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Toshiba Electronic Devices & Storage Corporation has released the TK057V60Z1, a 600V N-channel silicon power MOSFET built using the DTMOSVI super junction process. The device is intended for use in power supply applications including data center servers, industrial switched-mode power supplies, and photovoltaic power conditioners.
The TK057V60Z1 features a typical drain-source on-resistance (RDS(on)) of 0.047Ω, the lowest among Toshiba’s 600V MOSFETs in the DFN8×8 surface-mount package. Compared to the previous TK31V60X model, it offers approximately 40% lower RDS(on) and a 32% reduction in gate-drain charge (Qgd), contributing to lower conduction and switching losses while maintaining similar total gate charge (Qg).
The compact DFN8×8 package supports higher power density designs. Toshiba provides SPICE models (G0 and G2) for circuit simulation, as well as an online simulator to assist in power circuit development.
The new MOSFET is part of Toshiba’s ongoing DTMOSVI series expansion aimed at improving efficiency in industrial power systems.
Original – Toshiba
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Infineon Technologies AG has expanded its cooperation with Anker to develop a high-speed, compact charger capable of delivering up to 160 watts of power. The project resulted in the release of a charger that combines compact design with high power density, incorporating Infineon’s digital controller and gallium nitride (GaN) technology.
The charger utilizes Infineon’s XDP™ XDPS2221E hybrid-flyback digital controller and CoolGaN™ transistors to support high-frequency, high-efficiency power conversion. Key design features include the integration of power factor correction (PFC) and hybrid-flyback stages to optimize performance and reduce component size. The charger provides up to 140 watts from individual USB-C ports, with dynamic allocation of 160 watts across multiple devices.
Infineon’s system-level approach includes the use of integrated GaN driver-transistor combinations and dual-transistor packages, allowing for improved thermal performance and reduced board space. The overall design minimizes peripheral components and supports cost-effective system layouts.
The collaboration is supported by an innovation center in Shenzhen, established by both companies to focus on efficient power solutions and fast-charging system development.
The new charger will be featured during CES 2026 in Las Vegas.
Original – Infineon Technologies
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Navitas Semiconductor and WT Microelectronics have expanded their strategic collaboration to strengthen technical support and regional supply chain capabilities for Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices across Asia.
As part of this updated agreement, Navitas has consolidated its distributor network, appointing WT Microelectronics as a key partner to lead customer engagement and design-in support. The partnership is aimed at improving service quality, streamlining logistics, and ensuring reliable product delivery to meet increasing demand in high-growth markets such as AI data centers, energy infrastructure, and industrial electrification.
WT Microelectronics will allocate additional technical and commercial resources to support this initiative, helping facilitate the integration of Navitas’ high-voltage and high-power components into critical systems across the region.
The enhanced collaboration aligns with Navitas’ broader strategic plans to scale its operations and improve customer responsiveness in core application sectors.
Original – Navitas Semiconductor
