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Magnachip Semiconductor Corporation has introduced its 8th-generation 40 V and 60 V medium-voltage (MV) MOSFETs, aimed at improving efficiency and power density in server and high-performance computing (HPC) power supply units.
The new devices are optimized for synchronous rectification (SR) stages, a critical part of modern server power architectures. Leveraging advanced split-gate trench (SGT) technology, the 40 V variants deliver up to 40% higher current density and approximately 25% faster switching speeds compared to the previous generation, while the 60 V versions achieve up to 50% higher current density and 60% faster switching.
Additional enhancements include fast anti-parallel diode technology to improve switching stability and reduce residual current effects. The MOSFETs support operation up to 175°C and are packaged in compact PDFN56 formats, enabling high-density designs required in AI servers and HPC systems.
Magnachip is expanding its portfolio with multiple RDS(on) options, including 0.8 mΩ and 1.0 mΩ (40 V) and 1.05 mΩ (60 V), following the earlier release of a 0.7 mΩ device. This broader lineup allows designers to optimize trade-offs between efficiency, thermal performance, and cost.
From a market perspective, this launch directly targets the fast-growing server power supply segment, driven by AI and data center expansion. Industry projections indicate steady growth in this market, reinforcing demand for high-efficiency, low-voltage power semiconductors.
Strategically, Magnachip is strengthening its position in the competitive low- to mid-voltage MOSFET space, where silicon technologies continue to dominate critical power stages despite the rise of GaN and SiC. By focusing on performance improvements in synchronous rectification, the company is addressing a key bottleneck in power conversion efficiency for next-generation computing infrastructure.
Original – Magnachip Semiconductor
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CVD Equipment Corporation reported mixed financial results for 2025, reflecting continued demand softness in its core equipment business alongside strategic restructuring initiatives.
In the fourth quarter, revenue declined 33.1% year-over-year to $5.0 million, primarily due to weaker sales in its CVD equipment segment. Orders totaled $3.5 million, supported by demand for gas delivery systems and research-related equipment, including orders tied to a wide bandgap semiconductor research center. The company reported a net loss of $1.3 million for the quarter, compared to a small profit in the prior year period.
For the full year 2025, revenue decreased modestly by 4.1% to $25.8 million, while gross margin improved to 28.3%, partly due to the absence of prior-year inventory charges. Net loss narrowed slightly to $1.6 million. However, declining cash reserves—from $12.6 million to $8.7 million—highlight ongoing financial pressure.
Operationally, the company cited several headwinds impacting bookings, including weaker demand for CVD systems, reduced U.S. government funding for universities, tariff-related uncertainty, and slower adoption in certain end markets.
In response, CVD Equipment has initiated cost-reduction measures, including workforce reductions expected to save approximately $1.8 million annually starting in 2026. The company has also adjusted its sales strategy by expanding the use of distributors and external sales channels.
A key strategic move is the planned divestiture of its SDC (gas delivery systems) division to Atlas Copco for approximately $16.9 million, expected to close in Q2 2026. The transaction will allow the company to refocus on its core CVD equipment business while strengthening its balance sheet and improving financial flexibility.
From a market perspective, CVD Equipment remains exposed to cyclical demand in semiconductor capital equipment, particularly in research and niche applications such as silicon carbide (SiC) materials. While long-term demand drivers—such as power electronics and wide bandgap materials—remain intact, near-term uncertainty and funding constraints are impacting order visibility.
The divestiture and restructuring signal a strategic pivot toward a more focused and financially resilient operating model, positioning the company to better align with emerging opportunities in SiC and advanced materials markets.
Original – CVD Equipment
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EPC Space has introduced two new evaluation boards designed to demonstrate high-frequency GaN power conversion in demanding applications such as aerospace, motor drives, and point-of-load (POL) converters.
The newly launched EPC7C010 and EPC7C011 boards are half-bridge power stages configured as buck converters. The EPC7C010 supports 100 V / 20 A operation, while the EPC7C011 targets higher voltage applications at 200 V / 10 A. Both platforms utilize EPC’s eGaN HEMT technology—specifically the EPC7004B and EPC7007B devices—paired with isolated gate driver modules.
Performance-wise, the boards demonstrate strong efficiency levels, with peak efficiency reaching 94.7% for the 100 V platform and 96.6% for the 200 V version. They are optimized for 350 kHz operation but can scale across a wide switching frequency range from 50 kHz to 1.5 MHz, enabling flexibility in design trade-offs between efficiency, size, and thermal performance.
The boards also integrate features such as adjustable dead-time control, galvanic isolation for balanced switching, and configurable output filtering, allowing engineers to tailor performance to specific application requirements.
From a market and technology perspective, these evaluation platforms highlight the continued push of GaN into high-reliability segments traditionally dominated by silicon and SiC. By enabling high-frequency operation with strong efficiency, EPC Space is targeting applications where size, weight, and performance are critical—particularly in aerospace and defense systems.
This release reinforces the broader trend of GaN adoption moving beyond consumer and data center markets into mission-critical environments, where reliability validation and system-level integration tools are essential for accelerating design cycles.
Original – EPC Space
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Toshiba Corporation has signed a memorandum of understanding (MoU) with ROHM Co., Ltd., Mitsubishi Electric Corporation, Japan Industrial Partners, and TBJ Holdings Corporation to begin discussions on a potential integration of their semiconductor and power device businesses.
The proposed integration would combine Toshiba Electronic Devices & Storage Corporation’s semiconductor operations with ROHM’s semiconductor business and Mitsubishi Electric’s power device division. The initiative aims to create a larger, more competitive entity capable of strengthening Japan’s position in the global power semiconductor market.
This development builds on ongoing collaboration between Toshiba and ROHM, including a joint plan submitted in 2023 to Japan’s Ministry of Economy, Trade and Industry to support domestic power semiconductor production. That initiative was recognized under government programs aimed at securing stable semiconductor supply chains.
Strategically, the inclusion of Mitsubishi Electric signals an ambition to achieve greater scale and technological depth, particularly in power devices—an area critical for electrification, renewable energy, and industrial systems. The integration could enhance manufacturing efficiency, expand customer reach, and consolidate R&D capabilities across the participating companies.
From a market perspective, this move reflects increasing regional consolidation efforts in response to intensifying global competition, especially from leading players in Europe, the U.S., and China. Japan is seeking to reinforce its domestic semiconductor ecosystem, particularly in power semiconductors where it retains strong technological heritage but faces scale challenges.
At this stage, the agreement marks the start of formal discussions. No final decisions have been made regarding transaction structure or implementation, with further details to be determined as negotiations progress.
Original – Toshiba
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Micro Commercial Components has introduced the MCACD6D3N06Y, a high-performance 60 V N-channel MOSFET designed to address efficiency, thermal, and space constraints in modern power systems.
The device features an ultra-low maximum RDS(on) of 6.3 mΩ, enabling reduced conduction losses and improved overall efficiency. Combined with a low junction-to-case thermal resistance of 1.6°C/W, the MOSFET supports effective heat dissipation, simplifying thermal management in high-power designs.
Built on advanced split-gate trench MOSFET technology, the MCACD6D3N06Y delivers fast switching performance and stable operation across demanding applications. Its 60 V rating makes it well-suited for 48 V power architectures, which are increasingly common in AI data centers, telecom infrastructure, and industrial systems.
The device is housed in a compact PDFN5060-8D package with an exposed thermal pad, enabling high power density and efficient board-level integration. A maximum junction temperature of 175°C further supports reliability in harsh operating environments.
From a market perspective, this product aligns with the growing shift toward 48 V intermediate power architectures, particularly in AI servers and high-performance computing systems. While wide-bandgap devices dominate high-voltage segments, advanced silicon MOSFETs like this remain critical for low-voltage, high-current stages—where efficiency, cost, and thermal performance are key design considerations.
MCC’s latest MOSFET reinforces its positioning in high-volume, cost-sensitive power applications, where incremental efficiency gains and compact packaging directly translate into system-level advantages.
Original – Micro Commercial Components
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Wolfspeed has completed its previously announced private placements, raising approximately $475.9 million through a combination of convertible notes, common stock, and pre-funded warrants, marking a significant step in its capital optimization strategy.
The financing included $379 million in 3.5% convertible senior secured notes due 2031, along with equity issuance and warrants. Proceeds were primarily used to redeem $475.9 million of existing senior secured notes due 2030, resulting in a reduction of total debt by approximately $97 million and lowering annual interest expenses by around $62 million.
The equity portion was priced at $18.458 per share, representing a premium to the company’s prior trading price, while the participation of major institutional investors such as T. Rowe Price and Fidelity highlights continued market confidence in Wolfspeed’s long-term growth trajectory and its leadership in silicon carbide technology.
From a financial strategy perspective, this refinancing improves Wolfspeed’s capital structure by extending debt maturities and reducing financing costs, providing greater flexibility to support ongoing investments in SiC innovation and capacity expansion.
Strategically, the strengthened balance sheet supports Wolfspeed’s focus on high-growth applications, including AI data centers, industrial electrification, and next-generation computing platforms. The company also highlighted continued progress in advancing 300 mm SiC wafer technology, which is expected to play a critical role in future high-performance and high-efficiency power systems.
From a market standpoint, this move reflects a broader trend among SiC leaders to secure financial resilience amid heavy capital expenditure cycles, particularly as demand accelerates across AI infrastructure, energy systems, and automotive electrification.
Original – Wolfspeed
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Semiconductor Manufacturing International Corporation reported solid financial performance for 2025, reflecting continued momentum in global semiconductor demand and strategic capacity expansion.
Revenue increased by 16.2% year-over-year to US$9.33 billion, while gross margin improved from 18.0% to 21.0%. Profit attributable to shareholders rose significantly by 39.0% to US$685 million, and EBITDA grew 20.0% to US$5.26 billion, indicating stronger operational efficiency despite ongoing depreciation pressures.
Operationally, SMIC achieved a major milestone by surpassing 1 million 8-inch equivalent wafers per month in capacity, with utilization rates rising to 93.5%. This reflects robust demand, particularly from high-growth sectors such as artificial intelligence, data centers, and automotive electronics.
From a strategic standpoint, SMIC continued to reinforce its position as the world’s second-largest pure-play foundry, supported by steady capacity expansion and increased localization demand in China’s semiconductor ecosystem. The company also advanced key structural initiatives, including investments and partnerships aimed at strengthening its long-term manufacturing and technology base.
Technology development remained a priority, with R&D spending reaching US$774 million (8.3% of revenue). Efforts focused on process optimization, product upgrades, and deeper collaboration across the semiconductor value chain, including advanced packaging capabilities.
Looking ahead, SMIC highlighted 2026 as a critical year, with a focus on scaling technology, improving operational efficiency, managing costs, and capturing growth opportunities in AI-driven and high-performance applications.
From a market perspective, SMIC’s results underline the continued strength of mature and mid-to-advanced node demand, particularly in power, automotive, and industrial segments. At the same time, high utilization and sustained investment signal ongoing supply-demand tightness in certain technology nodes, reinforcing the importance of regional manufacturing capacity in the evolving global semiconductor landscape.
Original – SMIC
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Taiwan Semiconductor has expanded its silicon carbide portfolio with new automotive-grade 1200 V SiC Schottky diodes in 1 A and 2 A variants, targeting compact, high-efficiency power conversion applications.
The newly introduced devices are offered in SOD-128 packages, positioning them among the smallest high-voltage SiC diodes available in the market. This enables significant board space reduction while maintaining high performance in low-current, high-voltage applications.
The diodes deliver low forward voltage (maximum 1.5 V), very low leakage current, and fast switching characteristics, minimizing both conduction and switching losses. With a maximum junction temperature of 175°C and AEC-Q qualification, they are designed for high-reliability environments, including automotive and industrial systems.
Key application areas include auxiliary power supplies, gate driver bias circuits, snubber networks, PFC stages in low-power designs, and high-frequency flyback converters. Their compact form factor is particularly advantageous in space-constrained designs such as EV subsystems and distributed power architectures.
From a market perspective, this launch reflects a growing trend toward miniaturized wide-bandgap components addressing niche but critical functions in power systems. While much of the SiC market focuses on high-current devices, Taiwan Semiconductor is targeting the underserved low-current, high-voltage segment—supporting increasing system complexity in automotive electrification, AI power delivery, and industrial electronics.
By combining automotive qualification with ultra-compact packaging, the company strengthens its position in differentiated SiC niches where size, efficiency, and reliability are key design drivers.
Original – Taiwan Semiconductor
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Micro Commercial Components has introduced its SICW Series Gen4 silicon carbide Schottky barrier rectifiers, targeting improved efficiency, thermal performance, and reliability in high-voltage power conversion applications.
Built on MCC’s Gen4 Junction Barrier Schottky (JBS) SiC technology, the SICW Series delivers zero reverse recovery behavior combined with a low forward voltage drop between 1.45 V and 1.6 V. This significantly reduces both switching and conduction losses, making the devices well-suited for high-frequency power systems.
The product family covers voltage ratings from 650 V to 1200 V and current ranges from 10 A to 40 A, supporting a wide range of industrial, transportation, and energy applications. A positive temperature coefficient of forward voltage enables stable current sharing in parallel configurations, while a maximum junction temperature of 175°C enhances robustness under demanding thermal conditions.
From a packaging perspective, the devices are offered in TO-247AB and TO-247AD formats with large heat-dissipation tabs, enabling efficient thermal management and simplified system integration.
From a market standpoint, this release aligns with ongoing industry trends toward higher switching frequencies and increased power density, particularly in industrial drives, EV infrastructure, and renewable energy systems. By improving efficiency and reducing cooling requirements, MCC’s Gen4 SiC rectifiers support system-level cost optimization and compact design—key factors as electrification and AI-driven power demand continue to scale.
Original – Micro Commercial Components
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Okmetic has expanded its wafer portfolio to include 300 mm polished wafers and 150–300 mm epitaxial (EPI) wafers through qualified manufacturing partners, strengthening its position as a Europe-based supplier across multiple semiconductor segments.
The company will continue its in-house production of advanced 150–200 mm silicon and bonded SOI wafers, while leveraging external partners for larger wafer sizes and EPI solutions. Despite outsourcing production, Okmetic retains full responsibility for supply chain management and wafer quality, ensuring consistent performance and customer experience.
This hybrid manufacturing model enhances supply flexibility and enables Okmetic to address a broader range of applications, including memory, logic, power, RF, and mixed-signal devices. At the same time, the company maintains strong support for its core markets such as MEMS, sensors, and power semiconductors. Notably, Okmetic also continues to support long-term demand for 150 mm wafers, while its expanded 200 mm polished wafer capacity entered volume production in early 2026.
From a market perspective, this move reflects increasing demand for diversified wafer sourcing strategies, particularly as customers balance legacy nodes (150/200 mm) with advanced 300 mm manufacturing. By combining internal capabilities with partner manufacturing, Okmetic is aligning with industry trends toward supply chain resilience, multi-sourcing, and scalable capacity.
The expansion also positions Okmetic to better support evolving device architectures, including GaN-on-Si and advanced power devices, where substrate quality and availability remain critical. Ongoing R&D collaboration with customers and research partners further supports future technology roadmaps and next-generation semiconductor applications.
Original – Okmetic
