• Bodo's WBG Expert Talk

    Bodo’s WBG Expert Talk

    1 Min Read

    Talk to the experts during Bodo Arlt’s virtual roundtable, focused on wide bandgap technology. Its goal is to keep the dialog going on, independent of any events that are hosted on fixed dates. These expert talks will build on the articles published in Bodo’s Power Systems magazine, giving you the chance to ask questions to the experts out of the industry.

    If you are interested in participating as an expert, please plan your article for the magazine. Bodo’s team will then invite you to one of the upcoming rounds. The aim is to give as many companies as possible this opportunity, since a wide variety of contributions is of value to everyone. Different speakers will bring new perspectives and approaches.

    Bodo’s next session will take place on July 26th.
    SiC discussion is planned from 3:00 to 4:00 pm and GaN from 4:30 to 5:30 pm CEST

    Original – Bodo’s Power Systems

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  • Getting the Best Performance Out of SiC with Proper Gate Drive Solutions

    Getting Best Performance Out of SiC with Proper Gate Drive Solutions

    2 Min Read

    Silicon Carbide allows for more efficient, smaller, and more capable power conversion systems but getting the most out of these wide-bandgap devices requires intentional selection of everything around the switch. One of the most important parts of the system is the gate driver. The gate drive solution directly impacts the switching efficiency of the SiC MOSFET as well as can have features to make systems more reliable like Miller Clamp and Short Circuit Protection.

    From the protection features available on the market today, to the robustness of isolated gate driver solutions, this training will teach about the intricacies of Silicon Carbide needs in gate drivers, the variety of gate drivers available, and the benefits of the various features that gate drivers can provide to the system designer.

    During this webinar you will learn:

    • Benefits of Silicon Carbide devices in power systems
    • Why we need gate drivers for power MOSFETs
    • Particulars of driving SiC MOSFETs
    • Common Mode Transient Immunity
    • Sizing the gate driver power supply and how to implement it
    • Why certain gate drive voltages are recommended and application considerations
      • Benefits of additional gate driver features for system design
      • Miller Clamping
      • Short Circuit Protection
      • Fault Reporting
    • Which gate drivers should be considered depending on the application, including the offering from Analog Devices
    • Resources available to design in Silicon Carbide and SiC Gate Drivers

    • Date: Wednesday, July 26, 2023
    • Time: 9:00 am EDT | 15:00 CET
    • Duration: 1 hour

    Original – Arrow

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  • Latest Advances in SiC and GaN Power Electronics Ecosystem

    Latest Advances in SiC and GaN Power Electronics Ecosystem

    1 Min Read

    PowerAmerica invites you to our annual Summer Workshop, August 8-10, 2023, on NC State’s Centennial Campus in Raleigh, NC. Expect great networking and presentations on the latest in the business and technology of silicon carbide and gallium nitride power semiconductors and applications.

     The workshop includes:

    • Keynote remarks by industry leaders
    • WBG Tutorials by leading practitioners
    • Reports on 10 SiC and GaN PowerAmerica member-funded projects
    • Update on SiC and GaN market trends
    • Roadmapping future PowerAmerica initiatives
    • Commercialization Success Stories
    • Ample networking opportunities

    Find the agenda and register for the event at PowerAmerica website.

    Original – PowerAmerica

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