-
Infineon Technologies AG has expanded its CoolSiC™ MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT package as well as the TO-247-3 and TO-247-4 packages. In addition, three new products in the TOLL package have been introduced, with rated voltages of 440 V (continuous) and 455 V (transient).
The new CoolSiC MOSFETs deliver improved thermal performance, system efficiency, and power density. They have been specifically designed to meet the requirements of high-power and compute-intensive applications, including AI server power supplies, solar inverters, uninterruptible power supplies, Class D audio amplifiers, motor drives, and solid-state circuit breakers. For these critical systems, the devices provide the required reliability and performance.
Compared to existing Si technologies in the 250 V and 300 V voltage classes, CoolSiC G2 400 V and 440 V MOSFETs achieve up to 50 percent lower conduction losses at an operating temperature of 120 °C, thanks to their flat R(DS(on) as a function of junction temperature (Tj). They also feature significantly improved switching figures of merit, resulting in at least five times lower reverse recovery charge.At the system level, CoolSiC G2 400 V and 440 V MOSFETs in a three-stage flying-capacitor CCM totem-pole PFC achieved up to 0.4 percentage points higher peak PSU efficiency compared to a state-of-the-art interleaved two-level CCM totem-pole PFC. This translates into approximately 15 percent lower system losses at peak efficiency.
Original – Infineon Technologies
-
Nexperia introduced the latest additions to its ever-expanding portfolio of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors.
When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest VGS(th) will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications.
This expensive and time-consuming approach often requires additional testing but still cannot provide guarantees on how devices will behave at higher load currents (tens of Amps). An alternative approach is to request tightly matched devices from a supplier, but this can further raise the cost of an end application.
The features of Nexperia’s PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs eliminate the need for designers to adopt either of these approaches by providing enhanced dynamic current sharing. These switches offer a 50% lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a VGS(th) window that is up to 50% lower (0.6 V min-to-max). This benefit, combined with the low RDS(on) of 1.9 mΩ or 2.3 mΩ helps to provide high efficiency in power switching applications.
The new ASFET devices are available in the rugged, space-efficient 8 mm x 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.
Original – Nexperia
-
Wolfspeed, Inc. has successfully completed its financial restructuring process, emerging from Chapter 11 protection with a significantly strengthened financial position and a refreshed Board of Directors.
Through the restructuring, Wolfspeed reduced its total debt by approximately 70%, extended maturities to 2030, and lowered its annual cash interest expense by roughly 60%. The company emphasized that it now has ample liquidity and a self-funded business plan supported by free cash flow generation. With its vertically integrated 200mm U.S.-based SiC manufacturing footprint, Wolfspeed is well positioned to drive growth in high-demand markets such as AI, electric vehicles, renewable energy, and industrial applications.
“This marks the beginning of a new era for Wolfspeed,” said Robert Feurle, CEO of Wolfspeed. “We enter this phase with improved financial stability, a scaled 200mm facility footprint, and the strong foundation needed to capture rising demand across rapidly growing end markets.”
As part of its emergence, Wolfspeed announced significant Board changes. Anthony M. Abate has been appointed Chairman, succeeding Tom Werner. Abate brings decades of leadership across technology, telecom, and investment sectors. He is joined by new Board members Mike Bokan, Eric Musser, Hong Q. Hou, and, pending regulatory approval, Aris Bolisay. They add extensive expertise spanning semiconductors, global sales, operational leadership, and financial strategy.
The appointments come as several directors, including Werner, Glenda Dorchak, John Hodge, Darren Jackson, Duy-Loan Le, Stacy Smith, and Marvin Riley, stepped down from the Board.
Feurle expressed gratitude to outgoing members: “Their leadership and input were vital as we navigated our financial restructuring. We now welcome new directors whose experience will help guide Wolfspeed as we strengthen our position in the global SiC market.”
With a cleaner balance sheet, reduced financial burden, and a reconstituted leadership team, Wolfspeed is positioning itself to scale operations, meet rising customer demand, and remain at the forefront of the silicon carbide power semiconductor industry.
Original – Wolfspeed
-
The rapid growth of power-hungry applications across various industries is placing unprecedented demands on power electronics in terms of power density, efficiency and reliability. Discrete power MOSFETs play a pivotal role in that context. An application-optimized approach opens new possibilities to further improve already highly advanced MOSFET technologies.
Leveraging this use-case centric approach, Infineon Technologies AG has launched the OptiMOS™ 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Designed to provide the best fitting solution in their respective use case, the new OptiMOS 7 family offers products specifically for high performance switching, motor-drives, or RDS(ON)-focused applications.
OptiMOS 7 25 V: Optimized for Switching Applications
The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies (SMPS) in telecommunications and traditional server applications. The portfolio includes two technology variants: devices optimized for hard-switching and soft-switching topologies. The hard-switching optimized devices feature an excellent Miller ratio, FOMs, and RDS(ON)10, while the soft-switching optimized products deliver ultra-low RDS(ON)45 and FOMQg. Compared to the OptiMOS™ 5 25 V, the new generation achieves up to 20 percent lower RDS(ON) and up to 25 percent better FOMs, depending on the optimization type.
OptiMOS 7 40 V: Optimized for Motor Drives
The OptiMOS 7 40 V MOSFETs, designed for motor-drive applications, deliver lower RDS(on), optimized gate characteristics, enhanced noise immunity, and a threefold wider safe operating area (SOA) compared to the previous generation. Their lower transconductance improves current distribution, reducing voltage overshoot, and boosts performance under harsh operating conditions. These devices are ideal for motor drives, power tools, and gardening applications, offering maximum reliability, efficiency, and power density.
Original – Infineon Technologies
-
Infineon Technologies AG and ROHM Co., Ltd. have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers.
Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.
“We are excited about working with ROHM to further accelerate the establishment of SiC power switches,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. “Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization.”
“ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions,” said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. “By working together, we can drive innovation, reduce complexity and increase customer satisfaction, ultimately shaping the future of the power electronics industry.”
As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.
At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.
Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.
Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using Infineon’s and ROHM’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.
Original – Infineon Technologies
-
Toshiba Electronic Devices & Storage Corporation has launched “TPH2R70AR5,” a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba’s latest-generation process. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in data centers and communications base stations.
The 100V U-MOS11-H series improves on the drain-source On-resistance (RDS(ON)), total gate charge (Qg) and the trade-off between them (RDS(ON)×Qg) delivered by Toshiba’s existing generation process, the U-MOSX-H series, reducing both conduction and switching power losses.
TPH2R70AR5 offers approximately 8% lower RDS(ON) and 37% lower Qg against TPH3R10AQM, a U-MOSX-H series product, plus a 42% improvement in RDS(ON)×Qg. It also achieves high-speed body diode performance through the application of lifetime control technology, which reduces reverse recovery charge (Qrr) and suppresses spike voltage.
Qrr is improved by approximately 38% and the RDS(ON)×Qrr is also improved by approximately 43%. These industry-leading trade-off characteristics, both RDS(ON)×Qg and RDS(ON)×Qrr, minimize power loss, contributing to higher efficiency and power density in power supply systems. It also adopts the SOP Advance(N) package and offers excellent mounting compatibility with industry standards.
Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time; and highly accurate G2 SPICE model that accurately reproduces transient characteristics. All are now available.
Toshiba will continue to expand its lineup of low-loss MOSFETs that enable more efficient power supplies and contribute to lower equipment power consumption.
Original – Toshiba
-
onsemi announced that it has entered into an agreement with Aura Semiconductor to acquire rights to its Vcore power technologies including associated intellectual property (IP) licenses. This strategic deal will enhance onsemi’s power management portfolio and roadmap, accelerating the company’s vision to address the complete power tree in AI data center applications, from grid to core.
“This acquisition underscores our commitment to solving the energy and efficiency demands of tomorrow’s AI data centers by offering a full range of differentiated intelligent power solutions,” said Sudhir Gopalswamy, group president of the Intelligent Sensing and Analog and Mixed-Signal Group, onsemi. “Integrating these technologies into our broader power management portfolio will enable us to deliver solutions with superior power density, efficiency and thermals and enable more compute capacity per rack.”
With decades of innovation in silicon and silicon carbide (SiC) technologies, onsemi offers industry leading solutions for solid state transformers, power supply units, 800 VDC distribution, and core power delivery. With the integration of these technologies, onsemi will be one of the few companies capable of meeting the stringent power requirements of modern AI infrastructure with scalable, practical designs.
onsemi expects that this transaction will have minimal impact to its GAAP and non-GAAP earnings per share in the first fiscal year following close and accretive thereafter. The transaction is expected to close in the fourth quarter of 2025, subject to customary closing conditions. The above descriptions of the agreement and acquisition are not exhaustive and are qualified by the related information disclosed in the Current Report on Form 8-K that onsemi files with the Securities and Exchange Commission (the “SEC”).
Original – onsemi
-
Infineon Technologies AG provides CoolGaN™ power transistors to Universal Microelectronics Co., Ltd. (UMEC) for the company’s new 250 W adapter for networking Power over Ethernet (PoE) applications. Infineon´s CoolGaN transistors enable reliable, high-performance solutions and help UMEC develop safer and energy-efficient technology to address modern power system challenges. These solutions are ideal for power electronics across various industries, including telecommunications, industrial electronics, medical technology, and consumer electronics.
GaN-based power devices provide higher efficiency, reducing heat generation and energy consumption. They can operate at higher frequencies and power densities, enabling more compact designs, maximizing rack space utilization, and improving cooling in AI data centers, for example. Furthermore, reducing system size allows for more hardware content and improved air flow, which results in less wasted heat and ultimately decreases operational costs and the overall carbon footprint.
“We are excited to see our CoolGaN technology powering UMEC’s new 250 W adapter for networking applications. This collaboration demonstrates the potential of GaN to revolutionize the data center industry, enabling smaller, more efficient, and reliable power solutions,” says Johannes Schoiswohl, Head of GaN Business Line at Infineon.
“Partnering with Infineon and utilizing their CoolGaN power transistors in our new 250 W adapter has allowed us to create a product that delivers exceptional efficiency and reliability,” says Richard Lin, Power Supply Product Manager at Universal Microelectronics. “This innovation aligns with our commitment to developing cutting-edge electronic solutions that meet the evolving demands of the networking industry.”
UMEC’s 250 W adapter offers excellent efficiency of 95 percent, a power density increase of around 39 percent. The CoolGaN transistors reduce power losses, enable switching at frequencies above 200 kHz, and improve thermal behavior, which is critical for compact and high-density power supplies. These are critical performance improvements in the global virtual networking market, which is expected to grow from $48.6 billion in 2024 to approximately $200 billion by 2030, at a CAGR of 26.5 percent.
Infineon’s gallium nitride power transistors are driving digitalization and decarbonization, while enabling high-frequency operation, increasing efficiency, and reducing system size in a wide range of applications. They are available in voltage classes from 60 V to 700 V and in a broad variety of packages.Original – Infineon Technologies
-
Littelfuse, Inc. announced the release of the IX3407B, a single-channel, galvanically isolated gate driver designed to deliver high-speed switching performance and simplified system design in high-voltage power applications.
The IX3407B gate driver delivers up to 7 A peak source and sink output current through separate output pins and integrates Littelfuse’s proprietary 2.5 kV capacitive isolation technology for robust signal integrity and safety. It provides fast propagation delays, high Common Mode Transient Immunity (CMTI), and enhanced thermal stability, enabling efficient and reliable operation across a wide range of switching frequencies and temperatures.
“With the IX3407B, our customers can design safer, more compact, and more efficient power systems,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “The IX3407B will help companies accelerate their time to market while reducing total system cost in the growing markets of solar inverters, motor drives, industrial automation, and high-efficiency UPS systems.”
The IX3407B addresses the challenge of interfacing low-voltage logic with high-voltage power devices by providing galvanic isolation between control and driver stages without the need for bulky optocouplers or transformer-based isolation. This integration reduces board space, component count, and system complexity—while offering greater design flexibility and long-term reliability.
Key Features and Benefits
- 7 A typical peak source/sink current with separate output pins for precise gate control
- 2.5 kVrms capacitive isolation ensures robust electrical separation and fast signal transmission
- TTL/CMOS logic compatibility (3.3 V thresholds) with input voltage tolerance up to VCC
- Active Shutdown (ASD) and Under Voltage Lockout (UVLO) safeguard against fault conditions
- High CMTI rating of 150 kV/µs supports high-noise industrial environments
- Wide output supply range (13 V to 35 V) for flexibility across Si / SiC MOSFETs and IGBTs
Target Applications
The IX3407B is ideal for a wide range of industrial and renewable energy applications, including:
- AC and brushless DC motor drives
- Solar inverters and energy storage systems
- High-voltage DC/DC converters
- LLC and totem-pole PFC power stages
- Induction heating systems, welders, and uninterruptible power supplies (UPS)
- Building and factory automation systems
By replacing traditional optocoupler-based solutions, the IX3407B delivers superior performance, smaller footprint, and lower system cost, making it a compelling choice for engineers designing the next generation of high-efficiency power systems.
Original – Littelfuse
-
Infineon Technologies AG and Goldwind Science & Technology Co., Ltd. expand their collaboration, enabling a stable and reliable flow of electricity in wind power generation. Infineon will supply Goldwind with its XHP™ 2 1700 V IGBT5 power modules with .XT technology that will enhance energy efficiency in Goldwind’s grid-forming GW 155 – 4.5 MW wind turbines. Infineon’s power modules deliver high power density, reliability, and robustness, ensuring a long operational lifetime for wind energy systems. By optimizing energy efficiency, they help to reduce energy costs and enhance the profitability of Goldwind’s wind turbines.
Grid-forming wind turbines act as stabilizers within the energy grid. Unlike conventional turbines that passively follow the grid, the grid-forming technology allows wind farms to mimic the stabilizing properties of traditional rotating generators. By using power electronics, grid-forming wind turbines can generate a stable frequency and maintain grid voltage, even when the load in the power grid changes. The International Energy Agency estimates that renewables will account for almost half of global electricity generation by the end of the decade, with the share of wind and solar photovoltaics doubling to 30 percent. Grid-forming capabilities will therefore become essential to ensure a stable and reliable flow of electricity despite fluctuations in energy generation.
“The emergence of grid-forming wind turbines enables wind farms to evolve from simple power suppliers into stabilizing pillars of the energy grid.” said Ye Jiqiang, Vice President of the Wind Power Industry Group and General Manager of the Supply Chain Center at Goldwind. “We look forward to further deepening our long-term collaboration with Infineon, leveraging efficient and reliable cutting-edge technology to advance renewable energy systems.”
“Collaborating with Goldwind to support their grid-forming wind turbines underscores Infineon’s commitment to strengthening global energy systems and further advancing renewable energy integration,” said Dominik Bilo, Executive Vice President and Chief Sales Officer Industrial & Infrastructure at Infineon. “Together, Infineon and Goldwind are driving decarbonization by enhancing the reliability and efficiency of wind power generation.”
Infineon’s XHP 2 1700 V IGBT5 power modules use the .XT interconnection technology. This technology is characterized by improved wire bonding, reliable chip attachment, and high-reliability system-soldering, enabling power modules to support increased cycling loads at higher temperatures compared to standard joining technology. The power modules feature low stray inductance and a design well-suited for paralleling, simplifying development for customers and enabling greater flexibility for platform upgrades. They provide exceptional lifetime even under challenging operating conditions such as those in wind turbines. As a result, they minimize unplanned downtimes and maximize wind energy harvested. Today, Infineon products are used in every second newly installed wind turbine worldwide.
Infineon and Goldwind have been collaborating since 2007 to advance more compact, highly reliable, and grid-friendly wind power converters. Infineon has already supplied Goldwind with its fifth-generation PrimePACK™ IGBT modules. Thanks to their high power density and exceptional cycling performance, these solutions have enabled Goldwind’s 6 MW full-power wind turbine models to meet stringent global standards for reliability, energy efficiency, and safety, while reducing operational and maintenance costs.Original – Infineon Technologies
