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The power electronics market is shifting rapidly as Gallium Nitride (GaN) gains wider adoption, and Infineon Technologies has released the 2026 edition of its annual GaN Insights report, outlining the state of GaN technology, emerging applications and the company’s latest product direction.
“GaN has become a market reality that has gained traction across various industries,” said Johannes Schoiswohl, Head of GaN Systems Business Line at Infineon. He added that Infineon’s product-to-system approach, manufacturing expertise and broad portfolio are intended to help customers navigate GaN adoption and capture its full potential.
Infineon points to strong market expansion expectations through 2030, driven by higher production volumes and broader penetration into new end markets. The company also expects 2026 to bring a wider set of design opportunities, including expanded use of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon highlighted its high-voltage bidirectional GaN switch architecture based on a common-drain design with a double-gate structure using Gate Injection Transistor (GIT) technology, aimed at reducing die size versus conventional back-to-back approaches. In example system comparisons, Infineon notes that CoolGaN™ BDS operation up to 1 MHz can enable higher power output and lower system costs in solar microinverters.
The report also emphasizes GaN’s expansion into AI data centers, robotics, electric vehicles, renewable energy, and newer areas such as digital health and quantum computing. In data center power, Infineon describes GaN-enabled topologies as a path to higher efficiency and power density, supporting more compact architectures and lower losses. In robotics, the company highlights the potential for smaller motor drives with improved fine motion control.
Infineon positions its Integrated Device Manufacturing (IDM) strategy and 300-mm GaN manufacturing as key differentiators, alongside a portfolio spanning 40 V to 700 V across discrete and integrated solutions. The company cites recent platform examples including CoolGaN™ Transistor 650 V G5 devices, CoolGaN™ Transistor MV G5 parts with a monolithically integrated Schottky diode, and CoolGaN™ Automotive 100 V products aligned with AEC-Q101 requirements for the shift from 12 V to 48 V vehicle architectures.
Original – Infineon Technologies
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Infineon Technologies AG successfully placed €2 billion of corporate bonds under its European Medium Term Notes (EMTN) program. The issuance was several times oversubscribed and structured in three tranches with different maturities, supporting the company’s refinancing plans for fiscal year 2026.
Infineon said the proceeds will be used to refinance upcoming maturities in FY2026, refinance EUR bank loans assumed as part of the acquisition of Marvell’s Automotive Ethernet business, and help fund the planned acquisition of ams OSRAM’s non-optical analog/mixed-signal sensor portfolio.
“We are pleased with the successful transaction, which demonstrates the capital markets’ confidence in Infineon and our profitable growth trajectory. It is evidence of our conservative financial policy as it extends our maturity profile and thus further strengthens our financial resilience,” said Dr. Sven Schneider, Chief Financial Officer of Infineon.
The bond offering comprises three fixed-rate tranches:
- €750 million, 5-year maturity, 3.0% p.a. coupon
- €750 million, 8-year maturity, 3.5% p.a. coupon
- €500 million, 11-year maturity, 3.75% p.a. coupon
The notes were issued in partial debentures with a nominal value of €100,000 each and placed exclusively with qualified institutional investors. The bonds are rated BBB+ by S&P Global Ratings.
Original – Infineon Technologies
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Micro Commercial Components (MCC) expanded its power MOSFET lineup with the MCG052P10Y and MCAC054P10Y, two 100 V P-channel MOSFETs designed for high-current high-side switching in space-constrained power designs. The devices target common pain points in higher-voltage systems, including conduction losses, gate-drive complexity and thermal limits that can undermine efficiency and long-term reliability.
The MCG052P10Y is offered in a compact DFN3333 package, while the MCAC054P10Y comes in the higher-power DFN5060 footprint. Built on split gate trench MOSFET technology, both parts combine low RDS(on), strong current handling and low thermal resistance to reduce losses, limit switching stress and move heat efficiently into the PCB. With a 100 V drain-source rating, they are positioned as space-efficient building blocks for demanding power applications that require robust high-side switching.
Key features and benefits:
- Low RDS(on): 52 mΩ (max) for MCG052P10Y-TP and 54 mΩ (max) for MCAC054P10Y-TP at VGS = 10 V, reducing conduction losses
- Split Gate Trench MOSFET Technology optimized for low switching losses and high efficiency in high-side switching
- High current capability: 16 A continuous drain current (DFN3333) and up to 25 A (DFN5060)
- Low Thermal Resistance: Junction‑to‑case thermal resistance of 5°C/W (DFN3333) and 1.86°C/W (DFN5060) enables efficient heat dissipation through the PCB
- 100 V VDS rating suitable for higher-voltage power designs
Original – Micro Commercial Components
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Efficient Power Conversion (EPC) announced a broad licensing agreement with Renesas Electronics Corporation aimed at accelerating adoption of GaN in high-efficiency power systems.
Under the agreement, Renesas will gain access to EPC’s low-voltage eGaN technology and EPC’s established supply-chain ecosystem. The companies plan to collaborate over the next year to stand up internal wafer fabrication capability for these products. Renesas will also second-source several EPC GaN devices that are already in mass production, a move intended to improve supply-chain resilience and long-term availability for customers.
The partnership is framed around the rising demand for higher efficiency, higher power density, and lower carbon footprints in power conversion, where silicon is increasingly constrained by physical limits. GaN transistors, by contrast, enable faster switching, higher efficiency, and smaller form factors—benefits that are driving architecture shifts from consumer applications to AI data center power.
“Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency – cutting costs in AI data centers and enhancing autonomous systems,” said Alex Lidow, CEO of EPC.
Renesas recently expanded its GaN position through the acquisition of Transphorm, strengthening its high-voltage GaN portfolio for applications such as AC-DC power supplies, EV chargers, solar inverters, and industrial motor drives. By adding EPC’s low-voltage eGaN expertise, Renesas aims to broaden its portfolio across low- to high-voltage segments, supporting high-volume opportunities such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-powered designs.
“Expanding our business into low-voltage GaN allows us to serve the fastest-growing power segments,” said Rohan Samsi, VP, GaN Business Division at Renesas. “This agreement with EPC complements our established high-voltage 650 V+ portfolio and enables us to capitalize on high-volume markets such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-operated applications.”
Original – Efficient Power Conversion
