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Infineon Technologies AG provides CoolGaN™ power transistors to Universal Microelectronics Co., Ltd. (UMEC) for the company’s new 250 W adapter for networking Power over Ethernet (PoE) applications. Infineon´s CoolGaN transistors enable reliable, high-performance solutions and help UMEC develop safer and energy-efficient technology to address modern power system challenges. These solutions are ideal for power electronics across various industries, including telecommunications, industrial electronics, medical technology, and consumer electronics.
GaN-based power devices provide higher efficiency, reducing heat generation and energy consumption. They can operate at higher frequencies and power densities, enabling more compact designs, maximizing rack space utilization, and improving cooling in AI data centers, for example. Furthermore, reducing system size allows for more hardware content and improved air flow, which results in less wasted heat and ultimately decreases operational costs and the overall carbon footprint.
“We are excited to see our CoolGaN technology powering UMEC’s new 250 W adapter for networking applications. This collaboration demonstrates the potential of GaN to revolutionize the data center industry, enabling smaller, more efficient, and reliable power solutions,” says Johannes Schoiswohl, Head of GaN Business Line at Infineon.
“Partnering with Infineon and utilizing their CoolGaN power transistors in our new 250 W adapter has allowed us to create a product that delivers exceptional efficiency and reliability,” says Richard Lin, Power Supply Product Manager at Universal Microelectronics. “This innovation aligns with our commitment to developing cutting-edge electronic solutions that meet the evolving demands of the networking industry.”
UMEC’s 250 W adapter offers excellent efficiency of 95 percent, a power density increase of around 39 percent. The CoolGaN transistors reduce power losses, enable switching at frequencies above 200 kHz, and improve thermal behavior, which is critical for compact and high-density power supplies. These are critical performance improvements in the global virtual networking market, which is expected to grow from $48.6 billion in 2024 to approximately $200 billion by 2030, at a CAGR of 26.5 percent.
Infineon’s gallium nitride power transistors are driving digitalization and decarbonization, while enabling high-frequency operation, increasing efficiency, and reducing system size in a wide range of applications. They are available in voltage classes from 60 V to 700 V and in a broad variety of packages.Original – Infineon Technologies
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Littelfuse, Inc. announced the release of the IX3407B, a single-channel, galvanically isolated gate driver designed to deliver high-speed switching performance and simplified system design in high-voltage power applications.
The IX3407B gate driver delivers up to 7 A peak source and sink output current through separate output pins and integrates Littelfuse’s proprietary 2.5 kV capacitive isolation technology for robust signal integrity and safety. It provides fast propagation delays, high Common Mode Transient Immunity (CMTI), and enhanced thermal stability, enabling efficient and reliable operation across a wide range of switching frequencies and temperatures.
“With the IX3407B, our customers can design safer, more compact, and more efficient power systems,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “The IX3407B will help companies accelerate their time to market while reducing total system cost in the growing markets of solar inverters, motor drives, industrial automation, and high-efficiency UPS systems.”
The IX3407B addresses the challenge of interfacing low-voltage logic with high-voltage power devices by providing galvanic isolation between control and driver stages without the need for bulky optocouplers or transformer-based isolation. This integration reduces board space, component count, and system complexity—while offering greater design flexibility and long-term reliability.
Key Features and Benefits
- 7 A typical peak source/sink current with separate output pins for precise gate control
- 2.5 kVrms capacitive isolation ensures robust electrical separation and fast signal transmission
- TTL/CMOS logic compatibility (3.3 V thresholds) with input voltage tolerance up to VCC
- Active Shutdown (ASD) and Under Voltage Lockout (UVLO) safeguard against fault conditions
- High CMTI rating of 150 kV/µs supports high-noise industrial environments
- Wide output supply range (13 V to 35 V) for flexibility across Si / SiC MOSFETs and IGBTs
Target Applications
The IX3407B is ideal for a wide range of industrial and renewable energy applications, including:
- AC and brushless DC motor drives
- Solar inverters and energy storage systems
- High-voltage DC/DC converters
- LLC and totem-pole PFC power stages
- Induction heating systems, welders, and uninterruptible power supplies (UPS)
- Building and factory automation systems
By replacing traditional optocoupler-based solutions, the IX3407B delivers superior performance, smaller footprint, and lower system cost, making it a compelling choice for engineers designing the next generation of high-efficiency power systems.
Original – Littelfuse
