of Bottom p-well Toshiba has confirmed that forming a protective layer called a Bottom p-well in the trench of SiC trench MOSFETs (Figure 1) and making appropriate reductions in the grounding resistance of the Bottom p-well improves UIS ruggedness. This clarified the previously uncertain relationship between UIS ruggedness and the grounding resistance of the electric field protection structure. The SiC trench MOSFETs prototyped by Toshiba reduced on-resistance by approximately 20% compared to conventional planar SiC MOSFETs (Figure 2).
Figure 2. Comparison of On-Resistance Between Conventional Planar SiC MOSFET and SiC Trench MOSFET (Toshiba test results) Improvement of SiC SJ-SBD Characteristics
Figure 3. Structure of conventional SiC SBDs and SiC SJ-SBDs Toshiba also developed SiC SJ-SBDs that reduce resistance in the drift layer by placing pillars within in that suppress resistance increases at high temperatures (Figure 3 (b)). By comparing the on-resistance changes in conventional SiC SBDs (Figure 3 (a)) and SiC SJ-SBDs at different temperatures, Toshiba confirmed the lower on-resistance of the SiC SJ-SBDs, especially at high temperatures (Figure 4). This is due to the SJ structure, which achieves a flat electric field distribution and reduce on-resistance. The 650V SiC SJ-SBDs developed by Toshiba reduces on-resistance by approximately 35% at high temperatures of 175°C (448.15K) compared to conventional SiC SBDs.
Figure 4. Comparison of On-Resistance and Temperature Dependence Between Conventional SiC SBD and SiC SJ-SBD (Toshiba test results) These two technologies further reduce loss in SiC trench MOSFETs and SiC SBDs, improving the reliability and efficiency of devices for use in future high-efficiency power conversion applications. Such application is particularly expected in fields such as electric vehicles and renewable energy systems. Toshiba aims to further improve the technologies and achieve early practical application.
Toshiba presented details of the new technologies at the 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025 held in Kumamoto from June 1 to 5. This achievement was based on results obtained from a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).
Original – Toshiba
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Renesas Electronics Corporation announced the appointment of Zaher Baidas as Senior Vice President and General Manager of Power, effective July 1, 2025. Zaher will be responsible for overseeing the company’s power management and discrete product portfolios and for driving the execution of Renesas’ global power strategy.
Zaher, currently Vice President of the Timing Division within the Analog & Connectivity product group, joined Renesas in 2019 through the acquisition of Integrated Device Technology, Inc. He brings a strong engineering background and a proven track record of driving innovative solutions. His global mindset and business acumen will be instrumental in accelerating transformation and enhancing Renesas’ power business performance on a global scale. Zaher will join Renesas’ leadership team and will report directly to CEO Hidetoshi Shibata.
Zaher succeeds Chris Allexandre, who will leave Renesas on June 30, 2025. Chris had led and transformed the Power business since assuming the role, aligning it closely with the company’s strategic priorities and significantly improving operational performance. Prior to this role, he served as Chief Sales & Marketing Officer, where his leadership accelerated the company’s shift toward high-growth segments, restructured the go-to-market strategy, and strengthened the foundation for solutions-led growth. Renesas extends its sincere appreciation to Chris for more than six years of outstanding and dedicated service during a period of transformation, helping position the company for long-term success.
Original – Renesas Electronics
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Ideal Power Inc. announced a partnership with Kaimei Electronic Corp., a leading manufacturer of electrolytic capacitors, resistors and motor fans. Under this agreement, Kaimei Electronic Corp. will distribute Ideal Power’s products throughout Asia.
Kaimei Electronic Corp. and Ideal Power are partnering to promote Ideal Power’s innovative B-TRAN® technology to Kaimei’s existing and prospective customer base alongside their own product portfolio. B-TRAN® will be the first product line for which Kaimei will operate as a third-party distributor.
Kaimei has had decades of success as a manufacturer of high value-added electronic components selling into 60 countries in Asia, Europe, and the Americas. Kaimei and Ideal Power share many target markets including industrial, automotive, renewable energy, energy storage, UPS and EV charging. The partnership will leverage Kaimei’s existing sales expertise and customer network as the same customers for Kaimei’s products are also potential customers for B-TRAN®.
“We are excited to enter into this distribution partnership with Kaimei. They already serve customers in B-TRAN® target industrial, utility and automotive markets in Asia. Asia is the world’s largest market for power electronics, and Asian companies typically move faster than their European and U.S. counterparts in adopting new technologies. We look forward to collaborating with Kaimei to secure orders to drive revenue growth and potentially lead to additional B-TRAN® design wins,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
The distribution agreement with Kaimei aligns with Ideal Power’s asset-light business model. Ideal Power leverages the large investment already made in silicon processing, packaging, distribution, demand creation and support infrastructure. This business model allows the Company to continue focusing on disruptive B-TRAN® technology improvements and commercialization while driving working capital efficiency.
Original – Ideal Power
