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Axcelis Technologies has announced the successful completion of a customer evaluation of its Purion XEmax high-energy ion implanter at a leading semiconductor foundry. The system has been qualified for the production of Power Management Integrated Circuits (PMICs), supporting the development of next-generation power management devices.
The qualification reflects increasing demand for higher-energy ion implantation processes used in advanced PMIC manufacturing. According to Axcelis, the Purion XEmax is capable of delivering ion implantation energies of up to 15 MeV through its dual RF linear accelerator (LINAC) architecture and patented Boost Technology.
PMICs integrate multiple power management functions—including voltage regulation, battery charging, and thermal management—onto a single chip. They are widely used in applications ranging from consumer electronics to electric vehicles and industrial systems, where efficient power conversion and management are critical.
The Purion XEmax is part of Axcelis’ Purion XE family of high-energy ion implanters, which are designed for advanced semiconductor manufacturing. The product line includes systems optimized for standard high-energy implantation, higher-throughput production, high-volume manufacturing, power semiconductor devices, and ultra-high-energy applications.
According to the company, the Purion XE platform combines RF LINAC technology with high-energy capability, broad process flexibility, and contamination control to support advanced semiconductor fabrication.
Key features of the Purion XEmax include:
- High-energy ion implantation up to 15 MeV
- Dual RF linear accelerator (LINAC) architecture
- Patented Boost Technology
- Optimized for advanced PMIC manufacturing
- Designed for next-generation semiconductor devices requiring ultra-high-energy implantation
Original – Axcelis Technologies
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Micro Commercial Components (MCC) has introduced the MIB30N65AT2Y-TP, a 650 V Trench Field-Stop (TFS) IGBT designed for high-efficiency industrial power conversion applications. The device combines low conduction losses, high current capability, and robust thermal performance in a compact D2-PAK package, targeting applications such as industrial power supplies, renewable energy systems, EV charging equipment, and uninterruptible power supplies (UPS).
The MIB30N65AT2Y-TP features a 650 V collector-emitter voltage rating and supports a continuous collector current of 30 A. Built using Trench Field-Stop technology, the IGBT delivers a typical collector-emitter saturation voltage (VCE(sat)) of 1.75 V, helping reduce conduction losses while improving overall power conversion efficiency.
The device also supports a pulse collector current of up to 120 A, providing robustness against transient overload and high inrush current conditions. Smooth switching characteristics make it suitable for soft-switching converter topologies, while a positive temperature coefficient simplifies parallel operation by promoting natural current sharing between devices.
Designed for demanding operating environments, the IGBT supports a maximum junction temperature of 175°C and is housed in a surface-mount D2-PAK package that provides efficient thermal dissipation while enabling automated PCB assembly.
The MIB30N65AT2Y-TP is intended for a variety of high-power applications, including:
- Industrial power supplies
- Renewable energy systems
- EV charging equipment
- Welding power converters
- Uninterruptible power supplies (UPS)
- High-current switching systems
Key specifications include:
- 650 V collector-emitter voltage rating
- 30 A continuous collector current
- 120 A pulse collector current
- Typical VCE(sat) of 1.75 V
- Trench Field-Stop (TFS) technology
- Smooth switching performance
- Positive temperature coefficient
- Maximum junction temperature of 175°C
- D2-PAK package
- RoHS compliance
Original – Micro Commercial Components
