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Swissbit AG and Nexperia have announced a collaboration focused on enabling secure, high-reliability hardware platforms for AI accelerators, cloud computing, hyperscale data centers, enterprise servers, and edge computing systems. The partnership combines Swissbit’s expertise in secure storage and embedded memory with Nexperia’s portfolio of semiconductor building blocks to support next-generation computing infrastructure.
As AI workloads and cloud services continue to grow, system designers face increasing demands for higher performance, improved energy efficiency, stronger security, and long-term system reliability. The collaboration focuses on delivering hardware solutions that meet these requirements while emphasizing quality, transparency, and long product lifecycles.
Swissbit contributes:
- Secure storage solutions
- Embedded memory products
- Data security expertise
- Long lifecycle support
- Predictable product availability
Nexperia complements these capabilities with a broad range of semiconductor components designed for reliable, long-term operation across industrial and computing applications.
Nexperia components already incorporated into Swissbit platforms include:
- Ultra-low-capacitance ESD and surge protection devices for high-speed interfaces such as DDR and PCIe
- MOSFETs and small-signal transistors for efficient power delivery
- Level shifters
- Bus switches
- Interface protection and signal integrity components
These devices help improve system robustness, energy efficiency, and long-term reliability in data-centric infrastructure.
The collaboration supports a wide range of applications, including:
- AI accelerators
- Cloud computing infrastructure
- Hyperscale data centers
- Enterprise servers
- Edge servers
- Industrial automation
- Embedded systems
- Data-centric computing platforms
Original – Nexperia
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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the SIC1065G5M-BP, a 650 V, 10 A silicon carbide (SiC) Schottky Barrier Diode (SBD) designed for high-efficiency power conversion applications. Utilizing advanced Merged PiN Schottky (MPS) technology, the device combines zero reverse recovery, low forward voltage, and high-temperature operation to reduce switching losses and improve system efficiency in industrial and energy applications.
As switching frequencies continue to increase in modern power converters, conventional silicon rectifiers become a significant source of switching losses. The SIC1065G5M-BP addresses this challenge by eliminating reverse recovery current, enabling cleaner, more efficient operation in high-frequency power conversion systems.
The device is particularly well suited for applications where efficiency, thermal performance, and reliability are critical.
The diode is built using Merged PiN Schottky (MPS) technology, combining the low-loss characteristics of a Schottky diode with improved surge current capability.
Key electrical features include:
- 650 V reverse voltage rating
- 10 A average forward current
- Maximum forward voltage of 1.7 V
- Zero reverse recovery current
- 60 A non-repetitive surge current capability
The absence of reverse recovery charge significantly reduces switching losses, making the device suitable for high-frequency converter topologies.
The SIC1065G5M-BP supports junction temperatures of up to 175°C, enabling reliable operation in thermally demanding environments while simplifying cooling system design.
Packaged in the industry-standard TO-220AC package, the device provides straightforward heatsink attachment and effective thermal management for higher-power applications.
The new SiC Schottky Barrier Diode is designed for a range of high-efficiency power conversion systems, including:
- Solar inverters
- Power factor correction (PFC) circuits
- Motor drives
- EV charging infrastructure
- Industrial power supplies
Original – Micro Commercial Components
