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FRIEM S.p.A., a global leader in power conversion technologies, has announced the acquisition of a majority stake in Poseico S.p.A., a historic Italian company specializing in the design and manufacturing of power semiconductors.
This strategic move marks an important milestone in FRIEM Group’s growth and diversification journey, reinforcing its leadership in high current converters—particularly for industrial and hydrogen applications—while opening new opportunities in fast-growing sectors such as electric mobility, traction, research and nuclear, data centers, and critical power infrastructure.
By combining Poseico’s deep expertise in power semiconductors with FRIEM’s strength in power conversion, the Group is building a vertically integrated, innovation-driven value chain. This synergy enhances reliability, product quality, and service excellence, while supporting the increasing demand for efficiency and operational continuity in the context of the global energy transition.
“This acquisition is fully aligned with our long-term industrial vision,” said Lorenzo Carnelli, CEO of FRIEM. “The union between FRIEM and Poseico consolidates our position in high current converters and strengthens our presence in emerging sectors tied to decarbonization and digitalization. By combining our expertise, we look with confidence to expansion in high-potential, technology-intensive markets.”
Fabrizio Carnelli, CFO of FRIEM, who managed the transaction, highlighted the support of Fondo Italiano d’Investimento through FITEC – Fondo Italiano Tecnologia e Crescita – and thanked KPMG, Ughi e Nunziante law firm, Studio Russo De Rosa, and notary Giulio Montanaro for their assistance.
On the Poseico side, Filippo Vaccaro, CEO of Poseico, expressed pride in joining the FRIEM Group:
“This partnership brings together two Italian technology leaders committed to advancing reliable, sustainable solutions for industry and the global energy transition.”
As part of the agreement, Poseico will continue to operate its production and research activities at its Genoa facility, ensuring continuity and leveraging its team’s expertise within FRIEM’s broader industrial plan.
This acquisition reflects FRIEM’s strategy of combining organic growth with targeted strategic acquisitions, reinforcing its position as a key player in the decarbonization and digitalization of global power systems.
Original – FRIEM
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VisIC Technologies continues to push the boundaries of efficiency and performance in electric mobility and industrial power markets. With the introduction of its first-generation (Gen 1) D³GaN™ 650V devices, followed by Gen 1+, and now second-generation (Gen 2) products, VisIC has created a clear roadmap for achieving maximum energy efficiency through optimized RDS(ON) performance.
Gen 1 – Proven Efficiency
VisIC’s Gen 1 devices established the foundation for GaN adoption in automotive and industrial applications. With RDS(ON) values ranging from 22 mΩ to 8 mΩ, Gen 1 products delivered significant switching speed and efficiency over silicon-based solutions. These devices proved the superior potential of GaN for compact, high-power systems and were the first step toward mass-market adoption.
Gen 1+ – Optimized Performance
To meet growing market demands for higher efficiency, VisIC introduced Gen 1+ devices. By reducing RDS(ON) to as low as 6 mΩ, The 650V Gen 1+ improved conduction losses without compromising switching energy and enabled more power-dense, reliable designs. This generation bridged the gap between the early adoption of GaN and the high-volume needs of automotive OEMs, offering engineers an enhanced balance of efficiency, scalability, and manufacturability. With 98 mm.sq., the GaN bare dice V06DI065R1X13 is one of the biggest dies in the industry to deliver at 650V a current of 170A per device and which makes it ideal to be paralleled inside power modules and deliver power from 50 kW to 150 kW.Beyond automotive, such performance directly addresses the surging demand for efficient power delivery in AI-driven data center, where massive computing loads require compact, high-efficiency solutions. As a stand-alone GaN die, it provides the power density needed to meet the energy thirst of modern, AI-populated data center while reducing losses and optimizing thermal performance.
Gen 2 – Next-Level Efficiency
VisIC’s 650V Gen 2 devices represent a 33% shrink of die size compared to Gen 1+ and 50% to Gen 1 and is a major leap forward in performance. With RDS(ON) values as low as 4 mΩ, Gen 2 delivers unprecedented conduction efficiency, minimizing power losses and reducing system thermal stress. These D³GaN™ devices are engineered for next-generation EV inverters, on-board chargers, and high-performance power converters, enabling automakers to achieve higher driving ranges, smaller cooling systems, and overall lower system costs. The new high power bare dice V04DI065R2X21 650V/4mOhm can be soldered or sintered on AMB/DBC substrates to increase reliability and performance. With a current capability of 230A the device can be used to increase power density in power modules for EV drive train inverter.Lower RDS(ON) directly translates to higher system efficiency and reduced energy losses. Across its product roadmap, VisIC demonstrates its commitment to continuous improvement—ensuring that each generation of D³GaN™ devices provides measurable benefits in performance, power density, and total cost of ownership. Both products are today available as bare dice for customer evaluation. Single chip top side cooled TC package will be available before end of the year and VisIC is working on a half bridge power module with parallel dice which will come soon.
“From our first-generation devices to our latest Gen 2 GaN, VisIC has consistently focused on one clear goal: enabling the most efficient power electronics for electric vehicles and industrial applications,” said Tamara Baksht, CEO. “By reducing RDS(ON) with each new generation, we help our customers design systems that are not only more efficient but also more compact and cost-effective.”
Original – VisIC Technologies
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NoMIS Power Corporation has officially launched its first 3.3 kV SiC MOSFET — the NoMIS N3PT080MP330. This new planar device features an exceptionally low on-resistance of 80 mΩ (34 A) and delivers best-in-class figures of merit, marking a major step forward in medium-voltage power conversion.
Designed for high-efficiency, high-reliability systems, the N3PT080MP330 enables a new class of performance in applications such as battery energy storage systems (BESS), renewable energy inverters, industrial motor drives, and transportation electrification. The device provides an attractive upgrade path for customers moving from traditional silicon-based IGBTs, offering significant advantages including:
- Lower switching losses
- Higher power density
- Superior thermal performance
- Enhanced ruggedness at high voltage and temperature
The N3PT080MP330 is part of a broader medium-voltage SiC strategy from NoMIS. It is supported by a complementary 160 mΩ SiC bi-directional switch, allowing designers to match performance to specific application needs. The company also revealed its upcoming roadmap, which includes:
- A 50 mΩ (55 A) SiC MOSFET launching later in 2025
- A 25 mΩ (109 A) SiC MOSFET targeted for release in 2026
These devices aim to set new benchmarks in efficiency and thermal performance across the 3.3 kV voltage class.
Samples of the N3PT080MP330 are now available in bare die (threshold voltage binned) and discrete package formats via DigiKey. NoMIS also offers custom design services and technology licensing at the 3.3 kV node for OEMs seeking application-specific solutions.
Powered by NoMIS’ proprietary planar SiC MOSFET architecture, the N3PT080MP330 offers several innovations:
- High-temperature efficiency: Maintains low and stable conduction/switching losses up to 175°C, outperforming Si IGBTs which typically see doubled switching losses across that range.
- Gate drive flexibility: Operates reliably at both +18 V and +20 V, making it a seamless drop-in replacement for IGBT-based systems — no anti-parallel diode required.
- Enhanced reliability: A thicker gate oxide improves long-term durability, lowers input capacitance, and supports faster high-frequency switching.
- Industry-leading performance metrics: Including ultra-low [Ron * Coss] and [Ron * Crss] for high-speed, high-efficiency switching.
“The 3.3 kV market has been waiting for a SiC MOSFET that truly delivers medium-voltage capability with the ruggedness, efficiency, and design adaptability our planar platform offers,” said Adam Morgan, Co-Founder and CEO of NoMIS Power. “With the N3PT080MP330, engineers can finally achieve higher performance and power density in even the most demanding environments.”
NoMIS’ 3.3 kV SiC technology is poised to reshape key sectors where high efficiency and high reliability are essential:
Energy & Infrastructure
- Battery Energy Storage Systems (BESS)
- High-power solar inverters
- DC solid-state circuit breakers (SSCBs)
Transportation & Marine
- Railway traction systems
- Heavy-duty EVs (buses, trucks)
- Agricultural & construction equipment
- Marine propulsion and port-side electrification
Charging & Industrial Systems
- Ultra-fast EV charging stations
- High-performance industrial motor drives
The N3PT080MP330 leverages NoMIS Power’s proven 1.2 kV planar SiC MOSFET platform, ensuring a reliable transition to 3.3 kV without compromising process maturity or supply chain readiness. This scalable foundation supports NoMIS’ vision to deliver high-performance SiC solutions across a wide voltage spectrum.
Original – NoMIS Power
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NXP Semiconductors has unveiled plans to relocate its German headquarters in Hamburg, marking the beginning of a new chapter for the company in the city. After more than 100 years in Lokstedt, NXP will move to a new site on Tasköprüstraße in Hamburg-Bahrenfeld, with the planned move-in date set for early 2031.
The new campus will host more than 800 employees and serve as a hub for research, development, testing, and marketing across NXP’s automotive, industrial, and IoT businesses. It will also accommodate general management functions and several of NXP Hamburg’s key competence centers, including:
- System-on-Chip (SoC) Security
- Artificial Intelligence at the Edge
- System Innovation for Automation, Robotics, and Health
- TeraHertz Laboratory for Mobile Communication and Automotive Radar
Located close to Science City Hamburg, the new headquarters is designed to strengthen NXP’s engagement in the region’s high-tech ecosystem. The modern facility will combine timeless architecture with state-of-the-art sustainability features, while fostering interdisciplinary collaboration and a people-centric work environment.
The project is being developed by Hamburg-based real estate group Captiva, which is transforming the former wholesale market site into a modern corporate headquarters. AUG. PRIEN Projektentwicklung will construct the building and lease it to NXP, with CBRE GmbH advising NXP throughout the process.
Hamburg’s First Mayor, Dr. Peter Tschentscher, welcomed the move, emphasizing NXP’s role in advancing future technologies such as quantum computing and praising the company’s decision to base itself in Science City Bahrenfeld.
Lars Reger, CTO at NXP, highlighted the company’s vision for the new headquarters:
“This move follows our vision of a people-centric, inclusive workspace that fosters innovation and collaboration. It also expresses our commitment to supporting Hamburg’s development as a hub for future technologies and high-tech ecosystems across Europe.”
With this relocation, NXP is reinforcing its long-term commitment to Hamburg, ensuring its continued role as a driving force in Europe’s semiconductor and technology landscape.
Original – NXP
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Vincotech has introduced its new 1200V flowPIM E2, an integrated power module designed for applications up to 12 kW. Powered by Silicon Carbide (SiC) MOSFET technology, the module delivers higher efficiency, superior thermal performance, and long-term reliability for modern power systems.
The flowPIM E2 integrates both DC-DC and DC-AC conversion in a single, industry-standard package. This simplifies design and maximizes energy savings, making it an ideal solution for demanding sectors such as HVAC, air conditioning, industrial drives, and embedded drives.
Key Benefits of the 1200V flowPIM E2
- Superior thermal management – Operates at higher junction temperatures with reduced cooling needs
- Enhanced reliability – Built for long-term durability, even in tough operating environments
- Quiet operation – High-frequency switching minimizes acoustic noise for improved end-user comfort
With the introduction of the 1200V flowPIM E2, Vincotech continues to expand its portfolio of advanced power modules, offering innovative solutions that enable higher efficiency and performance across multiple industries.
Original – Vincotech
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Toshiba Electronic Devices & Storage Corporation has launched six products featuring the DTMOSⅥ 600V series N-channel power MOSFET chips, mounted in a four-pin TO-247-4L(X) package to reduce switching loss. These devices are suitable for servers in data centers, switched-mode power supplies for industrial equipment, and power conditioners for photovoltaic generators.
By optimizing the gate design and process, the DTMOSⅥ 600V series, which includes the new products, has reduced the value of drain-source On-resistance×gate-drain charge―the figure of merit for MOSFET performance―by approximately 52% compared to Toshiba’s existing DTMOSⅣ-H series products with the same drain-source voltage ratings.
The new products feature the four-pin TO-247-4L(X) package with a signal source terminal for gate drive. Compared to the three-pin TO-247 package, the TO-247-4L(X) package allows for Kelvin connection of the signal source terminal for gate drive, reducing the influence of the inductance of the source wire inside the package. This enhances high-speed switching performance and helps improve the high efficiency of uninterruptible power supplies (UPS), photovoltaic inverters, and more.
Toshiba also offers tools that support circuit design. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba will continue to expand the DTMOSⅥ 600V series lineup to enhance the efficiency of switched-mode power supplies for industrial equipment, aiming to achieve carbon neutrality.
Original – Toshiba
