Micro Commercial Components (MCC) expanded its power MOSFET lineup with the MCG052P10Y and MCAC054P10Y, two 100 V P-channel MOSFETs designed for high-current high-side switching in space-constrained power designs. The devices target common pain points in higher-voltage systems, including conduction losses, gate-drive complexity and thermal limits that can undermine efficiency and long-term reliability.

The MCG052P10Y is offered in a compact DFN3333 package, while the MCAC054P10Y comes in the higher-power DFN5060 footprint. Built on split gate trench MOSFET technology, both parts combine low RDS(on), strong current handling and low thermal resistance to reduce losses, limit switching stress and move heat efficiently into the PCB. With a 100 V drain-source rating, they are positioned as space-efficient building blocks for demanding power applications that require robust high-side switching.

Key features and benefits:

  • Low RDS(on): 52 mΩ (max) for MCG052P10Y-TP and 54 mΩ (max) for MCAC054P10Y-TP at VGS = 10 V, reducing conduction losses
  • Split Gate Trench MOSFET Technology optimized for low switching losses and high efficiency in high-side switching
  • High current capability: 16 A continuous drain current (DFN3333) and up to 25 A (DFN5060)
  • Low Thermal Resistance: Junction‑to‑case thermal resistance of 5°C/W (DFN3333) and 1.86°C/W (DFN5060) enables efficient heat dissipation through the PCB
  • 100 V VDS rating suitable for higher-voltage power designs

Original – Micro Commercial Components