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Infineon Technologies has partnered with ADVANTICS to supply its 1200 V CoolSiC™ MOSFETs and dual-channel EiceDRIVER™ 2EDB9259Y gate drivers for a new generation of liquid-cooled silicon carbide power converters. The collaboration targets high-power applications including megawatt charging systems (MCS) for heavy-duty electric vehicles and marine vessels, as well as battery energy storage systems (BESS), DC microgrids, and AI data center power infrastructure.
The growing electrification of heavy-duty transport requires charging infrastructure capable of delivering significantly higher power levels than conventional fast chargers. Megawatt Charging Systems (MCS) enable substantially shorter charging times for commercial trucks, mining equipment, and marine vessels, helping reduce operational downtime and accelerate the transition toward zero-emission transportation.
Infineon’s silicon carbide power semiconductors provide the efficiency and power density needed to support these next-generation charging platforms.
ADVANTICS’ new converter platform is built around 100 kW liquid-cooled power modules, allowing systems to be scaled into the megawatt range.
Key platform features include:
- Modular 100 kW building blocks
- Scalable to megawatt-class systems
- Bidirectional power conversion
- Wide operating voltage up to 1500 V
- Peak efficiency of up to 98.5%
- Liquid-cooled thermal management
The architecture supports seamless integration with electrical grids, battery storage systems, and high-power EV charging infrastructure.
The platform utilizes:
- Infineon CoolSiC™ 1200 V MOSFETs
- EiceDRIVER™ 2EDB9259Y dual-channel gate drivers
Together, these devices enable:
- Higher conversion efficiency
- Increased power density
- Reduced system losses
- Improved reliability
- More compact converter designs
Silicon carbide technology also enables higher switching frequencies, reducing passive component size while improving overall system performance.
The jointly developed platform addresses a wide range of high-power applications, including:
- Megawatt Charging Systems (MCS)
- Heavy-duty electric trucks
- Electric marine vessels
- Battery energy storage systems (BESS)
- DC microgrids
- AI data center power infrastructure
- Grid-connected industrial power systems
By combining Infineon’s wide-bandgap semiconductor portfolio with ADVANTICS’ expertise in high-power converter design, the collaboration aims to accelerate deployment of efficient, scalable power conversion systems for sectors that have traditionally been difficult to electrify.
The partnership reflects the increasing adoption of silicon carbide technology in megawatt-scale power electronics, where high efficiency, high power density, and reliable operation are essential for next-generation charging infrastructure and energy systems.
Original – Infineon Technologies
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Navitas Semiconductor has issued a statement responding to the patent infringement lawsuit recently filed by Wolfspeed in the U.S. District Court for the District of Delaware. The company disputes the allegations, describes the claims as unfounded, and states that it intends to vigorously defend both its products and its intellectual property while continuing to execute its growth strategy in gallium nitride (GaN) and silicon carbide (SiC) power semiconductors.
Navitas confirmed it is aware of the patent infringement complaint but stated that, due to the ongoing legal proceedings, it will limit its public comments.
The company said it:
- Disputes the infringement allegations
- Intends to vigorously defend itself and its products
- Expects to prevail in the litigation
- Will continue executing its business and product roadmap throughout the legal process
In its statement, Navitas highlighted its long history of developing wide-bandgap semiconductor technologies, emphasizing that its GaN and SiC products are the result of decades of independent research, engineering, and product development.
The company noted that its technology portfolio is supported by a substantial global intellectual property portfolio and reiterated its commitment to respecting intellectual property rights while protecting its own innovations.
Navitas stated that the litigation will not alter its strategic focus on serving rapidly expanding markets for next-generation power semiconductors, including applications such as:
- AI data centers
- Industrial power systems
- Electric vehicles
- Renewable energy
- High-efficiency power conversion
The company reaffirmed its commitment to delivering GaNFast™ and GeneSiC™ product innovations as demand for wide-bandgap semiconductor technologies continues to grow.
Because the matter is now before the courts, Navitas indicated it does not intend to provide additional public commentary on the litigation at this time.
Original – Navitas Semiconductor
