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Fagor Electrónica, in collaboration with MONDRAGON Ventures, has announced an investment in Semi Zabala, a company specializing in the development of Gallium Nitride (GaN) HEMT transistors. The move reflects an ongoing focus on innovation and strategic diversification in the semiconductor sector.
This investment aligns with efforts to enhance access to next-generation GaN-based power technologies and supports the expansion of semiconductor capabilities in sectors such as aerospace and industrial power electronics.
Semi Zabala, currently progressing with its “Beyond The Power” industrial initiative, recently inaugurated a facility in Zubieta dedicated to the manufacturing and testing of power semiconductors. The new site is positioned to contribute to the regional semiconductor value chain and further establish Euskadi as a center for microelectronics development.
The collaboration reinforces regional industry cooperation and supports the advancement of wide-bandgap semiconductor technologies in emerging and high-performance applications.
Original – Fagor Electrónica
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Toshiba Electronic Devices & Storage Corporation has released the TK057V60Z1, a 600V N-channel silicon power MOSFET built using the DTMOSVI super junction process. The device is intended for use in power supply applications including data center servers, industrial switched-mode power supplies, and photovoltaic power conditioners.
The TK057V60Z1 features a typical drain-source on-resistance (RDS(on)) of 0.047Ω, the lowest among Toshiba’s 600V MOSFETs in the DFN8×8 surface-mount package. Compared to the previous TK31V60X model, it offers approximately 40% lower RDS(on) and a 32% reduction in gate-drain charge (Qgd), contributing to lower conduction and switching losses while maintaining similar total gate charge (Qg).
The compact DFN8×8 package supports higher power density designs. Toshiba provides SPICE models (G0 and G2) for circuit simulation, as well as an online simulator to assist in power circuit development.
The new MOSFET is part of Toshiba’s ongoing DTMOSVI series expansion aimed at improving efficiency in industrial power systems.
Original – Toshiba
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Infineon Technologies AG has expanded its cooperation with Anker to develop a high-speed, compact charger capable of delivering up to 160 watts of power. The project resulted in the release of a charger that combines compact design with high power density, incorporating Infineon’s digital controller and gallium nitride (GaN) technology.
The charger utilizes Infineon’s XDP™ XDPS2221E hybrid-flyback digital controller and CoolGaN™ transistors to support high-frequency, high-efficiency power conversion. Key design features include the integration of power factor correction (PFC) and hybrid-flyback stages to optimize performance and reduce component size. The charger provides up to 140 watts from individual USB-C ports, with dynamic allocation of 160 watts across multiple devices.
Infineon’s system-level approach includes the use of integrated GaN driver-transistor combinations and dual-transistor packages, allowing for improved thermal performance and reduced board space. The overall design minimizes peripheral components and supports cost-effective system layouts.
The collaboration is supported by an innovation center in Shenzhen, established by both companies to focus on efficient power solutions and fast-charging system development.
The new charger will be featured during CES 2026 in Las Vegas.
Original – Infineon Technologies
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Navitas Semiconductor and WT Microelectronics have expanded their strategic collaboration to strengthen technical support and regional supply chain capabilities for Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices across Asia.
As part of this updated agreement, Navitas has consolidated its distributor network, appointing WT Microelectronics as a key partner to lead customer engagement and design-in support. The partnership is aimed at improving service quality, streamlining logistics, and ensuring reliable product delivery to meet increasing demand in high-growth markets such as AI data centers, energy infrastructure, and industrial electrification.
WT Microelectronics will allocate additional technical and commercial resources to support this initiative, helping facilitate the integration of Navitas’ high-voltage and high-power components into critical systems across the region.
The enhanced collaboration aligns with Navitas’ broader strategic plans to scale its operations and improve customer responsiveness in core application sectors.
Original – Navitas Semiconductor
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Nexperia B.V. issued the open letter following repeated efforts to re-establish direct communication with its affiliated entities in China, aimed at restoring the regular supply of goods and ensuring continuity for customers and partners worldwide.
Despite multiple formal and informal outreach attempts—including direct calls, emails, meeting proposals, and official correspondence—Nexperia has not received a meaningful response. These continued disruptions to communication and cooperation have prompted this public appeal to underscore the urgency of the situation.
Nexperia emphasizes the importance of restoring stable and transparent supply chain operations, particularly as customers across sectors report production delays and potential stoppages.
Efforts by Chinese authorities to facilitate the resumption of exports from local facilities and subcontractors are acknowledged. However, without structured cooperation from Nexperia’s China-based entities, operational uncertainties remain.
To that end, Nexperia B.V. calls for the following:
- Immediate re-engagement in structured negotiations to re-establish predictable supply flows, including production planning, delivery timelines, and operational governance.
- Alignment with established corporate governance frameworks and intercompany agreements, including adherence to lawful directives issued by Nexperia B.V.’s global management.
To avoid further disruptions and reliance on public communication channels, Nexperia reiterates its willingness to engage in direct dialogue—either through conventional channels or a neutral third-party mediator.
A timely and constructive response is requested in the interest of all parties involved.
Original – Nexperia
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ROHM has introduced the RS7P200BM, a 100V N-channel power MOSFET in a compact DFN5060-8S (5.0mm × 6.0mm) package. Designed for hot-swap applications and battery protection in 48V systems, the device is suitable for AI server power circuits and industrial equipment requiring efficient power management.
Key Specifications:
- Drain-Source Voltage (VDS): 100 V
- On-Resistance (RDS(on)): 4.0 mΩ (VGS = 10 V, ID = 50 A, Ta = 25°C)
- Safe Operating Area (SOA):
- 7.5 A @ 10 ms pulse width (VDS = 48 V)
- 25 A @ 1 ms pulse width (VDS = 48 V)
- Package: DFN5060-8S (5.0mm × 6.0mm)
The RS7P200BM is engineered to handle inrush currents and transient overload conditions in 48V hot-swap environments. Its wide SOA and low RDS(on) provide thermal and electrical efficiency for compact, high-density server designs.
Applications:
- 48V hot-swap circuits in AI servers and data centers
- Battery-powered industrial systems such as AGVs and forklifts
- UPS and backup power systems
- Robotics, fan motors, and power tools in 48V industrial domains
This release supports the industry’s trend toward 48V systems, aiming to improve power density, energy efficiency, and thermal performance in power electronics.
Original – ROHM
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Littelfuse has introduced the MMIX1T500N20X4, a 200V N-channel ultra-junction power MOSFET designed for high-current applications requiring low conduction losses and improved thermal performance.
Key Specifications:
- Blocking Voltage: 200 V
- Drain Current (ID): 480 A
- On-Resistance (RDS(on)): 1.99 mΩ
- Gate Charge (Qg): 535 nC
- Thermal Resistance (Rth(j-c)): 0.14 °C/W
- Isolation Voltage: 2500 VRMS
The device is housed in a ceramic-based, isolated SMPD-X package with topside cooling, which supports simplified thermal management and higher power density. Compared to other X4-Class MOSFETs, the MMIX1T500N20X4 offers significantly lower RDS(on) and higher current capability, allowing for consolidation of paralleled MOSFETs in system designs.
Target Applications:
- DC load switching
- Battery energy storage systems
- Industrial power supplies and process control
- Charging infrastructure
- Power electronics for drones and VTOL platforms
This MOSFET is suitable for systems requiring compact, high-efficiency, and high-reliability solutions in medium-voltage ranges.
Original – Littelfuse
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Innoscience and Allegro MicroSystems have announced a collaborative 4.2kW all-GaN power reference design aimed at meeting the efficiency and density demands of next-generation AI data centers and edge computing platforms.
The solution integrates Innoscience’s proprietary GaN power transistors with Allegro’s AHV85110 isolated gate driver, known for its integrated bias supply and self-powered architecture. This combination enables Titanium-grade efficiency and power densities exceeding 100 W/in³, addressing both performance and compactness requirements in high-power computing environments.
The reference design leverages a fully GaN-based architecture optimized for fast switching and low electromagnetic interference (EMI). The AHV85110 driver’s low common-mode capacitance and integrated power supply contribute to simplified system design, reducing passive component count on the driver board by up to 80% and enabling a 15% reduction in total system components.
This collaboration underscores the growing role of GaN in AI and hyperscale infrastructure, offering benefits in thermal design, board layout, and system integration. With this solution, engineers gain a ready-to-use platform that supports the development of compact, high-efficiency power conversion systems suitable for evolving compute-intensive applications.
The 4.2kW reference design is now available from Innoscience and provides a robust foundation for accelerating development in high-performance power electronics.
Original – Innoscience Technology
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STMicroelectronics has launched a new family of integrated GaN-based smart power components aimed at improving efficiency, performance, and form factor in motor drive applications across consumer and industrial markets.
The new GaNSPIN system-in-package platform integrates high-voltage GaN transistors and gate drivers, delivering the benefits of wide-bandgap technology to motorized systems such as household appliances, power tools, and industrial equipment. This innovation allows manufacturers to reduce power losses, lower system costs, and design more compact modules.
The initial devices—GANSPIN611 and GANSPIN612—are designed for applications up to 400 W, such as compressors, pumps, and fans. Key features include:
- Integrated 650V GaN half-bridge and driver in a compact 9mm x 9mm QFN package
- Low RDS(on) (138mΩ for GANSPIN611, 270mΩ for GANSPIN612) to minimize conduction losses
- Optimized switching control to manage EMI and stress on motor windings
- Adjustable slew rates for system-level tuning
- Comprehensive protections, including UVLO, OVP, OCP, thermal shutdown, and interlocking
- Integrated bootstrap diode for simplified high-side drive
- Built-in standby function to support energy-saving modes
The GaNSPIN platform supports both 110V and 230V AC input systems, targeting universal appliance compatibility. By enabling heatsink-free operation in many cases, the devices help reduce board size by up to 60% and lower the bill of materials—key considerations in both cost-sensitive and space-constrained designs.
These latest GaN-based ICs from ST extend the benefits of wide-bandgap technology beyond power adapters and chargers, bringing new levels of efficiency and integration to motion control systems in a broad range of applications.
Original – STMicroelectronics
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Analog Devices, Inc. announced its financial results for the fourth quarter and full fiscal year ended November 1, 2025, highlighting consistent growth across key end markets and strong shareholder returns.
For the fourth quarter of fiscal 2025, Analog Devices reported revenue of $3.08 billion, reflecting year-over-year growth across all major end markets, led by Communications and Industrial segments. Fiscal 2025 revenue reached $11.0 billion, representing a 17% increase compared to the prior year.
The company generated operating cash flow of $4.8 billion and free cash flow of $4.3 billion, accounting for 44% and 39% of total revenue, respectively. Analog Devices returned 96% of its fiscal 2025 free cash flow to shareholders, including $2.2 billion through share repurchases and $1.9 billion in dividend payments.
Vincent Roche, CEO and Chair of Analog Devices, stated, “Our strong fourth quarter concluded a year of robust growth, driven by both cyclical tailwinds and our differentiated market position. These results reflect the strength of our business model, as well as our unwavering focus on delivering high-performance technologies that solve complex challenges for our customers. This has built deep customer trust and a rapidly expanding design pipeline, reinforcing our confidence in delivering long-term value.”
Richard Puccio, Chief Financial Officer, added, “We saw healthy booking trends continue through the fourth quarter, with particular strength in our Communications market and steady growth in Industrial. While macroeconomic uncertainty may influence the near-term landscape, we are well positioned to benefit from both cyclical recovery and long-term secular growth trends.”
Analog Devices expects first-quarter fiscal 2026 revenue of approximately $3.1 billion, plus or minus $100 million. At the midpoint of this outlook, the company anticipates a reported operating margin of 31.0% (±130 basis points) and an adjusted operating margin of 43.5% (±100 basis points). Reported earnings per share (EPS) are projected at $1.60 (±$0.10), with adjusted EPS expected at $2.29 (±$0.10).
Analog Devices’ Board of Directors has declared a quarterly cash dividend of $0.99 per share. The dividend will be payable on December 22, 2025, to shareholders of record as of the close of business on December 8, 2025.
All non-GAAP financial measures mentioned are reconciled to the most directly comparable GAAP measures in the company’s financial tables and filings.
Original – Analog Devices
