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Toshiba Electronics Europe GmbH introduces technologically advanced solutions that enable engineers to meet their system efficiency and sustainability design goals at PCIM 2025. This year, Toshiba showcases semiconductor solutions in key application areas, including e-mobility, industrial, energy, and infrastructure.
“Excellence in power – over its 150-year history, this is what Toshiba stands for,” says Armin Derpmanns, VP Marketing & Operations, Toshiba. “Innovative technologies and solutions, highest quality levels, and low-carbon footprint products support engineers in enhancing performance, reliability, and sustainability to build an all-electric society.”
At Toshiba’s stand, three demonstration areas are set to focus on the latest innovation of wide-bandgap (WBG) technology, advances for the next generation of Silicon MOSFETs and Motor Control related applications.
Toshiba will share updates on its recent advancements in 6-inch diameter silicon carbide (SiC), as well as 8- and 12-inch silicon (Si) wafer production. Additionally, examples of new IGBT/FRD, RC-IGBT and SiC MOSFET dies will be introduced. In terms of modules, samples of a 2-in-1 SiC module with pin fin cooler will be displayed. Visitors to the stand will be able to examine a mock-up of the new 1200V/350A middle voltage multi-chip package (MV-MCP) with double-sided heat dissipation, designed for xEV traction inverter applications.
Additionally, visitors to the booth can explore how Toshiba’s SmartMCD, featuring an integrated microcontroller with a gate driver, contributes to a higher efficiency for automotive motor applications, offering space and system cost savings.
The industrial area will include a new cordless power tool demo, demonstrating how Toshiba’s three-phase brushless DC (BLDC) motor drive circuit enables compact yet highly efficient motor control.
The display also features the Click boards™ demonstrator. Toshiba’s specialists will be on hand to explain how evaluation and prototyping boards, developed in collaboration with its partner MIKROE, can simplify the design process for engineers working on automotive and industrial motor control applications. The latest addition to the family, Clicker 4 Inverter Shield 2 extension board, illustrates how it can enable the precise and reliable control of BLDC motors for electric power steering (EPS), powered brakes, and pumps.
The energy (WBG) sector of Toshiba’s stand spotlights high power intelligent flexible package low voltage (iXPLV), and E3D SiC MOSFET modules.
For xEV inverter designers, visitors should make a point to see Toshiba’s presentation, titled: ‘Impact of SBD embedding into SiC MOSFETs on dynamic behaviour at High Temperature’ taking place at the Bruessel 1 stage, on 6th May between 11:20 and 11:40. Shunsuke Asaba will share research findings indicating that recovery loss remains constant across temperatures and consistent turn-on loss is therefore anticipated in inverter circuits regardless of temperature.
For those interested in the latest Toshiba power electronics and semiconductor device modelling developments, Kazuyasu Takimoto will present a poster session in the foyer, entitled: ‘Accurate IGBT Circuit Model Considering Impact of Dynamic Avalanche Phenomenon’. It takes place during the Modelling and Simulations II session on May 8th, which runs from 11:15 to 12:45.
Original – Toshiba
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Toshiba Electronics Europe GmbH and Toshiba Materials CO., LTD. will bring solutions that support customers’ goals in reducing their CO2 footprint at the PCIM 2024 conference and exhibition (Nuremberg 11th – 13th June).
This year, the company will use the event to showcase a combination of several business units that support development of sustainable solutions. Semiconductor, battery, and fine ceramic material solutions form a complete chain of products in key applications from e-mobility, industrial, energy and infrastructure sectors.
Toshiba has manufactured top-class ceramics since the 1970s, and its pioneering Silicon Nitride substrates will be on display along with bearing balls, AMOBEADS™, and Nanocrystalline common mode choke cores.
In Toshiba’s eMobility booth area, visitors will discover demonstrations of automotive thermal management by heat pumps and fans utilising Toshiba’s newly released SmartMCD.
Toshiba’s industrial demonstrations highlight the entire product chain from control to isolation to power conversion stages, incorporating the latest generations of SiC, GaN and low-voltage MOSFET technologies. They include reference design implementations utilising modern topologies for factory automation, power supplies, and motor control applications.
Energy and infrastructure demonstrations will focus on high-power solutions such as IEGT and SiC Modules supporting voltages from 1.2kV to 3.3kV. Toshiba’s SiC Cube illustrates a solution implementation for charging infrastructure utilising SiC MOSFET devices, whereas SCiB batteries demonstrate their effective use for energy storage.
Toshiba representatives are also scheduled to participate in the conference program speeches and poster sessions on Wide Bandgap, power semiconductors and gate driver ICs topics.
Original – Toshiba
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Toshiba Electronics Europe GmbH has launched a pair of automotive grade 40V N-channel power MOSFETs based upon their latest U-MOS IX-H process. The new devices use a new S-TOGLTM (Small Transistor Outline Gull-wing Leads) package that offers a number of advantages in automotive applications.
Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power MOSFET with high current density is required due to the size constraints within automotive equipment.
The new XPJR6604PB and XPJ1R004PB have a VDSS rating of 40V and the XPJR6604PB is rated for a continuous drain current (ID) of 200A (XPJ1R004PB = 160A). Both devices are rated for pulsed current (IDP) at 3x this value, 600A and 480A respectively. The 200A rating is higher than that achieved by Toshiba’s 6.5mm × 9.5mm DPAK+ package.
The new XPJR6604PB and XPJ1R004PB automotive MOSFETs use Toshiba’s innovative new S-TOGLTM package that measures just 7.0mm × 8.44mm × 2.3mm. The products are post-less and feature a multi-pin structure for the source leads that significantly decreases package resistance.
Combining the S-TOGLTM package with Toshiba’s U-MOS IX-H process gives the XPJR6604PB an on-resistance (RDS(ON) Compared to this device, the mounting area has reduced by around 55% compared while retaining the channel-to-case thermal resistance characteristics (Zth(ch-c)) – XPJR6604PB = 0.4ºC/W and XPJ1R004PB = 0.67ºC/W.
Many automotive applications are based in severely harsh environments, so the reliability of surface mount solder joints is a critical consideration. Toshiba’s S-TOGLTM package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.
Suited to harsh temperature environments, the MOSFETs are AEC-Q101 qualified and capable of operating at channel temperatures (Tch) as high as 175ºC.
Toshiba offers matched shipments for the devices, in which the gate threshold voltage range does not exceed 0.4V for each reel. This facilitates designs with small characteristic variations for applications requiring parallel connectivity for high-current operation.
Original – Toshiba
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Toshiba Electronics Europe GmbH launched two products for brushless DC (BLDC) motor drive applications including fan motors, ventilation fan, air conditioners, air cleaners, and pumps.
Each of the intelligent power devices (IPD) incorporate 600V-rated IGBTs and a matched gate driver as a one-chip solution in a single compact package. The output DC current (IOUT) rating of the TPD4163F is 1A while the TPD4164F is rated at 2A.
The two devices (TPD4163F and TPD4164F) have an IGBT saturation voltage (VCEsat) of 2.6V and 3.0V respectively, while the Diode forward voltage (VF) is 2.0V and 2.5V.
Both devices are housed in a miniature surface mount HSSOP31 package. With dimensions of just 17.5mm x 11.93mm x 2.2mm, the PCB footprint is reduced by around 63% when compared with Toshiba’s existing DIP26 package products. This makes a significant contribution to reducing the space required for motor drive circuit boards.
In addition, in geographic regions where the power supply is unstable, the supply voltage may fluctuate significantly. Therefore, to improve reliability, the supply voltage rating (VBB)has been increased from 500V to 600V to introduce more design margin.
To support the new devices, Toshiba has developed a reference design for BLDC sensorless brushless DC motor drive utilizing the new TPD4164F and a microcontroller TMPM374FWUG.
Toshiba will continue to expand their product lineup with various packages and improved characteristics, contributing to customers’ design flexibility and carbon neutrality through energy-saving motor control.
Volume production shipments of both new devices (and the reference design board) start today.
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