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Novel Crystal Technology, Inc. will begin shipping 150 mm (6-inch) β-Ga₂O₃ (gallium oxide) substrate samples in March 2026. The company said the milestone represents a key step toward large-scale industrial adoption of next-generation high-voltage power devices.
β-Ga₂O₃ features a bandgap energy exceeding that of silicon carbide (SiC) and gallium nitride (GaN), enabling higher breakdown voltage, lower energy loss and greater device miniaturization. The substrates are produced using a melt growth method, which the company said offers a combination of high performance and scalability suited to applications such as railways, industrial systems and electric power infrastructure.
Global demand for high-voltage, high-power devices is rising due to electrification across industrial and transportation sectors and the expansion of AI data centers. While β-Ga₂O₃ wafers have previously been limited to 100 mm (4-inch) R&D use, transitioning to 150 mm aligns the material with standard production lines. Novel Crystal Technology said this shift will support ecosystem development and pave the way for mass production of 150 mm β-Ga₂O₃ epi-wafers targeted for 2029.
Key Product Features
- EFG Growth Technology: The company leverages experience with the EFG method used for 100 mm β-Ga₂O₃ substrates to ensure quality and supply stability at 150 mm.
- Industry-Standard Compatibility: The 150 mm diameter matches existing power device production lines, supporting commercialization efforts.
- Development Enablement: Early supply of high-quality monocrystalline substrates allows partners to advance epitaxial growth and device process development ahead of large-scale production.
To improve cost competitiveness, the company is developing its DG Method, a growth technology designed to eliminate the need for expensive precious-metal crucibles. Novel Crystal Technology said this approach is expected to enable pricing that surpasses SiC in cost competitiveness.
Strategic Timeline:
- 2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples
- 2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method
- 2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates
Original – Novel Crystal Technology
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Toshiba Electronic Devices & Storage Corporation has introduced the 6500V/2000A press pack IEGT “ST2000JXH35A,” featuring newly developed trench-type IEGT chips designed for high-voltage converter applications such as DC power transmission systems, industrial motor drives, and STATCOM installations.
As renewable energy sources including wind, solar, and hydro power continue expanding to combat global warming, power generation sites are increasingly located far from major consumption areas. This trend is driving demand for long-distance transmission solutions.
High-voltage direct current (HVDC) systems are gaining traction due to their:
- Lower transmission losses over long distances
- Improved controllability compared to AC systems
- Enhanced ability to manage renewable output fluctuations
The ST2000JXH35A is designed to support these evolving grid requirements.
The newly developed trench-type IEGT chips feature an optimized cell structure that delivers:
- High turn-off capability
- High short-circuit withstand capability
The device has successfully passed both turn-off and short-circuit testing at a test voltage of 4500V, validating its suitability for demanding high-voltage environments.
By adopting the 6500V-rated ST2000JXH35A, system designers can reduce the number of series-connected devices in DC transmission systems by approximately 33% compared to 4500V-rated configurations.
This reduction enables:
- Lower system weight
- Smaller overall equipment footprint
- Reduced construction and transportation costs
These advantages are particularly significant for offshore converter stations, where logistics and structural costs are high.
Beyond DC power transmission, the ST2000JXH35A supports higher voltage and more compact designs in:
- Industrial motor-drive equipment
- STATCOM (Static Synchronous Compensator) systems
Toshiba stated it will continue developing press pack IEGTs for high-voltage converters and plans to further expand its product lineup to address the growing needs of energy infrastructure and industrial power systems.
Original – Toshiba
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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Veeco Instruments Inc. reported financial results for the fourth quarter and fiscal year ended December 31, 2025, with management highlighting accelerated bookings in the second half of the year and positioning for growth in 2026 driven by AI and high-performance computing (HPC).
Fourth Quarter 2025 Highlights
- Revenue: $165.0 million, compared with $182.1 million in Q4 2024
- GAAP Net Income: $1.1 million, or $0.02 per diluted share, compared with $15.0 million, or $0.26 per diluted share, in Q4 2024
- Non-GAAP Net Income: $14.7 million, or $0.24 per diluted share, compared with $24.2 million, or $0.41 per diluted share, in Q4 2024
Fiscal Year 2025 Highlights
- Revenue: $664.3 million, compared with $717.3 million in fiscal 2024
- GAAP Net Income: $35.4 million, or $0.59 per diluted share, compared with $73.7 million, or $1.23 per diluted share, in 2024
- Non-GAAP Net Income: $80.2 million, or $1.33 per diluted share, compared with $104.3 million, or $1.74 per diluted share, in 2024
On a non-GAAP basis, fourth-quarter operating income was $13.8 million, compared with $27.4 million in the prior-year period. For the full year, non-GAAP operating income was $84.3 million versus $116.1 million in 2024.
CEO Bill Miller said Veeco “executed well in 2025,” noting accelerated bookings in the second half across semiconductor, compound semiconductor and data storage markets. He said expanding backlog, increasing adoption of new technologies and the planned merger with Axcelis position the company for robust growth in 2026.
For the first quarter of 2026, Veeco expects:
- Revenue in the range of $150 million to $170 million
- GAAP diluted EPS between ($0.03) and $0.07
- Non-GAAP diluted EPS between $0.14 and $0.24
For full-year 2026, Veeco expects:
- Revenue between $740 million and $800 million
- GAAP diluted EPS between $0.83 and $1.17
- Non-GAAP diluted EPS between $1.50 and $1.85
The company said it believes continued momentum in AI and HPC markets, combined with strategic initiatives including the planned merger with Axcelis, will support long-term growth and value creation.
Original – Veeco Instruments
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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
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Efficient Power Conversion (EPC) will present its latest Generation 7 (Gen 7) GaN technology and integrated GaN ICs at the Applied Power Electronics Conference (APEC) 2026. At booth #1935, EPC will demonstrate production-ready power architectures targeting AI infrastructure and next-generation robotic systems, alongside a series of live technical presentations led by its engineering team.
EPC said the rapid expansion of AI computing is reshaping power delivery architectures, introducing 800 V distribution and megawatt-class racks that require higher efficiency, density and reliability throughout the power conversion chain. At the same time, humanoid robotics demand compact, lightweight and highly efficient electronics embedded directly within joints and actuators. The company will show how GaN technology enables point-of-load conversion in data centers and compact motor drives in robotics.
EPC will showcase multiple development platforms already deployed in customer programs across robotics, drones and high-performance computing. These include:
- EPC9176 and EPC91104 motor drive boards
- EPC9186 multi-device inverter
- Humanoid joint platforms EPC91118 and EPC91120
- DC-DC conversion solutions including EPC91200, EPC9196 and EPC9193 series
The company emphasized that while reference designs support development, its focus remains on scalable, production-ready devices built on the Gen 7 platform.
CEO Alex Lidow said the new Generation 7 transistors outperform MOSFETs across the 40 V to 15 V range and that EPC’s latest GaN ICs enable more compact, higher-performance motor drives for humanoid robots and drones.
At APEC 2026, EPC will host live booth presentations and technical sessions covering system architectures, reliability methodologies and application implementations. Highlights include:
- Tuesday, March 24 (10:30–11:10 am):
Alex Lidow – GaN Beats MOSFETs at All Voltages
Shengke Zhang – Leveraging Test-to-Fail Methodology to Ensure Reliable Field Operation of GaN Devices - Tuesday, March 24 (2:30–3:10 pm):
Marco Palma – GaN Inverters Reference Designs for Humanoid Robot Motor Joints
Michael de Rooij – 800 V to 12 V AI Servers Using Low-Voltage GaN in an ISOP Converter
Additional conference presentations will address topics including end-to-end GaN system design, reliability assessment under dynamic switching conditions, integrated magnetics for server power supplies, robotic micro-modules and mission-profile-driven reliability for AI data centers.
EPC representatives, including CEO Dr. Alex Lidow, will be available at booth #1935 to discuss GaN solutions for AI infrastructure, robotics and high-density power systems.
Original – Efficient Power Conversion
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ROHM Co., Ltd. has announced plans to integrate its proprietary GaN power device development and manufacturing technologies with process technology from TSMC, establishing an end-to-end GaN production system within the ROHM Group.
Under a newly signed license agreement, TSMC’s GaN process technology will be transferred to ROHM’s Hamamatsu facility, enabling the company to strengthen its supply capabilities in response to rapidly growing demand for GaN in applications such as AI servers and electric vehicles (EVs).
Gallium nitride (GaN) power devices offer superior high-voltage and high-frequency performance, enabling higher efficiency and reduced system size. While already widely adopted in consumer applications such as AC adapters, GaN is increasingly being used in high-voltage systems including:
- Power units for AI servers
- On-board chargers (OBCs) for EVs
Demand in these segments is expected to accelerate further as electrification and AI infrastructure continue to expand.
ROHM has been active in GaN development for years. The company established mass production of 150V GaN devices at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM strengthened its supply structure through external collaborations — with TSMC as a key partner.
Key milestones in the collaboration include:
- Adoption of a 650V GaN process from TSMC beginning in 2023
- A December 2024 partnership agreement focused on automotive GaN
The newly announced technology integration represents a deeper evolution of this collaboration.
ROHM aims to complete the technology transfer and establish the new production system in 2027, positioning the company to meet expanding demand in AI server and automotive applications.
Upon completion of the transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. However, both companies stated they will continue working together to advance higher-efficiency and more compact power supply systems.
By bringing GaN production capabilities fully in-house while leveraging TSMC’s advanced process technology, ROHM is strengthening its long-term competitiveness in next-generation power semiconductors.
Original – ROHM
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Micro Commercial Components (MCC) has introduced its Gen4 1200V SiC Schottky Diode Series, an automotive-qualified family of silicon carbide (SiC) Schottky Barrier Diodes engineered for high-efficiency, high-voltage power systems operating in demanding environments.
Rated at 1200 V VRRM, the new series features zero reverse recovery current, eliminating reverse recovery losses and significantly improving high-frequency efficiency. Compared with conventional silicon rectifiers, the Gen4 devices reduce switching losses and enable higher switching frequencies, contributing to improved overall power density across automotive, industrial and renewable energy applications.
Built on advanced Gen4 Junction Barrier Schottky (JBS) technology, the diodes deliver fast majority-carrier switching with enhanced leakage control and surge robustness. The devices offer forward voltage as low as 1.38 V at rated current, leakage current down to 0.1 µA at 25 °C, and capacitive charge as low as 10.2 nC (typical). They are specified for operation across a wide junction temperature range of −55 °C to +175 °C.
The series is AEC-Q101 qualified, supporting reliability requirements in automotive and harsh industrial environments. Additional features include high surge capability up to 85 A and a positive temperature coefficient of forward voltage to help prevent thermal runaway.
Available in DPAK and TO-220AC packages, the Gen4 1200V SiC Schottky Diode Series is designed to enable more efficient, compact and durable high-voltage power designs.
Key Features & Benefits:
- Zero reverse recovery current to eliminate reverse recovery losses and improve high-frequency efficiency
- AEC-Q101 qualification for automotive reliability
- 1200 V VRRM rating for high-voltage rectification architectures
- Forward voltage as low as 1.38 V to reduce conduction losses and thermal stress
- Ultra-low leakage current (down to 0.1 µA) for improved high-temperature stability
- High surge capability up to 85 A for demanding load transients
- Capacitive charge as low as 10.2 nC to reduce switching energy loss
- Operating junction temperature range of −55 °C to +175 °C
- Positive temperature coefficient to support thermal stability and prevent runaway
Original – Micro Commercial Components
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Navitas Semiconductor reported unaudited financial results for the fourth quarter and full year ended December 31, 2025, outlining progress in its transition to a high-power-focused strategy branded as “Navitas 2.0.”
President and CEO Chris Allexandre said the company accelerated its pivot toward high-power GaN and high-voltage SiC solutions during the quarter, with high-power markets contributing a majority of revenue for the first time. He highlighted a long-term strategic foundry and technology partnership with GlobalFoundries aimed at expanding U.S.-based GaN manufacturing, along with streamlined go-to-market efforts targeting AI data centers, energy and grid infrastructure, performance computing and industrial electrification.
Allexandre also noted the initiation of customer sampling for new 650 V GaN devices targeting AI data center applications, expanded sampling of mid-voltage 100 V GaN devices, and ultra-high-voltage 2300 V and 3300 V SiC modules. He said the company expects a return to sequential top-line growth beginning in the first quarter of 2026, supported by increased revenue from high-power markets and reduced exposure to mobile and consumer segments.
Fourth Quarter 2025 Financial Highlights
- Revenue: $7.3 million, compared to $10.1 million in Q3 2025 and $18.0 million in Q4 2024.
- GAAP Loss from Operations: $41.4 million, compared to $19.4 million in Q3 2025 and $39.0 million in Q4 2024.
- Non-GAAP Loss from Operations: $12.1 million, compared to $11.5 million in Q3 2025 and $12.7 million in Q4 2024.
- Q4 GAAP results included a $16.6 million restructuring and impairment charge, of which $3.8 million was non-cash.
- Cash and Cash Equivalents: $236.9 million as of December 31, 2025, up from $150.6 million at September 30, 2025.
- In November 2025, Navitas completed a private placement of common stock, generating net proceeds of $95.6 million to support its strategic shift toward higher-power markets.
Recent Market and Technology Highlights
- Announced a long-term strategic technology and manufacturing partnership with GlobalFoundries to accelerate U.S.-based GaN production, with availability targeted for late 2026.
- Accelerated sampling of 100 V and new 650 V GaN devices for AI data center 800 V HVDC and 48 V IBC architectures.
- Introduced an all-GaN 10 kW 800 V–to–50 V DC-DC platform delivering 98.5% peak efficiency.
- Expanded sampling of 2300 V and 3300 V ultra-high-voltage SiC products featuring Trench-Assisted Planar technology.
- Launched its 5th-generation GeneSiC™ platform to extend performance and reliability in AI data centers, grid and energy infrastructure, and industrial electrification.
- Formed a partnership with Cyient Semiconductors to co-develop GaN products and strengthen the ecosystem in India.
- Consolidated its Asian distribution channel and established global partnerships with WT Microelectronics and Avnet to accelerate adoption in AI data centers and high-performance computing markets.
First Quarter 2026 Outlook
For the first quarter of 2026, Navitas expects:
- Revenue between $8.0 million and $8.5 million.
- Non-GAAP gross margin of approximately 38.7%, ±25 basis points.
- Non-GAAP operating expenses of approximately $15 million.
Management said the company believes continued execution of its Navitas 2.0 strategy, combined with cost optimization and an accelerated product roadmap, positions it for renewed revenue growth and gradual improvement in margins over the coming year.
Original – Navitas Semiconductor
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STMicroelectronics has introduced MasterGaN6, marking the start of the second generation of its MasterGaN half-bridge family. The new power system-in-package combines an updated BCD driver with a high-performance GaN power transistor featuring 140 mΩ RDS(on), targeting compact, high-efficiency power conversion designs.
Building on the integration approach of the MasterGaN family, MasterGaN6 adds dedicated pins for fault indication and standby functionality to support smarter system management and improved power savings. The devices also integrate LDOs and a bootstrap diode, helping reduce external components while maintaining optimal gate-drive conditions.
ST said the updated driver is engineered for fast timing, enabling high-frequency operation through low minimum on-time and short propagation delays, which can help designers reduce circuit footprint. An ultra-fast wake-up time is also intended to improve burst-mode operation and support higher efficiency at light loads.
MasterGaN6 integrates protections including cross-conduction prevention, thermal shutdown and under-voltage lockout, supporting simplified layouts, smaller PCB designs and a lower bill of materials. The device is rated to handle up to 10 A and is aimed at consumer and industrial applications such as chargers, adapters, lighting power supplies and DC-to-AC solar micro-inverters. Its half-bridge configuration is positioned for multiple topologies, including active-clamp flyback (ACF), resonant LLC, inverse buck converters and power factor correction (PFC) circuits.
To support evaluation and design-in, ST has released the EVLMG6 evaluation board and added a MasterGaN6 model to the eDesignSuite PCB Thermal Simulator.
Original – STMicroelectronics
