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The rapid growth of power-hungry applications across various industries is placing unprecedented demands on power electronics in terms of power density, efficiency and reliability. Discrete power MOSFETs play a pivotal role in that context. An application-optimized approach opens new possibilities to further improve already highly advanced MOSFET technologies.
Leveraging this use-case centric approach, Infineon Technologies AG has launched the OptiMOS™ 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Designed to provide the best fitting solution in their respective use case, the new OptiMOS 7 family offers products specifically for high performance switching, motor-drives, or RDS(ON)-focused applications.
OptiMOS 7 25 V: Optimized for Switching Applications
The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies (SMPS) in telecommunications and traditional server applications. The portfolio includes two technology variants: devices optimized for hard-switching and soft-switching topologies. The hard-switching optimized devices feature an excellent Miller ratio, FOMs, and RDS(ON)10, while the soft-switching optimized products deliver ultra-low RDS(ON)45 and FOMQg. Compared to the OptiMOS™ 5 25 V, the new generation achieves up to 20 percent lower RDS(ON) and up to 25 percent better FOMs, depending on the optimization type.
OptiMOS 7 40 V: Optimized for Motor Drives
The OptiMOS 7 40 V MOSFETs, designed for motor-drive applications, deliver lower RDS(on), optimized gate characteristics, enhanced noise immunity, and a threefold wider safe operating area (SOA) compared to the previous generation. Their lower transconductance improves current distribution, reducing voltage overshoot, and boosts performance under harsh operating conditions. These devices are ideal for motor drives, power tools, and gardening applications, offering maximum reliability, efficiency, and power density.
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With the increasing electrification of vehicles worldwide, the demand for highly efficient, compact, and reliable power systems continues to grow – not only in passenger cars but also in electric two-wheelers. These vehicles require special systems, such as HVLV DC/DC converters at xEVs and traction inverters at electric two-wheelers, which must meet high-quality standards while also fulfilling considerable technical, commercial, and manufacturing challenges.
To address these demands, Infineon Technologies AG has expanded its OptiMOS™ 6 portfolio by introducing the Automotive 150 V MOSFET family. These new devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT.
The new automotive MOSFET family, based on Infineon’s 6th generation OptiMOS technology, offers two different drain-source resistance levels across all device variants. All variants are rated for the 150 V voltage class and deliver the lowest RDS(on) available in this class, reaching as low as 2.5 mΩ. This enables minimal conduction losses and excellent efficiency.The tight distribution of the gate threshold voltage (VGS(th)) supports optimal synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC/DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4 K/W. This significantly improves heat dissipation, reduces system-level cooling requirements, and lowers associated expenses.
Each of the three package types offers specific advantages: the TO-Leadless (TOLL) 10×12 mm² enables a compact design. The 10×12 mm² TOLG package is footprint-compatible with TOLL, with the additional feature of gullwing leads for high robustness against thermal-mechanical stress. Meanwhile, the 10×15 mm² TOLT package features a top-side cooling concept that enables efficient heat dissipation on system level, making it well-suited for thermally demanding applications in space-constrained environments.Moreover, Infineon’s OptiMOS 6 150 V MOSFETs are qualified to the highest standards of Infineon Automotive Quality and exceed the requirements of the AEC-Q101 standard. In addition, they are PPAP-capable, making it easy to meet the highest automotive production standards. Together, these capabilities allow engineers to optimize system designs for specific performance needs and budget constraints.
The OptiMOS 6 Automotive 150 V MOSFET family in TOLL, TOLG, and TOLT is available now. Further information is available at infineon.com/150VMOS.
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Reflex Drive, a deep tech startup from India has selected power devices from Infineon Technologies AG for its next-generation motor control solutions for unmanned aerial vehicles (UAVs). By integrating Infineon’s OptiMOS™ 80 V and 100 V , Reflex Drive’s electric speed controllers (ESCs) achieve improved thermal management and higher efficiency, enabling high power density in a compact footprint.
Additionally, the use of Infineon’s MOTIX™ IMD701 controller solution – which combines the XMC1404 microcontroller with the MOTIX 6EDL7141 3-phase gate driver IC – delivers compact, precise, and reliable motor control. This enables improved performance, greater reliability, and longer flight times for UAVs.
“Our partnership with Reflex Drive is an important contribution to our market launch strategy and presence in India,” says Nenad Belancic, Global Application Manager Robotics and Drones at Infineon. “Our partner has proven its expertise with numerous customers who have obtained aviation certifications. In addition, the company has presented its innovative technologies enabled by Infineon systems at important international industry events.”
“Our collaboration with Infineon has led to significant advances in UAV electronics,” says Amrit Singh, Founder of Reflex Drive. “We believe drones have the potential to transform industries, from agriculture to logistics, and with Infineon’s devices, we can help drive this transformation at the forefront.”
Reflex Drives’s ESCs with field-oriented control (FOC) offer improved motor efficiency and precise control, while its high-performance BLDC motors are designed for optimized flight control and enable predictive maintenance of drive systems. Weighing only 180 g and with a compact volume of 120 cm³, the ESCs can deliver continuous power output of 3.8 kW (12S/48 V, 80 A continuous).
Due to their lightweight design, robust power output, and consistent FOC control – even under demanding weather conditions – make them ideal for motors in the thrust range from 15 to 20 kg. Therefore, they are particularly suitable for drone applications in the fields of agricultural spraying technology, seed dispersal, small-scale logistics, and goods transport.
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Infineon Technologies AG launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance compute. Through enhanced system performance and with Infineon’s trademark robustness, the new OptiMOS™ TDM2454xx quad-phase power modules enable best-in-class power density and total-cost-of-ownership (TCO) for AI data centers operators.
The OptiMOS TDM2454xx quad-phase power modules enable true vertical power delivery (VPD) and offer industry’s best current density of 2 Ampere per mm². The modules follow the OptiMOS TDM2254xD and the OptiMOS TDM2354xD dual-phase power modules introduced by Infineon last year, and continue to enable superior power density for accelerated compute platforms.
In traditional horizontal power delivery systems, power needs to travel across the surface of the semiconductor wafer, which can result in higher resistance and significant power loss. Vertical power delivery minimizes the distance that power needs to travel, thereby reducing resistive losses enabling increased system performance.
Data centers are currently responsible for two percent of global energy consumption according to the IEA. Fueled by AI, the power demands within data centers are expected to grow by 165% between 2023 and 2030. Continually improving the efficiency and power densities of power conversion from grid-to-core is vital to enable further advancements in compute performance while reducing TCO.
“We are proud to expand our high-performance AI data center solutions with the OptiMOS TDM2454xx VPD modules,” said Rakesh Renganathan, Vice President Power ICs at Infineon Technologies. “We take a three-dimensional design approach and leverage our industry-leading power devices, packaging technologies and extensive systems expertise to provide high-performance and energy-efficient computing solutions as part of our mission to drive digitalization and decarbonization.”
The OptiMOS TDM2454xx modules are a fusion of Infineon’s robust OptiMOS 6 trench technology, chip-embedded package for superior electrical and thermal efficiencies, and innovative low-profile magnetic design that continue to push the envelope for performance and quality of VPD systems.
Additionally, the OptiMOS TDM2454xx has a footprint that is designed to enable module tiling and improving current flow that enhance electrical, thermal and mechanical performance. The OptiMOS TDM2454xx modules support up to 280A across four phases with an integrated embedded capacitor layer within a small 10x9mm² form factor. Combined with Infineon’s XDP™ controllers, they offer a robust power solution with improved system power density.
The OptiMOS TDM2454xx modules are further strengthening Infineon’s unique position in the market with the broadest product and technology portfolio based on all relevant semiconductor materials to power different AI server configurations from grid to core in the most energy efficient way.
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The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R DS(on). Infineon Technologies AG addresses this challenge with the new OptiMOS™ 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET.
The device prevents damage to the load by limiting the high inrush current and ensures minimal losses during operation due to its low R DS(on). Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio.
The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R DS(on). The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. During such events the current distribution between parallel MOSFETs is critical for the system design and reliability.
The OptiMOS 5 Linear FET 2 features an optimized transfer characteristic that allows for improved current sharing. Taking into account the wide SOA and improved current sharing, the number of components can be reduced by up to 60 percent in designs where the number of components is determined by the short-circuit current requirement. This enables high power density, efficiency, and reliability for battery protection which are used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery back-up units and battery-powered vehicles.
The new OptiMOS 5 Linear FET 2 MOSFET is now available. Further information can be found at www.infineon.com/optimos-linearfet and www.infineon.com/ipt023n10nm5lf2.
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Infineon Technologies AG expands its OptiMOS™ 6 MOSFET portfolio with the new 135 V and 150 V product families. The devices are designed to meet the requirements of drives and switched-mode power supply (SMPS) applications and complement the recently released launched OptiMOS 6 120 V MOSFETs.
With the extended portfolio, Infineon offers its customers a wide range of alternatives to select the best-fit MOSFETs for various applications. Lower switching losses benefit applications like server SMPS, solar optimizers, high-power USB chargers, and telecom. Improved conduction losses are highly beneficial for motor inverters in e-forklifts and light electric vehicles (LEVs).
Compared to the previous generation (OptiMOS 5 150 V MOSFETs), the new product families offer a reduction in on-state resistance R DS(on) of up to 50 percent, while the FOM g is reduced by 20%. With the very low R DS(on), their improved switching performance and excellent EMI behavior, both new families deliver unparalleled efficiency, power density, and reliability. A faster and softer body diode delivers an up to 59 percent lower Q rr, less overshoot and ringing.
The OptiMOS 6 135 V and 150 V MOSFETs are available in a variety of packages to provide customers with a range of options for best-fit products. This broad package portfolio includes TO-220, D 2PAK 3-pin, D 2PAK 7-pin, TOLL, TOLG, TOLT, SuperSO8 5×6 and PQFN 3.3×3.3.
The OptiMOS 6 135 V and 150 V MOSFETs can be ordered now. Further information is available at www.infineon.com/optimos-6-135v and www.infineon.com/optimos-6-150v.
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Infineon Technologies AG is expanding its portfolio of next-generation OptiMOS™ 7 MOSFETs for automotive applications: the portfolio of 40 V products now includes additional devices in robust, lead-free packages. In addition, 80 V and 100 V OptiMOS 7 MOSFETs are now also available.
The MOSFETs are optimized for all standard and future automotive 48 V applications, including electric power steering, braking systems, power switches in new zone architectures, battery management, e-fuse boxes, DC/DC, and BLDC drives in various 12 V and 48 V electrical system applications. They are also suitable for other transportation applications such as light electric vehicles (LEV), e2wheelers, eScooters, eMotorcycles, and commercial and agricultural vehicles (CAV).
“As a technology leader in power semiconductors, Infineon is committed to shape the future technology standards in automotive power MOSFETs in terms of power efficiency, innovative and robust power packaging with high quality,” said Axel Hahn, Senior Vice President and General Manager Automotive LV MOSFETs of Infineon. “We are providing our customers a diverse product portfolio and are addressing all their requirements to drive the development of modern automotive applications.”
By combining 300 mm thin-wafer technology and innovative packaging, the new OptiMOS 7 technology enables significant performance advantages in all available voltage classes. As a result, the components are now available in various rugged automotive power packages, including Single SSO8 (5×6), Dual SSO8 (5×6), mTOLG (8×8) and sTOLL (7×8).
The family offers high power density and energy efficiency with the industry’s lowest on-state resistance (e.g. 1.3 mΩ max in a single SSO8 (5×6) 80V package) in the smallest form factor. The devices also offer reduced switching losses, improved Safe Operating Area (SOA) robustness and high avalanche current capability. With this, they enable a highly efficient system design for tomorrow’s automotive applications.
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Infineon Technologies AG introduced the SSO10T TSC package with OptiMOS™ MOSFET technology. With its direct top-side cooling concept, the package offers excellent thermal performance. This eliminates heat transfer into or through the PCB of the automotive electronic control unit.
The package enables a simple and compact double-sided PCB design and minimizes cooling requirements and system costs for future automotive power designs. The SSO10T TSC is therefore well suited for applications such as electric power steering (EPS), EMB, power distribution, brushless DC drives (BLDC), safety switches, reverse battery, and DCDC converters.
The SSO10T TSC has a 5 x 7 mm² footprint and is based on the established industry standard SSO8, a 5 x 6 mm² robust housing. However, due to its top-side cooling, the SSO10 TSC offers more than 20 percent and up to 50 percent higher performance than the standard SSO8 – depending on the thermal interface (TIM) material used and the TIM thickness. The SSO10T TSC package is JEDEC listed for open market and provides wide second source compatibility. As a result, the package can be introduced quickly and easily as the future standard for top-side cooling.
The SSO10T package enables a very compact PCB design and reduces the system footprint. It also lowers the cost of the cooling design by eliminating vias, resulting in lower overall system costs and design effort. At the same time, the housing offers high power density and efficiency, thus supporting the development of future-proof and sustainable vehicles.
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Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts.
The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others.
Additionally, the combination of a wide safe operating area (SOA) and industry-leading R DS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.
The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3.
Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
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Artificial Intelligence is currently driving an exponential increase in global data generation, and consequently increasing the energy demands of the chips supporting this data growth. Infineon Technologies AG launched its TDM2254xD series dual-phase power modules that enable best-in-class power density, quality and total cost of ownership (TCO) for AI data centers.
The TDM2254xD series products blend innovation in robust OptiMOS TM MOSFET technology with novel packaging and proprietary magnetic structure to deliver industry-leading electrical and thermal performance with robust mechanical design. This lets data centers operate at higher efficiency to meet the high power demands of AI GPU (Graphic Processor Unit) platforms while also significantly reducing TCO.
Given that AI servers require 3 times more energy than traditional servers, and data centers already consume more than 2 percent of the global energy supply, it is essential to find innovative power solutions and architecture designs that further drive decarbonization. Paving the way for the green AI factory, Infineon’s TDM2254xD dual-phase power modules combine with XDP TM Controller technology to enable efficient voltage regulation for high-performance computing platforms with superior electrical, thermal and mechanical operation.
Infineon introduced the TDM2254xD series at the Applied Power Electronics Conference (APEC). The modules’ unique design allows for efficient heat transfer from the power stage on to the heat sink through novel inductor design that is optimized to transfer current and heat, thereby allowing for a 2 percent higher efficiency than industry average modules at full load. Improving power efficiency at the core of a GPU yields significant energy savings at scale. This translates into megawatts saved for data centers computing generative AI and in turn leads to reduced CO 2 emissions and millions of dollars in operating cost savings over the system’s lifetime.
“This unique Product-to-System solution combined with our cutting-edge manufacturing lets Infineon deliver solutions with differentiated performance and quality at scale, thereby significantly reducing total cost of ownership for our customers,” said Athar Zaidi, Senior Vice President, Power & Sensor Systems at Infineon Technologies. “We are excited to bring this solution to market; it will accelerate computing performance and will further drive our mission of digitalization and decarbonization.”
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