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Toshiba Electronic Devices & Storage Corporation has introduced the TPM1R408RH, a new 80 V N-channel power MOSFET manufactured using its latest-generation U-MOS11-H process technology. The device is designed for switched-mode power supplies (SMPS) used in AI data centers, communications infrastructure, and other industrial power conversion applications where efficiency, power density, and electromagnetic interference (EMI) performance are increasingly critical.
The rapid expansion of artificial intelligence workloads is significantly increasing power consumption within data centers, while ongoing deployment of advanced communications infrastructure continues to drive demand for more efficient and compact power supplies.
Modern switched-mode power supplies must simultaneously minimize conduction losses, switching losses, thermal dissipation, and electromagnetic interference. Improvements in these areas not only increase energy efficiency but also reduce cooling requirements, simplify thermal management, and enable higher power density.
The TPM1R408RH has been developed specifically to address these evolving design requirements.
The new MOSFET incorporates an optimized device structure that achieves a maximum drain-source on-resistance (RDS(on)) of just 1.4 mΩ.
Compared with Toshiba’s previous-generation 80 V MOSFET, the TPM1R908QM manufactured using the earlier U-MOS X-H process, the new device delivers:
- Approximately 26% lower on-resistance (RDS(on))
- Approximately 45% improvement in the figure of merit (RDS(on) × Qg)
The significant reduction in the combined on-resistance and total gate charge (Qg) improves both conduction and switching performance, enabling lower overall power losses and higher conversion efficiency. According to Toshiba, these characteristics represent industry-leading performance levels for devices in this voltage class.
In addition to improving efficiency, the TPM1R408RH has been designed to suppress drain-source voltage spikes generated during switching events.
Reducing these switching transients helps lower electromagnetic interference (EMI), a major consideration in high-frequency switched-mode power supplies used in AI servers and communications equipment.
By minimizing device-generated voltage overshoot, the MOSFET can simplify system-level EMI mitigation, reducing the need for extensive redesign during later development stages and allowing simpler filter and snubber circuit implementations.
The new MOSFET is housed in Toshiba’s SOP Advance(E) package, which provides significant improvements in both electrical and thermal performance compared with the company’s previous SOP Advance(N) package.
The package delivers:
- Approximately 65% lower package resistance
- Approximately 15% lower thermal resistance
Lower package resistance reduces conduction losses, while improved thermal performance enhances heat dissipation and supports higher output power within compact power supply designs.
These improvements enable designers to increase power density while maintaining reliable thermal operation.
To assist power supply designers, Toshiba provides a comprehensive set of simulation tools for evaluating the new MOSFET.
Available resources include:
- G0 SPICE models for rapid functional verification
- High-accuracy G2 SPICE models capable of reproducing transient switching behavior
- An online browser-based circuit simulator that enables engineers to evaluate circuit performance without installing software or downloading device models
These tools are intended to accelerate design cycles and simplify optimization of switched-mode power supply architectures.
The TPM1R408RH is intended for a wide range of high-efficiency power conversion applications, including:
- AI data center power supplies
- Communications base station power systems
- Industrial switched-mode power supplies
- High-density DC power conversion systems
- Server power infrastructure
- Telecom power equipment
The introduction of the TPM1R408RH reflects Toshiba’s continued investment in next-generation power MOSFET technologies aimed at improving efficiency, reducing power consumption, and enabling higher power density across industrial power electronics.
As AI infrastructure, telecommunications networks, and industrial automation systems continue to demand increasingly efficient power conversion, advanced MOSFET technologies such as the U-MOS11-H platform are expected to play an important role in supporting the next generation of high-performance switched-mode power supplies.
Original – Toshiba
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Magnachip Semiconductor Corporation has appointed Chae Lee as Chief Executive Officer, effective July 1, 2026. Lee is also expected to join the company’s Board of Directors following the commencement of his appointment. He succeeds Camillo Martino, who has served as Interim Chief Executive Officer since August 2025 and will continue in his role as Chairman of the Board of Directors.
The appointment marks a new phase in Magnachip’s leadership as the company continues to expand its focus on power semiconductor technologies and pursue growth opportunities across high-value semiconductor markets.
Lee brings more than three decades of experience in the global semiconductor industry, with expertise spanning power semiconductors, power management integrated circuits (PMICs), sensors, audio amplifiers, and system-level semiconductor solutions. Throughout his career, he has held leadership positions across engineering, applications, sales, marketing, operations, and executive management.
Most recently, Lee served as Chief Executive Officer of Tagore Technology, where he led the company’s development of gallium nitride (GaN) semiconductor technologies for both radio frequency (RF) and power applications.
Prior to joining Tagore Technology, Lee held senior leadership roles at several major semiconductor companies, including Insyte Systems, NXP Semiconductors, and Maxim Integrated Products. During his tenure at Maxim, he played a key role in driving high-margin revenue growth through innovative product development within the company’s mobility business.
According to Chairman Camillo Martino, Lee’s combination of technical expertise, operational leadership, and commercial experience makes him well suited to lead Magnachip through its next stage of growth.
Martino noted that Lee’s background across power integrated circuits and system-level semiconductor solutions closely aligns with Magnachip’s strategy to strengthen its product portfolio, accelerate innovation, and expand its presence in attractive power semiconductor markets.
He also expressed appreciation to the company’s employees for their commitment during the past year and stated that he looks forward to working closely with Lee and the executive leadership team in his continued role as Chairman of the Board.
Commenting on his appointment, Lee described Magnachip as a company with a strong heritage in power semiconductors, experienced engineering talent, valuable manufacturing capabilities, and an expanding pipeline of next-generation products.
He indicated that Magnachip is well positioned to capitalize on long-term growth opportunities across several key markets, including:
- Artificial intelligence (AI)
- Data center infrastructure
- Industrial electronics
- Automotive systems
- Robotics
- Communications equipment
- Computing platforms
- Consumer electronics
Lee also emphasized his commitment to working closely with the Board of Directors and employees to build upon the company’s recent progress while creating long-term value for customers, employees, and shareholders.
Original – Magnachip Semiconductor
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Innoscience has introduced two new all-GaN AC-DC reference designs that leverage the company’s third-generation gallium nitride (GaN) technology to deliver high efficiency, high power density, and compact form factors across applications ranging from consumer fast chargers to industrial power supplies. The new 140 W and 1 kW platforms are designed to accelerate customer development of next-generation power systems for laptops, robotics, e-mobility, telecommunications, and industrial equipment.
As applications including AI-enabled consumer devices, robotics, electric two-wheelers, gaming systems, and industrial automation continue to demand higher power in smaller form factors, designers are increasingly turning to GaN-based power conversion to improve efficiency while reducing system size.
By utilizing GaN throughout the primary power stage, the new reference designs minimize switching losses, enable higher switching frequencies, and reduce passive component size compared with conventional silicon-based implementations.
The INNDAD140C1 targets USB PD 3.1 fast charging applications including laptops, gaming consoles, and other high-performance portable electronics.
The design utilizes a Power Factor Correction (PFC) + Asymmetrical Half-Bridge (AHB) + synchronous rectification architecture with GaN devices throughout the primary stage.
Key specifications include:
- Input voltage: 90–264 VAC
- Maximum output: 28 V / 5 A (140 W)
- Peak efficiency: 96.21%
- 94.25% efficiency at 90 VAC
- Power density: 31.86 W/in³
- PCB dimensions: 60 × 60 × 20 mm
- Standby power: 100 mW
- EN55022 EMI compliant
The primary stage incorporates:
- ISG6117TM 700 V GaN device with integrated lossless current sensing for the PFC stage
- ISG6233AQH integrated 700 V half-bridge GaN device for the AHB stage
- INN100EBD035DAD 100 V GaN device with 3.5 mΩ RDS(on) for synchronous rectification
The design supports switching frequencies up to 140 kHz in the PFC stage and 130 kHz in the AHB converter while maintaining manageable thermal performance.
The reference platform targets:
- USB PD 3.1 laptop chargers
- Gaming console adapters
- High-performance consumer power adapters
The second platform, INNDAD1K0A1, addresses higher-power applications between 500 W and 1 kW, including robotics, battery chargers, telecommunications equipment, and industrial power supplies.
The design combines:
- Bridgeless Totem-Pole PFC
- High-frequency LLC resonant converter
- Synchronous rectification
using GaN devices throughout the primary switching stage.
Key specifications include:
- Input: 90–264 VAC
- Output: 36–54.6 V (48 V nominal)
- Output power:
- 500 W (90–176 VAC)
- 1 kW (176–264 VAC)
- Peak efficiency: 97.1%
- 95.1% efficiency at full load and 90 VAC
- Power density: 60.6 W/in³
- PCB size: 143 × 70 × 27 mm
The bridgeless totem-pole PFC employs:
- INN650TA050C
- ISG6123TA
The ISG6123TA integrates gate-drive clamping while providing:
- Over-current protection
- Over-temperature protection
- Miller clamp functionality
The LLC resonant stage utilizes INN650TA080BS GaN devices in TOLL packages with Kelvin Source connections to reduce parasitic inductance and support higher-frequency operation.
On the secondary side, INN150EB022EAD 150 V GaN devices provide synchronous rectification with low on-resistance and compatibility with standard DFN5×6 footprints.
The 1 kW reference design targets:
- Robot battery chargers
- Quadruped robot charging systems
- Electric motorcycle and e-bike chargers
- Telecommunications power supplies
- Networking equipment
- Industrial power supplies
- Horticultural lighting systems
With these two reference designs, Innoscience is expanding its GaN ecosystem beyond discrete devices by providing complete evaluation platforms that allow engineers to accelerate product development while achieving higher efficiency, greater power density, and reduced system size.
The company positions the 140 W and 1 kW platforms as development tools that demonstrate the performance advantages of all-GaN AC-DC power conversion across both consumer and industrial applications while helping customers shorten design cycles and accelerate time-to-market.
Original – Innoscience Technology
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Soitec and ZenSemi have announced a strategic collaboration to enable high-volume manufacturing of 300 mm Bipolar-CMOS-DMOS on Silicon-on-Insulator (BCD-on-SOI) technologies, targeting next-generation power electronics for artificial intelligence (AI) data centers, electric vehicles (EVs), humanoid robots, and industrial applications.
Under the partnership, Soitec will supply its advanced 300 mm Power-SOI engineered substrates to ZenSemi, supporting the development and production ramp of a new BCD-on-SOI manufacturing platform. By combining Soitec’s expertise in engineered semiconductor substrates with ZenSemi’s specialty foundry capabilities, the companies aim to provide fabless semiconductor companies and integrated device manufacturers (IDMs) with a high-performance manufacturing solution optimized for advanced power management integrated circuits (PMICs) and mixed-signal devices.
Compared with conventional BCD-on-bulk technologies, BCD-on-SOI provides significant advantages in both circuit integration and operational reliability.
The technology utilizes full dielectric isolation, which inherently eliminates parasitic latch-up while substantially reducing electrical crosstalk and parasitic coupling between circuit elements. These characteristics enable high-voltage power stages and sensitive low-voltage analog and digital control circuitry to be integrated onto a single chip with greater density and improved robustness.
As a result, BCD-on-SOI offers a highly reliable platform capable of supporting the increasing power density, performance, and functional safety requirements of modern power electronics.
The new 300 mm manufacturing platform is intended to address the growing demand for advanced power management solutions across several rapidly expanding markets, including:
- AI data center power distribution systems
- Electric vehicle battery management systems (BMS)
- Energy storage systems (ESS)
- Automotive power electronics requiring functional safety (FuSa)
- Humanoid robotics
- Industrial automation and power control
These applications require increasingly sophisticated mixed-signal devices capable of integrating precision analog circuitry with high-voltage power management while maintaining high reliability under demanding operating conditions.
The collaboration brings together complementary capabilities across the semiconductor value chain.
Soitec contributes its industry-leading engineered Power-SOI substrate technology, which has become a key enabling platform for advanced analog, RF, and power semiconductor applications.
ZenSemi contributes specialty foundry expertise, including process development and high-volume manufacturing capabilities focused on power electronics technologies. According to the companies, the partnership leverages ZenSemi’s experience in international power semiconductor manufacturing standards while building on Soitec’s established leadership in engineered substrate innovation.
René Jonker, Chief Product Officer at Soitec, stated that the collaboration demonstrates the growing maturity of China’s BCD-on-SOI ecosystem and establishes a new benchmark for advanced power electronics manufacturing by combining high-quality engineered substrates with specialized foundry capabilities.
ZenSemi also reported successful first-silicon validation with its lead customer.
The company demonstrated an 18-channel analog front-end (AFE) device implemented using the new SOI-based process, achieving approximately a 30% reduction in die size compared with traditional bulk BCD technologies.
According to ZenSemi, the result validates the inherent advantages of SOI technology for:
- Higher integration density
- Smaller chip area
- Improved circuit robustness
- Enhanced electrical isolation
Reducing die size not only lowers manufacturing costs but can also improve yield and enable greater functionality within the same silicon footprint.
As part of the partnership, ZenSemi plans to rapidly expand its 300 mm SOI-BCD manufacturing capacity to support commercial production.
Once fully ramped, the manufacturing platform is expected to serve both Chinese semiconductor design companies and international customers developing advanced power management ICs for automotive, AI infrastructure, industrial automation, and other high-growth applications.
Ruby Yan, Vice President of Sales & Marketing at ZenSemi, stated that the combination of Soitec’s engineered substrates and ZenSemi’s manufacturing platform will enable customers to develop smaller, more robust, and more cost-effective power ICs while addressing the rapidly growing demands of AI, automotive, and industrial markets.
By combining advanced substrate technology with high-volume specialty manufacturing, Soitec and ZenSemi aim to strengthen the ecosystem for next-generation BCD-on-SOI solutions and support the increasing power management requirements of AI, electrification, robotics, and industrial automation.
Original – Soitec
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Infineon Technologies has been identified as “the company to beat” in AI data center power semiconductors in Gartner’s recent report, AI Vendor Race: Infineon Is the Company to Beat in AI Data Center Power Semiconductors. According to the report, Infineon’s leadership is driven by its comprehensive product portfolio, extensive manufacturing capabilities, and early investments in advanced semiconductor technologies, particularly silicon carbide (SiC) and gallium nitride (GaN).
The recognition highlights Infineon’s growing role in addressing one of the industry’s most significant challenges: delivering highly efficient power conversion solutions capable of supporting the rapidly increasing power demands of AI data centers.
A key differentiator identified in the Gartner report is Infineon’s ability to provide semiconductor solutions across the entire AI power delivery chain rather than focusing on individual subsystems.
Infineon’s portfolio spans every major stage of power conversion, including:
- Solid-state transformers (SSTs)
- Power supply units (PSUs)
- Energy storage systems (ESS)
- Intermediate bus converters (IBCs)
- Processor-level voltage regulation and power management
This “grid-to-core” approach enables system designers to optimize efficiency throughout every power conversion stage, helping reduce cumulative energy losses across hyperscale AI data centers while improving overall system reliability and thermal performance.
As AI server racks continue moving toward significantly higher power levels, efficient power conversion at every stage has become increasingly critical to reducing operational costs and meeting sustainability objectives.
Infineon’s competitive advantage is further strengthened by its broad semiconductor technology portfolio, which combines conventional silicon with wide-bandgap semiconductor technologies.
According to Gartner, the company’s early investments in silicon carbide and gallium nitride position it well for next-generation AI infrastructure, particularly emerging 800 VDC power architectures.
Infineon applies each semiconductor technology where it offers the greatest system benefit:
- Silicon carbide (SiC) for high-voltage, high-efficiency power conversion from the utility grid to rack-level infrastructure.
- Gallium nitride (GaN) for high-frequency, high-power-density intermediate conversion stages.
- Silicon (Si) for processor-level power management and control functions.
By selecting the optimal semiconductor material for each conversion stage, Infineon aims to minimize energy losses while maximizing power density and overall system efficiency.
While Gartner identifies Infineon as the current market leader, the report also notes that competition is intensifying.
Growing investment in SiC and GaN technologies, along with competitors focused on processor-level and compute-board power delivery, is increasing competitive pressure throughout the AI power semiconductor ecosystem.
Infineon’s response centers on leveraging its broad product portfolio and system-level expertise to deliver integrated power solutions that span the entire power delivery architecture rather than isolated components.
Infineon projects approximately €2.5 billion in AI-related revenue during fiscal year 2027, reflecting the company’s expectations for continued expansion across AI infrastructure markets.
The forecast is supported by demand for increasingly efficient power delivery systems capable of supporting next-generation AI clusters, high-density GPU servers, and higher-voltage power architectures.
While AI data centers remain a major growth opportunity, Infineon is also expanding its focus toward Physical AI applications.
The company is working with system integrators, technology partners, and data center operators to develop next-generation AI power architectures while simultaneously supporting emerging intelligent machines including:
- Humanoid robots
- Collaborative robots (cobots)
- Autonomous systems
- Intelligent industrial automation
Infineon’s portfolio extends beyond power semiconductors to include:
- Microcontrollers
- Power management solutions
- Sensors
- Connectivity technologies
- Functional safety solutions
- Cybersecurity technologies
This broad technology base enables the company to support complete electronic platforms for intelligent machines capable of sensing, processing information, and interacting safely with the physical world.
Infineon also highlighted the significant long-term opportunity represented by Physical AI.
Based on industry projections referenced by the company, the global robotics market could reach up to $1.7 trillion by 2050, with approximately 300 million humanoid robots deployed worldwide. Given an estimated semiconductor bill of materials of around $500 per humanoid robot, the company views intelligent robotics as one of the largest future growth opportunities for the semiconductor industry.
From electrical grid infrastructure through AI data centers to autonomous machines operating in factories and commercial environments, Infineon continues to position its semiconductor portfolio around the complete AI ecosystem, spanning both digital infrastructure and the rapidly emerging Physical AI market.
Original – Infineon Technologies
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onsemi and Synaptics Incorporated have entered into a definitive agreement under which onsemi will acquire Synaptics in an all-stock transaction valued at approximately $7 billion. The acquisition is intended to significantly expand onsemi’s capabilities beyond power semiconductors and sensing into intelligent, system-level solutions spanning edge artificial intelligence (AI), wireless connectivity, and human-machine interface technologies.
Under the terms of the agreement, Synaptics shareholders will receive 1.350 shares of onsemi common stock for each Synaptics share, representing an approximately 19% premium based on the companies’ 10-day volume-weighted average share prices prior to the announcement. Following completion of the transaction, Synaptics shareholders are expected to own approximately 12% of the combined company on a fully diluted basis.
The acquisition marks a significant strategic step in onsemi’s evolution toward becoming a provider of complete intelligent systems. By combining Synaptics’ Edge AI computing platform, wireless connectivity technologies, and human-machine interface (HMI) portfolio with onsemi’s established strengths in power management, sensing, automotive electronics, industrial automation, and AI data center infrastructure, the combined company aims to address the rapidly growing Physical AI market.
According to onsemi, the acquisition has the potential to expand its total addressable market (TAM) by approximately $30 billion, increasing it to an estimated $243 billion by 2030. The company expects the combined technology portfolio to enable integrated solutions that can sense, process, communicate, and control real-world systems across a wide range of applications.
onsemi President and CEO Hassane El-Khoury emphasized that artificial intelligence is increasingly moving beyond cloud computing into physical systems such as automobiles, industrial equipment, robotics, and intelligent infrastructure. He noted that next-generation Physical AI applications require the seamless integration of four fundamental technology pillars:
- Power
- Sensing
- Connected computing
- Control
The acquisition of Synaptics is expected to provide onsemi with immediate edge computing capabilities while expanding its software ecosystem and enabling the delivery of more comprehensive intelligent systems solutions.
Synaptics contributes several strategic technology assets to the combined company, including its Astra Edge AI platform, which integrates:
- AI-optimized processors
- Neural processing units (NPUs)
- Multimodal AI capabilities
- Wi-Fi connectivity
- Bluetooth connectivity
- GPS technologies
- Open-source software development environment
These technologies are designed to support intelligent edge devices requiring local AI processing with low latency and reduced cloud dependence.
Synaptics President and CEO Rahul Patel described the transaction as an opportunity to combine Synaptics’ strengths in Edge AI, connectivity, and human-machine interfaces with onsemi’s leadership in intelligent power and sensing to create integrated hardware and software platforms across the entire Edge AI stack.
The companies expect the combination to deliver several strategic advantages:
- Extend onsemi’s presence from AI infrastructure into intelligent edge systems
- Expand capabilities in automotive, industrial, robotics, augmented reality (AR), and virtual reality (VR)
- Accelerate development of integrated system-level solutions
- Increase semiconductor content per customer platform
- Deepen long-term customer relationships through combined hardware, software, and connectivity offerings
- Strengthen participation in higher-value markets with greater software and intellectual property content
The transaction is expected to generate attractive financial benefits, including:
- Accretion to non-GAAP earnings per share within approximately 18 months after closing
- Approximately $200 million in expected annual cost synergies
- Gross margins consistent with onsemi’s long-term financial objectives
- Continued commitment to onsemi’s existing capital return policy during the transaction process
The acquisition has been unanimously approved by the boards of directors of both companies. In addition, one member of the Synaptics Board of Directors is expected to join onsemi’s Board following completion of the transaction.
The transaction is anticipated to close in mid-2027, subject to:
- Approval by Synaptics shareholders
- Required regulatory approvals
- Satisfaction of customary closing conditions
Both companies reaffirmed their previously issued financial guidance. onsemi reiterated its second-quarter 2026 outlook, while Synaptics reaffirmed its fiscal fourth-quarter 2026 guidance.
If completed, the acquisition would represent one of the largest strategic transactions in the semiconductor industry focused on Edge AI and Physical AI. By combining power semiconductors, sensing technologies, embedded AI processing, wireless connectivity, and software platforms, the merged company aims to establish a comprehensive portfolio capable of supporting next-generation intelligent systems across automotive, industrial automation, robotics, AI infrastructure, and connected edge computing markets.
Original – onsemi
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Dynex Semiconductor has announced the development of a new 450 A, 650 V gallium nitride (GaN) half-bridge power module designed to deliver ultra-fast switching performance, high efficiency, and advanced thermal management for next-generation power conversion systems.
As demand grows for higher energy efficiency, increased power density, and more compact power electronics, wide-bandgap semiconductor technologies are becoming increasingly important. While silicon carbide (SiC) devices have driven significant improvements in high-power conversion systems, gallium nitride (GaN) technology offers additional advantages in applications where switching speed and efficiency are critical performance drivers.
The new module is based on Gallium Nitride High Electron Mobility Transistors (HEMTs), which offer several key advantages over conventional silicon IGBTs and silicon carbide MOSFETs.
GaN devices support significantly faster switching speeds, enabling operation at higher frequencies while reducing switching losses. Unlike silicon and SiC devices, GaN HEMTs do not contain an intrinsic body diode, eliminating reverse recovery losses and improving efficiency during high-frequency operation.
Additional benefits include lower gate charge and output capacitance, which reduce gate-drive power requirements and improve overall system efficiency. These characteristics allow designers to shrink passive components such as inductors and capacitors, contributing to higher power density and more compact system architectures.
Dynex’s new power module combines GaN semiconductor technology with an advanced packaging approach designed to minimize electrical parasitics and maximize performance.
Key specifications include:
- 450 A continuous current capability
- 650 V blocking voltage
- Half-bridge inverter configuration
- Planar PCB embedding technology
- Double-sided cooling architecture
- Ultra-low commutation loop inductance below 1 nH
A key differentiator is the use of planar PCB embedding technology, which significantly reduces parasitic inductance within the power loop. Maintaining loop inductance below 1 nH enables exceptionally fast switching while minimizing voltage overshoot, ringing, and electromagnetic interference (EMI).
The embedding process also facilitates precise matching and balancing of parallel GaN devices, helping ensure uniform switching characteristics and improved module reliability under high-current operation.
To support high power density and continuous operation, the module incorporates a double-sided cooling architecture. By providing thermal paths on both sides of the semiconductor devices, the design minimizes junction-to-coolant thermal resistance and improves heat extraction efficiency.
This enhanced thermal management capability enables higher power throughput while maintaining safe operating temperatures, helping improve both system reliability and long-term performance.
The combination of ultra-low electrical parasitics and efficient thermal management allows the module to operate effectively in applications where both switching speed and power density are critical requirements.
The 450 A, 650 V GaN module is intended for a broad range of high-performance power conversion systems, including:
- Electric vehicle power electronics
- Renewable energy inverters
- Battery energy storage systems (BESS)
- AI and data center power supplies
- Fast charging infrastructure
- Industrial power conversion equipment
- High-frequency power electronics platforms
The development highlights the growing role of GaN technology in medium-voltage, high-current power conversion applications. While GaN has traditionally been associated with lower-power and high-frequency systems, advancements in packaging, thermal management, and device integration are enabling its expansion into increasingly demanding industrial and infrastructure applications.
By combining high current capability, low inductance packaging, and double-sided cooling, Dynex’s new 450 A, 650 V GaN module demonstrates how wide-bandgap technologies can support the industry’s push toward higher efficiency, greater power density, and more compact power conversion architectures.
As electrification, renewable energy deployment, AI infrastructure growth, and advanced industrial automation continue to accelerate, GaN-based power modules such as this are expected to play an increasingly important role in enabling the next generation of efficient power electronics systems.
Original – Dynex Semiconductor
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Infineon Technologies AG has announced that BRC Solar GmbH has selected its CoolGaN™ Transistor 100 V devices as the core switching technology for the company’s Power Optimizer platform.
The CoolGaN Transistor 100 V family combines high switching performance and power-handling capability in a compact 3 mm × 5 mm package, enabling panel-level maximum power point tracking (MPPT) with high efficiency and power density for solar energy applications. The design win highlights the increasing adoption of gallium nitride technology in renewable energy systems, where efficiency, compact size, and cost effectiveness are key design considerations.
According to Infineon, the CoolGaN Transistor 100 V family enables advanced panel-level MPPT functionality, helping solar systems maximize energy generation under varying operating conditions. The technology is designed to support high switching frequencies, low switching losses, and reduced electromagnetic interference compared with conventional silicon-based solutions.
Johannes Schoiswohl, Senior Vice President and General Manager of Infineon’s GaN Business Line, stated that the adoption of CoolGaN technology by BRC Solar demonstrates the practical benefits of gallium nitride devices in renewable energy applications. He noted that the technology enables higher efficiency, increased power density, and advanced monitoring capabilities while maintaining a compact system footprint.
In rooftop solar installations, partial shading of a single panel can significantly reduce the output of an entire string when maximum power point tracking is implemented only at the string level. Infineon noted that its CoolGaN technology supports cost-effective panel-level MPPT optimization, allowing individual panels to operate closer to their maximum performance and reducing the impact of shading on overall system output.
The company added that the combination of low switching losses, high-frequency operation, and compact package size makes CoolGaN particularly well suited for power optimizer applications, where efficiency, size constraints, and regulatory compliance requirements must be addressed simultaneously.
Pascal Ruisinger, Chief Financial Officer of BRC Solar GmbH, stated that the company has recognized the potential of gallium nitride technology since its founding and views it as an important enabler for high-performance solar power optimizers. He added that both companies share a common goal of utilizing advanced technologies to support the deployment of efficient and affordable renewable energy solutions.
Infineon highlighted that its CoolGaN portfolio includes both discrete and integrated solutions covering a broad range of voltage and power levels. This flexibility enables designers to optimize performance, efficiency, and cost across a wide variety of renewable energy applications.
The resulting Power Optimizer solutions are intended to provide improved energy yield and system performance for residential and commercial rooftop solar installations.
Additional information about Infineon’s CoolGaN portfolio is available through the company’s official channels, while BRC Solar will also showcase its Power Optimizer M600-E and M605-M solutions at The smarter E Europe 2026 exhibition.
Original – Infineon Technologies
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Renesas Electronics Corporation has announced the promotion of Gaurang Shah to Senior Vice President, effective July 1, 2026. Shah will continue in his current role as General Manager of Embedded Processing, where he leads one of the company’s core product organizations focused on microcontrollers, microprocessors, and embedded computing solutions.
Shah was appointed Vice President and General Manager of Embedded Processing on January 1, 2026, following organizational changes aimed at strengthening integration between Renesas’ embedded processing and connectivity businesses. The restructuring was designed to improve coordination across key technology platforms and support the company’s strategy of delivering more comprehensive, system-level semiconductor solutions.
In his current role, Shah is responsible for overseeing the Embedded Processing Product Group, a critical business unit within Renesas that serves automotive, industrial, infrastructure, consumer, and IoT markets. The organization plays a central role in the development of the company’s microcontroller (MCU), microprocessor (MPU), and embedded processing portfolios, which form the foundation of many of Renesas’ integrated hardware and software platforms.
Shah has also served as a member of Renesas’ Enterprise Leadership Team, contributing to the company’s broader strategic and operational direction.
According to Renesas, the promotion recognizes Shah’s leadership and contributions to advancing the company’s embedded processing business while strengthening its ability to deliver integrated semiconductor solutions to customers worldwide.
The appointment comes as Renesas continues to expand its focus on system-level solutions that combine embedded processing, connectivity, analog, power management, and software capabilities. Embedded processing remains a key growth area for the company, driven by increasing demand for intelligent edge computing, industrial automation, automotive electrification, software-defined systems, and connected devices.
By elevating Shah to Senior Vice President, Renesas reinforces the strategic importance of its embedded processing organization and its role in supporting the company’s long-term growth and technology roadmap.
Original – Renesas Electronics
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AlpSemi has successfully completed a €17 million funding round led by Yotta Capital, with participation from SE Ventures, Navitas Semiconductor, and Cycle Group. The financing will support the industrialization and commercial scale-up of AlpSemi’s next-generation semiconductor power switches designed for solid-state circuit breakers (SSCBs) targeting residential and commercial buildings as well as emerging 800 V DC AI data center power architectures.
The company is developing semiconductor technologies intended to enable a transition from traditional electromechanical protection systems toward fully solid-state, digitally controlled power distribution and protection networks. The funding is expected to accelerate both product commercialization and the expansion of AlpSemi’s semiconductor roadmap.
According to Chief Executive Officer Frédéric Dupont, the financing represents an important milestone in AlpSemi’s ambition to become a major industrial player in power electronics. The company’s strategy focuses on advancing semiconductor technologies required for the large-scale deployment of solid-state circuit breakers, which are expected to play an increasingly important role in future electrical infrastructure.
AlpSemi’s technology strategy spans semiconductor materials, device architectures, and system-level integration, creating a vertically integrated platform designed to address challenges associated with next-generation power protection and power conversion systems.
Chief Technology Officer Fabrice Letertre noted that the company’s approach extends beyond incremental device improvements by leveraging both wide-bandgap and ultra-wide-bandgap semiconductor technologies. These technologies are intended to provide a scalable foundation for future generations of solid-state circuit breaker products across multiple voltage classes and application areas.
SSCBs represent a significant evolution in electrical protection systems by replacing mechanical interruption mechanisms with semiconductor-based switching and digital control. Compared with conventional electromechanical breakers, SSCBs can provide:
- Real-time monitoring, control, and protection
- Faster fault response and system protection
- Improved energy efficiency
- Higher reliability in both AC and DC systems
- Enhanced scalability for modern electrified infrastructures
The technology is increasingly relevant as electricity demand grows due to artificial intelligence workloads, electrification, distributed energy resources, and the adoption of direct current (DC) power architectures.
Investors highlighted the growing demand for advanced power protection technologies driven by electrification, AI infrastructure expansion, and energy efficiency requirements.
Yotta Capital emphasized that AlpSemi’s technology platform addresses critical challenges associated with next-generation electrical infrastructure and aligns with broader investment themes focused on low-carbon industrial technologies.
SE Ventures noted that widespread adoption of SSCBs will be a key enabler of the digitalization of electrical distribution networks and viewed AlpSemi as representative of a new generation of industrial technology companies combining semiconductor innovation with strong market demand.
AlpSemi has already launched its first commercial product, the AS800 semiconductor power switch, designed for solid-state miniature circuit breakers operating in 110 V and 230 V electrical systems.
Key attributes of the AS800 include:
- High power density
- Compact system integration
- Support for distributed energy resources
- Enhanced flexibility for modern electrical networks
The product has been developed through a global supply chain involving multiple international partners and is positioned for large-scale industrial deployment. The newly raised capital will support expanded commercialization activities.
While the AS800 serves residential and commercial applications, AlpSemi’s longer-term roadmap extends into higher-voltage power protection systems, including 800 V DC architectures being developed for next-generation AI data centers.
As AI infrastructure scales, data center operators are increasingly exploring high-voltage DC distribution to improve power conversion efficiency and reduce energy losses. These architectures require advanced protection technologies capable of handling higher voltages, faster fault isolation, and increased power density.
Navitas Semiconductor CEO Chris Allexandre noted that the transition toward 800 V DC power systems will require new approaches to power distribution and protection. He highlighted AlpSemi’s technology platform as being specifically designed to address these emerging requirements, supporting intelligent power distribution systems for energy-intensive AI computing environments. Navitas will support AlpSemi both as an investor and strategic partner.
The funding positions AlpSemi at the intersection of several major industry trends:
- Electrification of buildings and industry
- Digitalization of electrical distribution systems
- AI-driven growth in data center power demand
- Adoption of 800 V DC architectures
- Expansion of distributed energy resources
- Increased focus on energy efficiency and grid modernization
By focusing on semiconductor-enabled solid-state protection technologies, AlpSemi aims to become a key enabler of next-generation electrical infrastructure spanning residential, commercial, industrial, and AI data center markets.
Original – AlpSemi
