• Nexperia Releases GaN FETs in Proprietary Copper-Clip CCPAK Surface Mount Packaging

    Nexperia Releases GaN FETs in Proprietary Copper-Clip CCPAK Surface Mount Packaging

    3 Min Read

    Nexperia announced that its GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications.

    Building on two decades of expertise in supplying high-volume, high-quality copper-clip SMD packaging, Nexperia is now proud to extend its revolutionary packaging approach to GaN cascode switches in CCPAK. The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging.

    This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia’s commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom.

    Nexperia’s CCPAK surface mount packaging uses Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For maximum flexibility in designs, these CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.

    The cascode configuration of the GAN039-650NTB enables it to deliver superior switching and on-state performance, with a robust gate offering high margins against noise.  This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers.

    Nexperia’s GaN technology improves switching stability and helps to shrink die size by approximately 24%. In addition, device RDS(on) is reduced to only 33 mΩ (typ.) at 25°C, with  a high threshold voltage and low diode forward voltage.

    “Nexperia recognizes that designers of industrial and renewable energy equipment need a highly robust switching solution that can provide excellent thermal efficiency when performing power conversion.”, according to Carlos Castro, Vice President and General Manager of the GaN FET business at Nexperia. “This is why Nexperia decided to bring together the exceptional switching performance of its cascode GaN FETs with the exceptional thermal properties of its CCPAK packaging to offer customers a compelling solution.”

    Nexperia begins its CCPAK portfolio release with the top-cooled 33 mΩ (typ.), 650 V GAN039-650NTB, and will follow shortly with the bottom-cooled variant, GAN039-650NBB of the same RDS(on). More information including datasheets and samples is available at www.nexperia.com/ccpak.

    Original – Nexperia

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  • Infineon Hits the Dow Jones Sustainability™ World Index Once Again

    Infineon Hits the Dow Jones Sustainability™ World Index Once Again

    2 Min Read

    Infineon Technologies has once again been included in the Dow Jones Sustainability™ World Index, as announced by S&P Global last Friday in New York, USA.

    “We are proud that Infineon has been chosen as one of the world’s most sustainable companies for the 14 th consecutive year“, said Elke Reichart, Member of the Board and Chief Digital Transformation Officer, responsible for Sustainability at Infineon. “Moreover, we feel strongly encouraged to keep up our efforts at making further progress towards our ambitious sustainability goals. Therefore, we are continuously developing our processes and drive innovation within the company and beyond. The green and the digital transformation go hand in hand.”

    Infineon is well on track with the implementation of its CO 2-neutrality goal by 2030 (Scope 1 and 2). To date emissions have been reduced by 56.8 percent compared with the base year of 2019 while approximately doubling the business at the same time.

    As a leading manufacturer of semiconductors for power electronic systems and the IoT, Infineon makes a significant contribution to decarbonization on the way to a net-zero society. Infineon’s products and solutions help to save 34 times more CO 2 emissions over the course of their usage than were created during their production.

    This year, Infineon scored especially well in Privacy Protection and Innovation Management that includes aspects like Research & Development, Product Innovation and also Process Innovation, for instance through digitalization and the application of Industry 4.0 principles.

    The Dow Jones Sustainability Index is regarded as one of the most important benchmarks for sustainability and lists the world’s leading companies from 61 industries. The assessment is based on the companies’ economic, environmental and social performance. Its objective is to help investors make informed decisions on how to align their portfolios more clearly with sustainability aspects, and to encourage companies to actively continue their efforts in this regard.

    Original – Infineon Technologies

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