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SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.
In addition to smaller die sizes, third generation SIC devices offer faster switching speeds and reduced losses.
The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39 mΩ: GCMS008C120S1-E1, GCMX008C120S1-E1, GCMS016C120S1-E1, GCMX016C120S1-E1, GCMS040C120S1-E1 and GCMX040C120S1-E1, with the GCMX040C120S1-E1 having a switching time as low as 67 ns. In addition to these six, two further modules – GCMS080C120S1-E1 and GCMX080C120S1-E1 – are available, each with an RDSon of 80 mΩ.
The COPACK MOSFETs with Schottky barrier diode provides exceptional switching losses at high junction temperature due to the low turn on switching losses.
SemiQ is targeting the robust SiC MOSFET modules at applications including solar inverters, energy storage systems, battery charging, and server power supplies. All devices have been screened with wafer-level gate-oxide burn-in tests and tested beyond 1400 V, with avalanche testing to 330 mJ (RDSon = 39 mΩ) or 800 mJ (RDSon = 16.5 or 8.4 mΩ).
In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to as low as 468 µJ and a reverse recovery charge of 172 nC (GCMX040C120S1-E1). The family also has a low junction-to-case thermal resistance and comes with an isolated backplate and the ability to directly mount to a heatsink by 4kVAC galvanic isolation testing.
Specifications: Ratings and electrical/thermal characteristics
The QSiC 1200 V MOSFET modules have a continuous operational and storage temperature of -55oC to 175oC. It has a recommended operational gate-source voltage of -4.5/18 V, with a VGSmax of -8/22 V, and a power dissipation of 183 to 536 W (RDSon = 39 and mΩ, core and junction temperature 25oC).
For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.23oC per watt (RDSon = 8.4) as well as a typical zero-gate voltage drain current of 100 nA, and a gate-source voltage current of 10 nA.
The fastest switching device has a turn-on delay time of 13 ns with a rise time of 7 ns; its turn-off delay time is 18 ns with a fall time of 29 ns.
Original – SemiQ
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WeEn Semiconductors will exhibit the company’s latest 600 V super junction MOSFET for computing and telecoms server applications at this year’s PCIM Expo conference and trade fair. The WSJ2M60R065DTL has been specifically developed to address the demands of artificial intelligence (AI) and other high-performance processing applications by enabling improved efficiency, smaller form factors and easier thermal management.
Based on the company’s latest generation super junction technology, the WeEn WSJ2M60R065DTL super junction MOSFET combines an industry-leading on resistance (RDS(ON)) and figure of merit (RDS(ON)*Qg) with an ultra-compact TOLL package. Visitors to PCIM in Nuremberg from 6th – 8th May 2025 will have the opportunity to see this advanced technology on the WeEn booth (Hall 9, booth 131), alongside other bipolar products including silicon-controlled rectifiers, power diodes, high voltage transistors and silicon carbide (SiC) devices.
The WSJ2M60R065DTL is rated for 50 A, features a maximum RDS(ON) of 65 mΩ and has a typical blocking voltage of around 700 V. An integrated and fine-tuned forward recovery diode (FRD) ensures excellent reverse recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/μs without damage, making the WSJ2M60R065DTL particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies where it can deliver high efficiency while handling irregular operating conditions. At the same time, stable resistance performance delivers a steady and predictable RDS(ON) across a range of current and temperature conditions.
In developing the new MOSFET, WeEn has focused on precise control of the charge balance of the super junction structure. This ensures robust avalanche ruggedness and low capacitive losses that allow for an optimized balance of RDS(ON) and EOSS As with all WeEn technologies, reliability is a prime consideration and the company conducts extensive and reliability checks. All of the company’s super junction MOSFETs demonstrate not only consistency among samples but good ESD capabilities and zero aging during reliability examinations.
Original – WeEn Semiconductors
