NoMIS Power Corporation has officially launched its first 3.3 kV SiC MOSFET — the NoMIS N3PT080MP330. This new planar device features an exceptionally low on-resistance of 80 mΩ (34 A) and delivers best-in-class figures of merit, marking a major step forward in medium-voltage power conversion.

Designed for high-efficiency, high-reliability systems, the N3PT080MP330 enables a new class of performance in applications such as battery energy storage systems (BESS), renewable energy inverters, industrial motor drives, and transportation electrification. The device provides an attractive upgrade path for customers moving from traditional silicon-based IGBTs, offering significant advantages including:

  • Lower switching losses
  • Higher power density
  • Superior thermal performance
  • Enhanced ruggedness at high voltage and temperature

The N3PT080MP330 is part of a broader medium-voltage SiC strategy from NoMIS. It is supported by a complementary 160 mΩ SiC bi-directional switch, allowing designers to match performance to specific application needs. The company also revealed its upcoming roadmap, which includes:

  • A 50 mΩ (55 A) SiC MOSFET launching later in 2025
  • A 25 mΩ (109 A) SiC MOSFET targeted for release in 2026

These devices aim to set new benchmarks in efficiency and thermal performance across the 3.3 kV voltage class.

Samples of the N3PT080MP330 are now available in bare die (threshold voltage binned) and discrete package formats via DigiKey. NoMIS also offers custom design services and technology licensing at the 3.3 kV node for OEMs seeking application-specific solutions.

Powered by NoMIS’ proprietary planar SiC MOSFET architecture, the N3PT080MP330 offers several innovations:

  • High-temperature efficiency: Maintains low and stable conduction/switching losses up to 175°C, outperforming Si IGBTs which typically see doubled switching losses across that range.
  • Gate drive flexibility: Operates reliably at both +18 V and +20 V, making it a seamless drop-in replacement for IGBT-based systems — no anti-parallel diode required.
  • Enhanced reliability: A thicker gate oxide improves long-term durability, lowers input capacitance, and supports faster high-frequency switching.
  • Industry-leading performance metrics: Including ultra-low [Ron * Coss] and [Ron * Crss] for high-speed, high-efficiency switching.

“The 3.3 kV market has been waiting for a SiC MOSFET that truly delivers medium-voltage capability with the ruggedness, efficiency, and design adaptability our planar platform offers,” said Adam Morgan, Co-Founder and CEO of NoMIS Power. “With the N3PT080MP330, engineers can finally achieve higher performance and power density in even the most demanding environments.”

NoMIS’ 3.3 kV SiC technology is poised to reshape key sectors where high efficiency and high reliability are essential:

Energy & Infrastructure

  • Battery Energy Storage Systems (BESS)
  • High-power solar inverters
  • DC solid-state circuit breakers (SSCBs)

Transportation & Marine

  • Railway traction systems
  • Heavy-duty EVs (buses, trucks)
  • Agricultural & construction equipment
  • Marine propulsion and port-side electrification

Charging & Industrial Systems

  • Ultra-fast EV charging stations
  • High-performance industrial motor drives

The N3PT080MP330 leverages NoMIS Power’s proven 1.2 kV planar SiC MOSFET platform, ensuring a reliable transition to 3.3 kV without compromising process maturity or supply chain readiness. This scalable foundation supports NoMIS’ vision to deliver high-performance SiC solutions across a wide voltage spectrum.

Original – NoMIS Power