• McLaren Applied Introduced IPG5-x 800V SiC Inverter

    McLaren Applied Introduced IPG5-x 800V SiC Inverter

    3 Min Read

    McLaren Applied has launched IPG5-x, a highly flexible 800V Silicon Carbide (SiC) inverter that can be integrated into Electric Drive Units (EDUs). Targeting growing OEM demand for high-performing, integrated EDUs that save space and cost, the British engineering and technology pioneer has developed IPG5-x to work with a variety of motors and transmissions – especially in performance applications.

    IPG5-x is an adaptation of McLaren Applied’s current award-winning 800V SiC inverter, IPG5. IPG5-x will coexist alongside the standalone IPG5, with application depending on customer need. The ‘x’ suffix was chosen because IPG5-x is a product designed for collaboration with Tier 1 and OEM partners looking to bring EDU products to market quickly and cost effectively. McLaren Applied is in discussions with several OEMs and Tier 1 suppliers, and is working with transmission provider TREMEC to jointly develop an integrated EDU for their first customer vehicle application.

    “In our discussions with customers and partners, it’s become clear that OEMs are increasingly looking for the option to source integrated EDUs that save space, cost and speed up  development time,” commented Paolo Bargiacchi, Head of Product, Automotive at McLaren Applied. “We’ve developed the IPG5-x to be highly flexible, so it’s ready to be integrated within any combination of motor and transmission. It carries over all of our standalone IPG5’s qualities – peak efficiencies over 99%, continuously variable switching and fine motor control – building on the maturity of that product.”

    Derived from decades of innovation in top tier automotive and motorsports, McLaren Applied’s IPG5-x offers best-in-class fine motor control and high efficiency through continuously variable switching frequencies; maximising the advantages of SiC semiconductors. 

    The IPG5-x forms a step forward in what the automotive team at McLaren Applied describes as the ‘waves of electrification’. The first wave involved early pioneers of technology, the second wave is denoted by the breakthrough of EVs to the mainstream. The third wave is efficiency and will see inverter technology rapidly adopt SiC semiconductors, especially in 800V architectures, enabling vehicles to achieve longer range where efficient power electronics are key.

    Bargiacchi added: “The immediate focus must be on achieving greater drivetrain efficiency and cost reduction, which you can do through a product like IPG5-x. The competitive landscape is ramping up significantly now that all manufacturers have established their product entry points. 

    “Models based on dedicated 800V SiC architectures are leading the way, driving a virtuous cycle: an efficient drivetrain inherently has a smaller battery, which makes the vehicle cheaper, lighter and easier to control, and offers a smaller embedded and operating carbon footprint. It also increases range and speeds up charge times, building trust in the technology.”

    As competition increases, we will enter the fourth wave, where OEMs will need to differentiate the customer experience their products deliver. In anticipation of this change, McLaren Applied has developed advanced motor control software in both IPG5 and IPG5-x that enables a variety of features ranging from improved refinement through to a more engaging drive.

    Original – McLaren Applied

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  • Silicon Carbide Viper Module to Power Volvo

    Silicon Carbide Viper Module to Power Volvo

    2 Min Read

    STMicroelectronics will supply BorgWarner Inc. with the latest third generation 750V silicon carbide (SiC) power MOSFETs dice for their proprietary Viper-based power module. This power module is used in BorgWarner’s traction inverter platforms for several current and future Volvo Cars electric vehicles.

    “This collaboration will give Volvo Cars the opportunity to further increase the attractiveness of our electrical vehicles with longer range and faster charging. It will also support us on our journey towards being fully electric by 2030 and strengthen our increased vertical integration and our control of critical components,” says Javier Varela, Chief Operating Officer & Deputy CEO, Volvo Cars.

    BorgWarner is pleased to partner with ST to supply our longstanding customer Volvo Cars with inverters for their next generation of BEV platforms,” says Stefan Demmerle, Vice President of BorgWarner Inc. and President and General Manager, PowerDrive Systems.

    To fully leverage the performance of ST’s SiC MOSFET dice, BorgWarner collaborated closely with ST’s technical team to match their die with BorgWarner’s Viper power switch, thereby maximizing inverter performance and delivering a compact and cost-effective architecture. The collaboration between the companies provides the high-volume capability that is required by the quickly growing EV market.

    Our collaboration with BorgWarner, a leading global automotive supplier in electrification, will enable Volvo Cars to offer their customers superior vehicle performance and range,” says Marco Monti, President, Automotive and Discrete Group, STMicroelectronics. “We are committed to expanding SiC capacity and to reinforcing our SiC supply, including through vertical integration, as we ramp up volumes to support our global automotive and industrial customers in their shift to electrification and higher efficiency.

    ST’s high-volume STPOWER SiC products are manufactured in its fabs in Italy, and Singapore, with advanced packaging and testing at its back-end facilities in Morocco and China. In October 2022, ST announced it would expand its wide bandgap manufacturing capacity with a new integrated SiC substrate manufacturing facility in Catania, home to the company’s power semiconductor expertise and the site of integrated research, development, and manufacturing of SiC.

    Original – STMicroelectronics

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  • Toshiba Delivers 3rd Gen SiC MOSFETs

    Toshiba Delivers 3rd Gen SiC MOSFETs

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched silicon carbide (SiC) MOSFETs, the “TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

    The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%, compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.


    • Switching power supplies (servers, data centers, communications equipment, etc.)
    • EV charging stations
    • Photovoltaic inverters
    • Uninterruptible power supplies (UPS)


    • Four-pins TO-247-4L(X) package:
      Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive
    • 3rd generation SiC MOSFETs
    • Low drain-source On-resistance x gate-drain charge
    • Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)

    Original – Toshiba

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