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Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
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onsemi reported fourth quarter revenue of $1,530 million, alongside strong cash generation and continued investment in intelligent power and sensing technologies.
For the fourth quarter, GAAP gross margin was 36.0%, with non-GAAP gross margin at 38.2%. GAAP operating margin came in at 13.1%, while non-GAAP operating margin reached 19.8%. GAAP diluted earnings per share were $0.45, compared with non-GAAP diluted EPS of $0.64.
For full-year 2025, onsemi generated $1.8 billion in cash from operations and $1.4 billion in free cash flow, achieving a record free cash flow margin of 24%.
“We remained disciplined in our execution and met expectations in the fourth quarter as we saw increasing signs of stabilization in our key markets,” said Hassane El-Khoury, President and CEO of onsemi. “We continue to invest in intelligent power and sensing technologies that position us to win in the most critical technology transitions shaping our industry. Our strategy is clear: lead in automotive, industrial, and AI data center power with innovation that delivers higher-value solutions for our customers and long-term returns for our shareholders.”
Thad Trent, EVP and CFO of onsemi, added that the company returned 100% of its annual free cash flow to shareholders through share repurchases in 2025. He noted that with major investment cycles largely complete and new technologies ramping, the company is focused on cost structure improvements, operational excellence and margin expansion as market conditions recover.
During the quarter, onsemi authorized a new share repurchase program of up to $6 billion over the next three years. The company also introduced vertical gallium nitride (vGaN) power semiconductors, targeting higher power density, improved efficiency and enhanced ruggedness.
In addition, onsemi signed a memorandum of understanding with Innoscience to explore expanded production of GaN power devices using Innoscience’s 200 mm GaN-on-silicon process. The company further strengthened its GaN roadmap by establishing a collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation GaN power devices, beginning with 650 V products.
Original – onsemi
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Navitas Semiconductor introduced a 10 kW DC-DC reference platform designed to accelerate the shift toward high-voltage DC (HVDC) power architectures in AI data centers. The company said the platform reaches up to 98.5% peak efficiency at 1 MHz switching frequency, enabling higher power density for large-scale data center expansion.
The all-GaN design uses advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge topology with synchronous rectification. In a full-brick form factor (61 × 116 × 11 mm), Navitas reports 98.5% peak efficiency and 98.1% full-load efficiency, delivering 2.1 kW/in³ power density.
Navitas positions the platform as production-oriented and compatible with both 800 V–to–50 V and ±400 V–to–50 V architectures at 10 kW. It integrates auxiliary power and control functions to simplify adoption and support compact, high-power-density module designs for next-generation HVDC AI data centers.
“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”
The 10 kW DC-DC platform is currently being evaluated with key data center customers through collaborative development and is scheduled to debut publicly at APEC in San Antonio, Texas, March 22–26, at the Navitas booth (#2027).
Original – Navitas Semiconductor
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STMicroelectronics announced an expanded strategic collaboration with Amazon Web Services (AWS) through a multi-year, multi-billion USD commercial engagement spanning several product categories. The agreement positions ST as a strategic supplier of semiconductor technologies and products that AWS will integrate into its compute infrastructure to support new high-performance compute instances, lower operational costs, and improved scalability for compute-intensive workloads, including AI and cloud applications.
Under the commercial arrangement, AWS will leverage a broad set of ST proprietary technologies. ST will supply solutions across high-bandwidth connectivity and high-performance mixed-signal processing, microcontrollers for intelligent infrastructure management, and analog and power ICs designed to improve energy efficiency in hyperscale data center operations. The collaboration is intended to help customers reduce total cost of ownership and accelerate time-to-market by addressing increasing requirements for compute performance, efficiency, and data throughput.
“This strategic engagement establishes ST as an important supplier to AWS and validates the strength of our innovation, proprietary technology portfolio, and proven manufacturing-at-scale capabilities,” said Jean-Marc Chery, President and CEO of STMicroelectronics. “Our advanced semiconductor solutions will directly power AWS’s next-generation infrastructure, enabling their customers to push the boundaries of AI, high-performance computing, and digital connectivity.”
As part of the expanded relationship, ST will also work with AWS to optimize electronic design automation (EDA) workloads in the cloud. AWS’s scalable compute capabilities are expected to help accelerate silicon design by enabling parallelized workloads and greater flexibility to match dynamic compute needs.
ST also issued warrants to AWS for the acquisition of up to 24.8 million ordinary shares of ST. The warrants will vest in tranches over the term of the agreement, with vesting substantially tied to payments for ST products and services purchased by AWS and its affiliates. AWS may exercise the warrants over a seven-year period from the issue date at an initial exercise price of $28.38.
Original – STMicroelectronics
