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Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Mitsubishi Electric’s 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters.Furthermore, Mitsubishi Electric’s proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.
Original – Mitsubishi Electric
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EPC Space announced that both its Andover, Massachusetts facility and its wafer fabrication facility in Taiwan have been certified under the JANS MIL-PRF-19500 standard.
This certification marks a significant milestone, highlighting EPC Space’s commitment to excellence and its role as a leader in providing top-tier semiconductor solutions for critical space applications. The MIL-PRF-19500 certification, managed by the U.S. Department of Defense, sets the bar for reliability, performance, and environmental resilience in semiconductor components. EPC Space’s achievement in obtaining this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) is a world first.
Bel Lazar, CEO of EPC Space, commented, “Securing the JANS certification is a direct result of our relentless pursuit of quality. Our teams have worked tirelessly to ensure our products not only meet but exceed the expectations for reliability in the most demanding conditions.”
Alex Lidow, CEO of EPC Corporation, commented, “that the commitment to the MIL-PRF-19500 standard not only guarantees the durability and performance of EPC Space’s products but also reinforces the company’s dedication to supporting its customers in achieving their critical objectives.”
Looking ahead, EPC Space is set to launch 18 JANS certified Rad Hard GaN HEMT parts, ranging from 40V to 300V, throughout 2025. This expansion will further solidify EPC Space’s role as a key supplier of high-reliability electronics, crucial for space missions and other high-stakes applications.
Original – EPC Space
