Infineon Technologies has introduced the RIC70115, a radiation-hardened gallium nitride (GaN) high-electron mobility transistor (HEMT) gate driver designed for satellite and other high-reliability space applications. The new device supports both GaN and silicon (Si) MOSFETs, providing spacecraft power system designers with greater flexibility to develop high-efficiency power conversion architectures for next-generation space platforms.

As satellite constellations expand and New Space missions demand higher power density and efficiency, GaN power devices are increasingly replacing conventional silicon technologies. The RIC70115 is designed to facilitate this transition by supporting both low-side and high-side gate drive configurations while maintaining reliable operation across a wide range of supply voltages.

The RIC70115 incorporates several integrated functions aimed at simplifying power converter design and improving system robustness:

  • Independent Miller Clamp to prevent parasitic turn-on while maintaining fast switching performance
  • Truly Differential Input (TDI) architecture for high immunity to common-mode noise, electromagnetic interference (EMI), and radio frequency interference (RFI)
  • Integrated low-dropout (LDO) regulator generating a regulated 4.8 V gate-drive supply
  • Input voltage range of 4.75 V to 15 V, supporting both 5 V and 12 V power rails

These integrated features reduce external component count, simplify circuit design, and improve long-term reliability in high-cycle space power systems.

The RIC70115 is qualified to meet the requirements of MIL-PRF-38535 and is designed for operation in harsh radiation environments.

Key specifications include:

  • Operating temperature range: -55°C to +125°C
  • Total Ionizing Dose (TID): up to 100 krad (Si)
  • Single Event Effects (SEE) characterized up to a Linear Energy Transfer (LET) of 81.9 MeV·cm²/mg

These ratings make the device suitable for applications in low Earth orbit (LEO) as well as more demanding space missions.

The RIC70115 is intended for high-reliability space power systems, including:

  • Satellite power distribution
  • Spacecraft DC-DC converters
  • Satellite power conditioning units
  • Payload power supplies
  • Deep-space and exploration missions
  • Other radiation-tolerant power conversion applications

Original – Infineon Technologies