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Infineon Technologies AG successfully placed €2 billion of corporate bonds under its European Medium Term Notes (EMTN) program. The issuance was several times oversubscribed and structured in three tranches with different maturities, supporting the company’s refinancing plans for fiscal year 2026.
Infineon said the proceeds will be used to refinance upcoming maturities in FY2026, refinance EUR bank loans assumed as part of the acquisition of Marvell’s Automotive Ethernet business, and help fund the planned acquisition of ams OSRAM’s non-optical analog/mixed-signal sensor portfolio.
“We are pleased with the successful transaction, which demonstrates the capital markets’ confidence in Infineon and our profitable growth trajectory. It is evidence of our conservative financial policy as it extends our maturity profile and thus further strengthens our financial resilience,” said Dr. Sven Schneider, Chief Financial Officer of Infineon.
The bond offering comprises three fixed-rate tranches:
- €750 million, 5-year maturity, 3.0% p.a. coupon
- €750 million, 8-year maturity, 3.5% p.a. coupon
- €500 million, 11-year maturity, 3.75% p.a. coupon
The notes were issued in partial debentures with a nominal value of €100,000 each and placed exclusively with qualified institutional investors. The bonds are rated BBB+ by S&P Global Ratings.
Original – Infineon Technologies
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Micro Commercial Components (MCC) expanded its power MOSFET lineup with the MCG052P10Y and MCAC054P10Y, two 100 V P-channel MOSFETs designed for high-current high-side switching in space-constrained power designs. The devices target common pain points in higher-voltage systems, including conduction losses, gate-drive complexity and thermal limits that can undermine efficiency and long-term reliability.
The MCG052P10Y is offered in a compact DFN3333 package, while the MCAC054P10Y comes in the higher-power DFN5060 footprint. Built on split gate trench MOSFET technology, both parts combine low RDS(on), strong current handling and low thermal resistance to reduce losses, limit switching stress and move heat efficiently into the PCB. With a 100 V drain-source rating, they are positioned as space-efficient building blocks for demanding power applications that require robust high-side switching.
Key features and benefits:
- Low RDS(on): 52 mΩ (max) for MCG052P10Y-TP and 54 mΩ (max) for MCAC054P10Y-TP at VGS = 10 V, reducing conduction losses
- Split Gate Trench MOSFET Technology optimized for low switching losses and high efficiency in high-side switching
- High current capability: 16 A continuous drain current (DFN3333) and up to 25 A (DFN5060)
- Low Thermal Resistance: Junction‑to‑case thermal resistance of 5°C/W (DFN3333) and 1.86°C/W (DFN5060) enables efficient heat dissipation through the PCB
- 100 V VDS rating suitable for higher-voltage power designs
Original – Micro Commercial Components
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Efficient Power Conversion (EPC) announced a broad licensing agreement with Renesas Electronics Corporation aimed at accelerating adoption of GaN in high-efficiency power systems.
Under the agreement, Renesas will gain access to EPC’s low-voltage eGaN technology and EPC’s established supply-chain ecosystem. The companies plan to collaborate over the next year to stand up internal wafer fabrication capability for these products. Renesas will also second-source several EPC GaN devices that are already in mass production, a move intended to improve supply-chain resilience and long-term availability for customers.
The partnership is framed around the rising demand for higher efficiency, higher power density, and lower carbon footprints in power conversion, where silicon is increasingly constrained by physical limits. GaN transistors, by contrast, enable faster switching, higher efficiency, and smaller form factors—benefits that are driving architecture shifts from consumer applications to AI data center power.
“Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency – cutting costs in AI data centers and enhancing autonomous systems,” said Alex Lidow, CEO of EPC.
Renesas recently expanded its GaN position through the acquisition of Transphorm, strengthening its high-voltage GaN portfolio for applications such as AC-DC power supplies, EV chargers, solar inverters, and industrial motor drives. By adding EPC’s low-voltage eGaN expertise, Renesas aims to broaden its portfolio across low- to high-voltage segments, supporting high-volume opportunities such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-powered designs.
“Expanding our business into low-voltage GaN allows us to serve the fastest-growing power segments,” said Rohan Samsi, VP, GaN Business Division at Renesas. “This agreement with EPC complements our established high-voltage 650 V+ portfolio and enables us to capitalize on high-volume markets such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-operated applications.”
Original – Efficient Power Conversion
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Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
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Navitas Semiconductor introduced a 10 kW DC-DC reference platform designed to accelerate the shift toward high-voltage DC (HVDC) power architectures in AI data centers. The company said the platform reaches up to 98.5% peak efficiency at 1 MHz switching frequency, enabling higher power density for large-scale data center expansion.
The all-GaN design uses advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge topology with synchronous rectification. In a full-brick form factor (61 × 116 × 11 mm), Navitas reports 98.5% peak efficiency and 98.1% full-load efficiency, delivering 2.1 kW/in³ power density.
Navitas positions the platform as production-oriented and compatible with both 800 V–to–50 V and ±400 V–to–50 V architectures at 10 kW. It integrates auxiliary power and control functions to simplify adoption and support compact, high-power-density module designs for next-generation HVDC AI data centers.
“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”
The 10 kW DC-DC platform is currently being evaluated with key data center customers through collaborative development and is scheduled to debut publicly at APEC in San Antonio, Texas, March 22–26, at the Navitas booth (#2027).
Original – Navitas Semiconductor
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STMicroelectronics announced an expanded strategic collaboration with Amazon Web Services (AWS) through a multi-year, multi-billion USD commercial engagement spanning several product categories. The agreement positions ST as a strategic supplier of semiconductor technologies and products that AWS will integrate into its compute infrastructure to support new high-performance compute instances, lower operational costs, and improved scalability for compute-intensive workloads, including AI and cloud applications.
Under the commercial arrangement, AWS will leverage a broad set of ST proprietary technologies. ST will supply solutions across high-bandwidth connectivity and high-performance mixed-signal processing, microcontrollers for intelligent infrastructure management, and analog and power ICs designed to improve energy efficiency in hyperscale data center operations. The collaboration is intended to help customers reduce total cost of ownership and accelerate time-to-market by addressing increasing requirements for compute performance, efficiency, and data throughput.
“This strategic engagement establishes ST as an important supplier to AWS and validates the strength of our innovation, proprietary technology portfolio, and proven manufacturing-at-scale capabilities,” said Jean-Marc Chery, President and CEO of STMicroelectronics. “Our advanced semiconductor solutions will directly power AWS’s next-generation infrastructure, enabling their customers to push the boundaries of AI, high-performance computing, and digital connectivity.”
As part of the expanded relationship, ST will also work with AWS to optimize electronic design automation (EDA) workloads in the cloud. AWS’s scalable compute capabilities are expected to help accelerate silicon design by enabling parallelized workloads and greater flexibility to match dynamic compute needs.
ST also issued warrants to AWS for the acquisition of up to 24.8 million ordinary shares of ST. The warrants will vest in tranches over the term of the agreement, with vesting substantially tied to payments for ST products and services purchased by AWS and its affiliates. AWS may exercise the warrants over a seven-year period from the issue date at an initial exercise price of $28.38.
Original – STMicroelectronics
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Axcelis Technologies, Inc. announced that its stockholders approved all proposals related to the company’s pending merger with Veeco Instruments Inc. at Axcelis’ Special Meeting of Stockholders. The final voting results will be disclosed in a Form 8-K filing with the U.S. Securities and Exchange Commission.
Completion of the merger remains subject to customary closing conditions, including final outstanding regulatory approval from the State Administration for Market Regulation of the People’s Republic of China. Axcelis and Veeco continue to expect the transaction to close in the second half of 2026.
Original – Axcelis Technologies
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Infineon Technologies AG introduced the EiceDRIVER™ 1ED301xMC12I family, a series of high-performance isolated gate driver ICs featuring an opto-emulator input. The devices are pin-compatible with existing opto-emulators and optocouplers and are designed to deliver higher common-mode transient immunity (CMTI), a robust output stage, and more accurate timing than typical opto-based solutions. This allows engineers to migrate to SiC technology while keeping established opto-based control schemes and avoiding a redesign.
The 1ED301xMC12I portfolio includes three variants—1ED3010, 1ED3011 and 1ED3012—covering Si MOSFET, IGBT and SiC MOSFET use cases. Each device provides up to 6.5 A output current, supporting power modules and parallel switch configurations. The ICs are offered in a CTI 600 6-pin DSO package with more than 8 mm creepage and clearance. Insulation is certified to UL 1577 and is pending certification to IEC 60747-17.
For switching precision and robustness, the opto-emulator interface uses a two-pin input designed for high noise immunity. The family specifies CMTI greater than 300 kV/µs, a propagation delay of 40 ns, and timing matching below 10 ns to support consistent high-speed switching behavior. A pure PMOS sourcing stage is included to improve turn-on performance.
The 1ED3010MC12I, 1ED3011MC12I and 1ED3012MC12I are available now through Infineon and its distribution partners. Infineon also offers the EVAL-1ED3012MC12I-SIC evaluation board to simplify testing with Infineon switches.
Original – Infineon Technologies
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Renesas Electronics reported solid underlying profitability on a non-GAAP basis for the year ended December 31, 2025, reflecting resilient margins and disciplined cost control, even as IFRS results were impacted by non-recurring charges and amortization.
Full-Year 2025 Highlights (Non-GAAP):
- Revenue: ¥1,318.5 billion
- Gross profit: ¥759.9 billion (57.6% margin)
- Operating profit: ¥386.9 billion (29.3% margin)
- Profit attributable to owners: ¥329.3 billion (25.0% margin)
- EBITDA: ¥464.1 billion (35.2% margin)
Q4 2025 Performance (Non-GAAP):
- Revenue: ¥350.9 billion
- Operating profit: ¥108.0 billion (30.8% margin)
- Profit attributable to owners: ¥90.0 billion
- EBITDA: ¥127.8 billion
IFRS Results Reflect One-Time Impacts:
- Full-year IFRS operating profit: ¥201.2 billion
- IFRS net loss attributable to owners: ¥51.8 billion
- IFRS gross margin: 57.1%
The IFRS loss was primarily driven by amortization of acquired intangible assets, stock-based compensation, and other non-recurring adjustments.
Despite the IFRS loss, Renesas maintained industry-leading gross margins near 58%, underscoring the strength of its product mix in automotive, industrial, and embedded processing markets.
The company continues to benefit from scale in automotive electronics, industrial automation, and data-centric applications, while integration-related costs and accounting adjustments weighed on reported IFRS earnings.
Overall, Renesas’ 2025 results highlight a clear divergence between accounting impacts and operational performance, with strong cash-generating capability and profitability on an underlying basis positioning the company well for long-term growth.
Original – Renesas Electronics
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ROHM reported solid improvement in financial performance for the nine months ended December 31, 2025, reflecting higher sales, structural cost reforms, and strengthening demand in automotive, industrial, and data-center-related markets.
Key Financial Highlights (9M FY2025):
- Net sales: ¥369.5 billion, up 7.2% year-on-year
- Operating profit: ¥9.7 billion (vs. operating loss of ¥11.1 billion a year earlier)
- Ordinary profit: ¥15.1 billion
- Profit attributable to owners: ¥14.8 billion
- EBITDA: ¥51.3 billion, up 1.6% YoY
- Equity ratio: 63.8%, up from 61.7% at FY2024 year-end
Business Drivers:
- Automotive: Continued growth, particularly in xEV-related and power semiconductor products
- Industrial & Consumer: Recovery supported by inventory normalization and strong demand in amusement, factory automation, and server markets
- Data centers & AI: Rising investment driving demand for power devices
- SiC power devices: Sales momentum improving, though temporary quality-assurance costs weighed on near-term profitability
Cash Flow & Financial Position:
- Operating cash flow: ¥71.3 billion
- Net cash at period end: ¥300.9 billion
- Reduced capital intensity and disciplined cost controls supported balance-sheet strength
Accounting Change Impact:
- Transition to straight-line depreciation reduced depreciation expense and boosted operating and ordinary profit for the period
Revised Full-Year FY2026 Outlook (ending March 31, 2026):
- Net sales: ¥480.0 billion (+7.0% YoY)
- Operating profit: ¥6.0 billion
- Ordinary profit: ¥11.0 billion
- Profit attributable to owners: ¥10.0 billion
- Improvement expected as temporary SiC quality-related costs subside
Strategic Focus:
ROHM continues executing its “MOVING FORWARD to 2028” mid-term plan, emphasizing:- Structural reforms and manufacturing optimization
- Portfolio reshaping toward automotive, power, and SiC technologies
- Profitability improvement and resilience against market volatility
Overall, ROHM’s results signal a clear earnings recovery trajectory, with automotive electrification, AI-driven infrastructure, and disciplined cost management positioning the company for improved profitability in FY2026 and beyond.
Original – ROHM
