ROHM Co., Ltd. has developed the new TSC3PAK package for silicon carbide (SiC) MOSFETs, designed to combine the thermal performance of conventional through-hole packages with the manufacturing advantages of surface-mount technology. Measuring 14.00 mm × 18.58 mm × 3.50 mm, the package is intended for power conversion applications in electric vehicles and industrial equipment where efficiency, reliability, and automated assembly are increasingly important.
The TSC3PAK package adopts a top-side heat dissipation structure, placing the heat transfer surface on the top of the package. This design enables automated surface-mount assembly while delivering heat dissipation performance comparable to conventional TO-247-4L through-hole packages. The new package is targeted at applications such as onboard chargers (OBCs) and electric compressors in xEVs, where higher power density and thermal performance are required.
As the adoption of SiC devices expands beyond traction inverters into auxiliary vehicle power systems, manufacturers are increasingly seeking solutions that improve charging performance and vehicle driving range. SiC technology is also gaining traction in industrial applications including photovoltaic inverters and high-performance server power supplies, where energy efficiency is a critical requirement.
Traditionally, SiC power devices have relied on through-hole packages due to their strong thermal performance under high-power operating conditions. However, these packages often require manual assembly processes and can limit efforts to reduce overall system height. Surface-mount SiC devices compatible with automated production lines are therefore becoming increasingly attractive. ROHM developed the TSC3PAK package to address these challenges by providing TO-247-class thermal performance in a surface-mount format.
The package incorporates ROHM’s proprietary groove structure, enabling a creepage distance of 6.66 mm. According to the company, this provides a class-leading creepage specification while maintaining compatibility with widely adopted industry designs. The package supports AC peak voltages of up to 1200 V in Pollution Degree 2 environments, helping simplify insulation design requirements in high-voltage systems while contributing to lower mounting costs and improved system reliability.
Products utilizing the TSC3PAK package are based on ROHM’s fourth-generation SiC MOSFET technology, which combines low ON-resistance with high-speed switching performance. These characteristics help reduce switching losses during power conversion, contributing to improved system efficiency and lower overall power consumption.
Mass production of devices featuring the new package began in June 2026. ROHM also provides simulation models for the entire product lineup through its website to support faster circuit design and evaluation. The company stated that it will continue expanding its SiC MOSFET portfolio to support higher performance, greater miniaturization, and improved reliability across automotive and industrial power electronics applications.
The initial TSC3PAK product lineup includes both consumer and AEC-Q101-qualified automotive devices. The range covers 750 V and 1200 V SiC MOSFETs with typical RDS(on) values ranging from 13 mΩ to 90 mΩ and maximum drain current ratings from 18 A to 102 A.
Target applications include automotive systems such as onboard chargers and electric compressors, as well as industrial equipment including photovoltaic inverters and server power supplies.
Original – ROHM