-
At PCIM Europe 2025 in Nuremberg, Infineon Technologies AG will showcase its latest semiconductor, software and tooling solutions that help to solve today’s green and digital transformation challenges. At booth #470 in hall 7, the company will present highlights from its extensive power device portfolio, covering all relevant power technologies spanning silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Under the motto “Driving decarbonization and digitalization. Together”, Infineon will offer numerous demonstrations and presentations as well as the opportunity to talk to its experts.
Infineon’s PCIM 2025 demonstration highlights will include solutions in the following areas:
- Silicon and Wide Bandgap (WBG) at its best: At PCIM, Infineon will showcase its latest package and product developments across Si, SiC and GaN for applications such as AI data center power supplies, robotics, solar systems, and on-board chargers. Highlights include the new CoolSiC™ JFET technology, which offers outstanding levels of efficiency, system integration, and robustness for solid-state power distribution applications. Further solutions on display will include the CoolSET™ system in package, various innovative solutions in CoolGaN™ transistor technology and the proven CoolMOS™ 8 and OptiMOS™ 8 in silicon.
- Sustainable mobility, with zero-emission electromobility: Infineon’s power solutions accelerate the transition to e-mobility by enabling efficient traction inverters, on-board chargers, DC-DC converters and battery management systems. At PCIM, the company will showcase its AURIX™ Kit for xEV power conversion, a versatile platform for the development of digitally controlled DC-DC converters with different topologies and control methods. In addition, Infineon will present new WBG innovations for on-board chargers and DC-DC converters that offer enhanced performance and design flexibility.
- Green, intelligent buildings and smarter living: Residential energy systems such as photovoltaic panels and heat pumps, together with smart, energy-efficient electronic devices and EV chargers, are key to reducing the carbon footprint in the home. Semiconductors play a vital role in enhancing energy efficiency and enabling smart, connected buildings. At PCIM, Infineon will showcase SiC- and GaN-based technologies that offer high energy efficiency and reliability for energy generation and consumption. On display will be full system solutions for solar inverters, as well as demos for power optimization and heat pump boosting.
- Powering AI – from grid to core: The exponential data growth driven by digitalization and AI is increasing the energy demand of data centers. At PCIM, Infineon will show how its solutions, extending from the grid to the core, leverage Si, SiC, and GaN technologies to maximize the efficiency, power density and reliability of AI infrastructure. The portfolio includes top-of-rack switches, power supplies and battery backup units. A power system reliability modeling solution enables real-time health monitoring for data centers, helping to reduce outages and total cost of ownership.
Infineon will also contribute to the PCIM conference program and the various expo stages. An overview of all contributions by Infineon experts is available at www.infineon/pcim.
Visitors who are unable to attend the live show can register for Infineon’s digital event platform.
Original – Infineon Technologies
-
Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centers, EVs, motor drives, and industrial applications at PCIM 2025 (6th – 8th May, 2025).
PCIM is the leading exhibition for power electronics, intelligent motion, renewable energy, and energy management. Visitors are invited to visit the “Planet Navitas” booth (Hall 9, Booth #544) to learn about Navitas’ mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors.
Major technology and system breakthroughs include:
- The world’s first production-released 650 V bi-directional GaNFast ICs and IsoFast, high-speed isolated gate-drivers. This creates a paradigm shift in power by enabling the transition from two-stage to single-stage topologies. Targeted applications range widely across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage, and motor drives. The recorded launch event video can be viewed here.
- Automotive-qualification high-power GaNSafe™ ICs, which have been qualified to both Q100 and Q101, unlocking unprecedented power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications. A comprehensive reliability report has been created that analyzes over 7 years of production and field data and demonstrates GaN’s technology track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready.
- The latest release of the SiCPAK power modules, which utilize advanced epoxy-resin potting technology and GeneSiC™ trench-assisted planar technology, to enable 5x lower thermal resistance shift for extended system lifetime. Rigorously designed and validated for the most demanding high-power environments, they prioritize reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
- Newly released GaNSense™ Motor Drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhance performance and robustness beyond what is achievable by any discrete GaN or discrete silicon devices.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed up the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
Original – Navitas Semiconductor
-
Toshiba Electronics Europe GmbH introduces technologically advanced solutions that enable engineers to meet their system efficiency and sustainability design goals at PCIM 2025. This year, Toshiba showcases semiconductor solutions in key application areas, including e-mobility, industrial, energy, and infrastructure.
“Excellence in power – over its 150-year history, this is what Toshiba stands for,” says Armin Derpmanns, VP Marketing & Operations, Toshiba. “Innovative technologies and solutions, highest quality levels, and low-carbon footprint products support engineers in enhancing performance, reliability, and sustainability to build an all-electric society.”
At Toshiba’s stand, three demonstration areas are set to focus on the latest innovation of wide-bandgap (WBG) technology, advances for the next generation of Silicon MOSFETs and Motor Control related applications.
Toshiba will share updates on its recent advancements in 6-inch diameter silicon carbide (SiC), as well as 8- and 12-inch silicon (Si) wafer production. Additionally, examples of new IGBT/FRD, RC-IGBT and SiC MOSFET dies will be introduced. In terms of modules, samples of a 2-in-1 SiC module with pin fin cooler will be displayed. Visitors to the stand will be able to examine a mock-up of the new 1200V/350A middle voltage multi-chip package (MV-MCP) with double-sided heat dissipation, designed for xEV traction inverter applications.
Additionally, visitors to the booth can explore how Toshiba’s SmartMCD, featuring an integrated microcontroller with a gate driver, contributes to a higher efficiency for automotive motor applications, offering space and system cost savings.
The industrial area will include a new cordless power tool demo, demonstrating how Toshiba’s three-phase brushless DC (BLDC) motor drive circuit enables compact yet highly efficient motor control.
The display also features the Click boards™ demonstrator. Toshiba’s specialists will be on hand to explain how evaluation and prototyping boards, developed in collaboration with its partner MIKROE, can simplify the design process for engineers working on automotive and industrial motor control applications. The latest addition to the family, Clicker 4 Inverter Shield 2 extension board, illustrates how it can enable the precise and reliable control of BLDC motors for electric power steering (EPS), powered brakes, and pumps.
The energy (WBG) sector of Toshiba’s stand spotlights high power intelligent flexible package low voltage (iXPLV), and E3D SiC MOSFET modules.
For xEV inverter designers, visitors should make a point to see Toshiba’s presentation, titled: ‘Impact of SBD embedding into SiC MOSFETs on dynamic behaviour at High Temperature’ taking place at the Bruessel 1 stage, on 6th May between 11:20 and 11:40. Shunsuke Asaba will share research findings indicating that recovery loss remains constant across temperatures and consistent turn-on loss is therefore anticipated in inverter circuits regardless of temperature.
For those interested in the latest Toshiba power electronics and semiconductor device modelling developments, Kazuyasu Takimoto will present a poster session in the foyer, entitled: ‘Accurate IGBT Circuit Model Considering Impact of Dynamic Avalanche Phenomenon’. It takes place during the Modelling and Simulations II session on May 8th, which runs from 11:15 to 12:45.
Original – Toshiba
-
Cambridge GaN Devices (CGD) will take the opportunity afforded by PCIM, Europe’s leading power electronics exhibition and conference (Nuremberg Messe, 11-13th June) to demonstrate how the company’s product portfolio is developing to address higher power applications such as motor drives, inverters and data centres, as well as lower power, ultra-compact smart portable device adapters and chargers.
As well as introducing a new product family, and showing a selection of informative demos on its booth (Hall 7 stand 643), CGD will have a very visible presence around the show with various presentations.
- 15.00, Tuesday 11th June, Hall 9-642: Dr Giorgia Longobardi, CGD’s CEO, will formally launch the company’s latest ICeGaN™ 650V family of GaN ICs, targeting applications in the 1kW to 5kW range.
- 13.30, Tuesday 11th June, Technology Stage (Hall 7 Stand 743): CGD’s CTO, Professor Florin Udrea will take part in a panel discussion hosted by Markt & Technik editor, Engelbert Hopf.
- 14:20, Wednesday 12th June, Technology Stage (Hall 7 booth 743): Professor Udrea will be part of a panel discussion hosted by Bodo’s Power Systems, entitled ‘GaN Wide Bandgap Design, the Future of Power.’
- 14.10, Thursday 13th June, Technology Stage (Hall 7 booth 743): Di Chen, Director of Business Development & Technical Marketing, CGD, and José Quiñones Staff Applications Engineer at Qorvo will share the stage with a joint presentation ‘GaN Power ICs and Power Application Controller Optimize Performance in BLDC and PMSM Motor Drives.’
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“With its inherent ruggedness and reliability, our ICeGaN™ GaN ICs are perfectly suited to meet the needs of higher power applications such as data centres and inverters. Our presentations and demos and the new devices which we are launching at the show will illustrate our capabilities for these markets.CGD’s Booth (Hall 7 643) will feature reference designs, evaluation boards and demos that support the company’s existing business in chargers and adapters as well as the new higher power applications. New exhibits include:
- Very high power density (30W/in3) 140W reference design produced with the Taiwanese Industrial Technology Research Institute (ITRI) board
- Single leg of a 3-phase automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles
- Two half-bridge evaluation boards with new thermally-enhanced DFN package designs
- A 2.7kW totem-pole power factor correction demo board
- Qorvo motor drive evaluation kit using ICeGaN
- Demo comparing a half-bridge circuit realized using ICeGaN vs discrete e-Mode GaN
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“The power electronics world has swung irrevocably in favour of GaN. Visit CGD during PCIM to experience the world’s easiest-to-use GaN, so your application can benefit from GaN’s greater efficiency and higher power density now, without any design delays.”Original – Cambridge GaN Devices
-
Navitas Semiconductor invites visitors to experience “Planet Navitas” at PCIM 2024 (June 11th-13th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW.
Aligned with Navitas’ mission to “Electrify Our World™”, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for fully-electrified EV transportation, AI data centers, industrial compressors, drives, and robotics plus renewable energy sourcing and storage.
Each example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050.
“PCIM is a key event in the power-electronics calendar,” says Alessandro Squeri, Navitas’ senior director for European sales. “Complementary GaNFast and GeneSiC portfolios, with comprehensive, application-specific system design support, accelerate customer time-to-market with sustainable performance advantages. ‘Planet Navitas’ represents the very real, inspiring implementation of GaN & SiC that makes up a $1.6B identified customer pipeline as part of a vast $22B/year market opportunity.”
Major technology updates and releases include GaNSafe™ – the world’s most-protected, most reliable, and highest-performance GaN power, Gen-4 GaNSense™ Half-Bridge ICs – the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs – for game-changing motor drive and energy-storage applications.
In addition to the exhibition, PCIM 2024 includes peer-review technical presentations, including:
11th June, 13:00 – 14:30, Hall 10.1
- “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”– Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
- A low-cost 300 W high-density AC-to-DC converter has been designed and demonstrated to achieve >96% peak efficiency and 270 cc. The circuit topologies include a 2-phase interleaved PFC input stage, an LLC DC-DC stage, and a synchronous rectification output stage. The design includes GaN Power ICs and off-the-shelf controllers running at 300 kHz. This new design has resulted in a cased power density of 1.1 W/cc.
12th June, 15:30 – 17:00, Foyer
- Evaluation of SiC Devices for Over 500 kHz Application Based on Buck Circuit – Minli Jia, Sr. Staff Applications Engineer, Navitas Semiconductor
- This paper selects three 1200 V SiC devices of similar specifications and different manufacturers for analysis and experimental research and designs a Buck converter with an output power of 3.6 kW and a switching frequency of 600 kHz. The efficiency and heat of three SiC types were tested under the same working conditions, and the results showed that the SiC with fast turn-off characteristics and low thermal resistance was more suitable for high-frequency converter applications.
Original – Navitas Semiconductor
- “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”– Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
-
Transphorm, Inc. announced that its PCIM 2024 showcase will underscore its ability to outperform competitive wide bandgap technologies in higher power systems. For example, Transphorm’s normally-off d-mode SuperGaN®platform delivers higher electron mobility resulting in lower crossover losses versus Silicon Carbide—making it more a cost-effective, higher performing solution for various electric vehicle, datacenter/AI, infrastructure, renewable energy, and other broad industrial applications. To learn more, visit Transphorm during PCIM in Hall 7, Stall 108 during June 11 to 13, 2024.
Transphorm SuperGaN FETs are in production in a wide range of customer products crossing the power spectrum from low 45 W power adapters to higher power 7.5 kW PSUs. Many of these customer products are the first publicly recognized GaN-based systems of their kind and uniquely demonstrate advantages enabled only by the SuperGaN platform.
Examples include the previously mentioned liquid-cooled 7.5 kW PSU for mission-critical datacenter/blockchain applications; a 2.7 kW server CRPS with > 82 W/in3 power density (highest in any GaN power system available today); and 2.2 kW and 3 kW rack-mount 1U uninterruptible power supplies (UPSes). These design wins illustrate Transphorm’s ability to drive GaN into the various application markets composing an estimated GaN TAM of $8 billion by 2028.
In addition to real-world customer products, Transphorm continues to lead in technological achievements having recently demonstrated a 5 microsecond short-circuit withstand time, a bidirectional four-quadrant switch, and a 1200 V GaN-on-Sapphire device.
On-site demonstrations will include Transphorm solutions for 2- and 3-wheeler electric vehicle chargers along with customer PSUs for renewable energy systems, data centers, and more.
Speaking Engagement
Learn more about how Transphorm’s GaN solutions outperform competitive technologies and enable cross-industry innovations during the Bodo’s Power Systems session.
Panel: GaN Wide Bandgap Design, the Future of Power
Speaker: Philip Zuk, Senior Vice President, Business Development and Marketing
Date: June 12
Time: 2:20 – 3:20 p.m. CEST
Location: Hall 7, Stall 743Original – Transphorm
-
Like PCIM Europe, which takes place annually in Nuremberg in Germany, the PCIM event in China is an international meeting ground for specialists in power electronics and its applications in drive technologies and power quality. This year PCIM Asia will be held on August 29-31, 2023 in Shanghai.
The event offers a chance to see the latest developments in power electronics components and systems. The strong link between conference and exhibition guarantees the high quality of the show. This unique combination fosters the fast and easy exchange between industry and science, for which PCIM Asia is famous.
This is where experts from industry and academia meet, where new trends and developments are presented to the public for the very first time. In this way, the event mirrors the entire value chain – from components, drives control and packaging to the final intelligent system.
PCIM Asia is an international exhibition and conference focusing on power electronic device industry chain in Asia. It is the first choice platform for domestic and foreign well-known device manufacturers to release new products and latest technologies. A number of enterprises in the field of electronic materials, inductive components and passive component products will debut in PCIM Asia for the first time.
PCIM Asia Conference is highly praised for its in-depth discussion of the latest industrial scientific research achievements with the combination of academics and industries.
Original – PCIM Asia
