Navitas Semiconductor introduced a 10 kW DC-DC reference platform designed to accelerate the shift toward high-voltage DC (HVDC) power architectures in AI data centers. The company said the platform reaches up to 98.5% peak efficiency at 1 MHz switching frequency, enabling higher power density for large-scale data center expansion.
The all-GaN design uses advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge topology with synchronous rectification. In a full-brick form factor (61 × 116 × 11 mm), Navitas reports 98.5% peak efficiency and 98.1% full-load efficiency, delivering 2.1 kW/in³ power density.
Navitas positions the platform as production-oriented and compatible with both 800 V–to–50 V and ±400 V–to–50 V architectures at 10 kW. It integrates auxiliary power and control functions to simplify adoption and support compact, high-power-density module designs for next-generation HVDC AI data centers.
“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”
The 10 kW DC-DC platform is currently being evaluated with key data center customers through collaborative development and is scheduled to debut publicly at APEC in San Antonio, Texas, March 22–26, at the Navitas booth (#2027).
Original – Navitas Semiconductor