Toshiba Electronic Devices & Storage Corporation has released the TK057V60Z1, a 600V N-channel silicon power MOSFET built using the DTMOSVI super junction process. The device is intended for use in power supply applications including data center servers, industrial switched-mode power supplies, and photovoltaic power conditioners.
The TK057V60Z1 features a typical drain-source on-resistance (RDS(on)) of 0.047Ω, the lowest among Toshiba’s 600V MOSFETs in the DFN8×8 surface-mount package. Compared to the previous TK31V60X model, it offers approximately 40% lower RDS(on) and a 32% reduction in gate-drain charge (Qgd), contributing to lower conduction and switching losses while maintaining similar total gate charge (Qg).
The compact DFN8×8 package supports higher power density designs. Toshiba provides SPICE models (G0 and G2) for circuit simulation, as well as an online simulator to assist in power circuit development.
The new MOSFET is part of Toshiba’s ongoing DTMOSVI series expansion aimed at improving efficiency in industrial power systems.
Original – Toshiba