• Navitas Semiconductor Announces Corporate Governance Enhancements to Support Future Growth

    Navitas Semiconductor Announces Corporate Governance Enhancements to Support Future Growth

    3 Min Read

    Navitas Semiconductor announced actions by its board of directors to advance the company’s growth strategy. These corporate governance enhancements reflect the board’s ongoing commitment to stockholder engagement and value creation for all Navitas stakeholders.

    “We have taken an important step forward by strengthening our corporate governance and further aligning the board’s interests with those of our stockholders,” said Gene Sheridan, Navitas’ chief executive officer and co-founder. “We are confident that we have the right strategy in place to continue delivering disruptive advancements in our target markets. With the updates announced today, our board and leadership team are well positioned to capitalize on Navitas’ multi-billion dollar market opportunities and generate value.”

    Board and Leadership Updates

    Navitas’ board has appointed Richard Hendrix as its chair, effective immediately. Mr. Hendrix joined Navitas’ board as an independent director in 2021 and is chair of the audit committee and a member of the compensation committee. He has more than 30 years of capital markets leadership and advisory experience. He succeeds Mr. Sheridan, who will remain on the board as a director and continue as Navitas’ chief executive officer.

    “I am honored to chair Navitas’ board as we work to advance our strategy and continue to enable a revolution in power electronics. Our board remains committed to maintaining strong corporate governance and creating value for our stockholders,” said Mr. Hendrix.

    Daniel Kinzer, Navitas’ chief technology officer, chief operating officer and co-founder, has resigned from his executive roles and as a member of the board. Mr. Kinzer will continue to serve in an advisory role supporting technology and product innovation in the area of GaN technology.

    Mr. Hendrix continued, “On behalf of the Board, I would like to thank Dan for his invaluable vision and leadership in building Navitas into the only pure-play, next-generation power semiconductor company. We appreciate his continued contributions as we embark on this next chapter of the company’s growth.”

    In connection with Mr. Kinzer’s departure from the board, the board intends to appoint an independent director to stand for election as a Class I director at the 2025 annual stockholders’ meeting, along with Mr. Sheridan and Ranbir Singh. Additional details will be provided in the Company’s definitive proxy statement for the meeting to be filed with the U.S. Securities and Exchange Commission (SEC).

    Formation of Executive Steering Committee

    Navitas also announced the formation of an executive steering committee of the board, which will be responsible for a number of initiatives that include oversight and input on:

    • Expense management and defining an accelerated path to profitability;
    • Acceleration of the company’s product and technology roadmap;
    • Enhancement of the company’s go-to-market and partnership strategies; and
    • Appointment of operating, sales and technology executives.

    The committee will work closely with Mr. Sheridan to ensure the effective execution of these strategic priorities. The committee will be chaired by Dr. Singh and include Mr. Hendrix and David Moxam, chair of the compensation committee and a member of the audit committee, as members.

    In connection with the actions announced today, the company has entered into a cooperation agreement with Dr. Singh following constructive engagement. Details of the agreement will be provided in forthcoming SEC filings.

    Original – Navitas Semiconductor

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  • AOS to Showcase Breakthrough Power Management Innovations for Key Applications at PCIM 2025

    AOS to Showcase Breakthrough Power Management Innovations for Key Applications at PCIM 2025

    3 Min Read

    Alpha and Omega Semiconductor Limited announced it will exhibit and demonstrate the advancements it has made in delivering application-specific power semiconductor, power IC and module solutions at PCIM 2025. Attendees will learn about the company’s groundbreaking power management product innovations that solve critical design challenges in multiple strategic markets and match key application specifications. The AOS products highlighted at PCIM will include:

    Booth highlights

    • Automotive and Industrial: AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology.  This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.
       
    • Intelligent Power ModulesMega IPM-7: AOS has integrated its latest G2 IGBT and high-voltage gate driver into the world’s most compact package design, delivering mega power of up to 100W for motor control applications. The portfolio covers 600V / (1A-3A) in various package options (Mega IPM-7D, IPM-7DT, IPM-7E) that are ideal solutions for various design requirements.
       
    • Motor Drive ICs: AOS will announce a new range of 60V and 100V driver ICs for power tools, outdoor garden equipment, and e-mobility applications, including a 100V half-bridge driver IC, a 100V 3-phase driver IC, and a 60V 3-phase driver IC. These products all support 100 percent duty cycle operation. Plus, demo boards using AOS’ motor driver IC and AlphaSGT™ MOSFETs (30V-150V) will be featured.
       
    • eFuse: AOS’ Hot Swap Controllers and Power MOSFET combined into a single eFuse package. The eFuse can improve the system’s reliability by isolating the load from the main power rails in case of a fault condition. AOS will announce its latest 12V/60A eFuse products in May 2025.
       
    • State-of-the-art Packaging: AOS’ highly efficient 25V-150V MOSFETs are available in advanced packaging, including a double-sided cooling DFN 5×6 that delivers industry-leading thermal resistance. Also available are two robust packages, LFPAK 5×6 package and the GLPAK™, which features gull-wing leads for enhanced board reliability and larger copper clips that significantly improve current carrying capability. In addition, the GTPAK™ is a topside cooling package designed with a large exposed pad for more efficient heat transfer.

    Original – Alpha and Omega Semiconductor

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  • Renesas Electronics Reported Financial Results for Q1 2025

    Renesas Electronics Reported Financial Results for Q1 2025

    1 Min Read

    Renesas Electronics Corporation announced its financial results for the first quarter ended March 31, 2025.

    Key Highlights:

    • Revenue: 366.7 billion yen (approximately $2.37 billion), representing a 1.7% year-over-year increase.
    • Gross Margin: 57.8%, maintaining strong profitability levels.
    • Operating Income: 96.9 billion yen (approx. $627 million), a 6.4% increase year-over-year.
    • Net Income: 70.5 billion yen (approx. $455 million), up 5.8% compared to Q1 2024.

    Company’s focus on enhancing profitability and maintaining operational discipline allowed it to deliver a resilient performance despite mixed demand conditions in key end markets, including automotive and industrial sectors.

    Strategic Progress: Renesas continues its investment in innovation and strategic initiatives:

    • Advancements in power management, analog, and microcontroller products.
    • Strengthening leadership in automotive solutions, including ADAS and electrification.
    • Expanding its reach into the industrial automation and energy sectors.

    Outlook for Q2 2025:

    • Revenue Guidance: Approximately 380 billion yen.
    • Gross Margin Forecast: Around 58.0%.

    Renesas remains committed to navigating global economic uncertainty through cost optimization, diversified product offerings, and a strong focus on next-generation technologies.

    Original – Renesas Electronics

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  • STMicroelectronics Published Q1 2025 Financial Results

    STMicroelectronics Published Q1 2025 Financial Results

    2 Min Read

    STMicroelectronics has announced its financial results for the first quarter of 2025, reflecting both the challenges of a shifting market and the company’s strategic transformation efforts.

    Key Highlights:

    • Net Revenues: $2.52 billion, down 27.3% year-over-year
    • Gross Margin: 33.4%
    • Operating Income: $3 million
    • Net Income: $56 million, representing an 89.1% drop compared to Q1 2024

    CEO Jean-Marc Chery acknowledged that while Q1 revenues aligned with expectations, the decline was mainly attributed to lower performance in the Automotive and Industrial sectors, partially offset by stronger results in Personal Electronics.

    Despite the decline, ST’s book-to-bill ratio improved, particularly within Automotive and Industrial, signaling stronger order intake compared to shipments.

    Looking Ahead:

    • ST expects Q2 2025 net revenues of approximately $2.71 billion, a sequential growth of 7.7%.
    • Gross margin is forecasted to remain steady at around 33.4%, impacted by unused capacity charges.
    • The company is maintaining its 2025 net CapEx target between $2.0 billion and $2.3 billion to support its manufacturing reshaping initiatives.

    Strategic Initiatives: STMicroelectronics is pushing forward with its company-wide restructuring program, aiming to reshape its manufacturing footprint and resize its global cost base. The program targets annual cost savings in the high triple-digit million-dollar range by the end of 2027.

    Chery emphasized that ST views Q1 2025 as the bottom of the cycle and is focused on innovation, manufacturing efficiency, and cost control to navigate the uncertain global environment.

    Segment Performance:

    • Analog, Power & Discrete, MEMS and Sensors (APMS): Revenues down 28% YoY
    • Power and Discrete Products (P&D): Revenues fell 37.1% YoY, operating margin turned negative
    • Embedded Processing (EMP): Revenues declined 29.1% YoY
    • RF & Optical Communications (RF&OC): Revenues down 19.2% YoY

    Financial Strength:

    • Free cash flow turned positive at $30 million, compared to a negative $134 million a year ago.
    • Net financial position remained robust at $3.08 billion.

    Original – STMicroelectronics

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  • ROHM Unveils High Power Density SiC Modules in HSDIP20 Package, Redefining OBC Efficiency and Miniaturization for xEVs

    ROHM Unveils High Power Density SiC Modules in HSDIP20 Package, Redefining OBC Efficiency and Miniaturization for xEVs

    2 Min Read

    ROHM has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications.

    In recent years, the rapid electrification of cars is driving efforts to achieve a decarbonized society. Electric vehicles are seeing higher battery voltages to extend the cruising range and improve charging speed, creating a demand for higher output from OBCs and DC-DC converters. At the same time, there is an increasing need in the market for greater miniaturization and lighter weight for these applications, requiring technological breakthroughs to improve power density – a key factor – while enhancing heat dissipation characteristics that could otherwise hinder progress.

    ROHM’s HSDIP20 package addresses these technical challenges that were previously becoming difficult to overcome with discrete configurations, contributing to both higher output and the downsizing of electric powertrains.

    The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation).

    This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.

    Going forward, ROHM will continue to advance the development of SiC modules that balance miniaturization with high efficiency while also focusing on the development of automotive SiC IPMs that provide higher reliability in a smaller form factor.

    Original – ROHM

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