Nexperia has announced the launch of its 1200 V silicon carbide (SiC) MOSFET portfolio in QDPAK packaging, expanding its wide-bandgap (WBG) product family with a top-side cooled surface-mount solution designed for high-power-density and thermally demanding applications.

The new devices are engineered for high-efficiency, high-voltage power conversion systems, combining the electrical performance of Nexperia’s SiC technology with simplified thermal management and mechanical integration. The result is improved power density, higher output power capability, enhanced efficiency, and better thermal performance in compact system designs.

Available in both industrial-grade and automotive-qualified versions, the portfolio includes RDS(on) options of 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ. This range provides a scalable QDPAK platform suitable for applications spanning high-power industrial systems to space-constrained designs with demanding thermal and mechanical requirements. The addition of QDPAK complements Nexperia’s existing package portfolio and offers designers greater flexibility in optimizing efficiency, thermal performance, and power density.

The QDPAK package addresses one of the key challenges in high-voltage power conversion systems: effective heat dissipation. By enabling a direct thermal path from the semiconductor die to the heatsink through the top side of the package, the design reduces dependence on the PCB as the primary heat-spreading medium. This allows the thermal management of the semiconductor and PCB to be handled more independently, simplifying overall system design.

According to Nexperia, compared with conventional D2PAK-7 packaging, top-side cooled solutions can deliver up to 3 kW higher output power while operating within comparable thermal limits. They can also provide approximately 40°C additional thermal headroom at the same power level. Building on the company’s existing X.PAK platform, the QDPAK package further extends power handling capability, enabling operation at roughly 3 kW higher power levels at similar case temperatures while offering around 23°C additional thermal headroom under comparable operating conditions.

The devices are well suited for a wide range of applications, including electric vehicle onboard chargers (OBCs), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives, and data center power systems. The package enables engineers to optimize both electrical and mechanical aspects of system design while addressing increasingly stringent power density requirements.

Gaetano Pignataro, Head of the SiC & IGBT Product Group at Nexperia, said that as wide-bandgap technologies continue to transform power conversion design, engineers are facing new thermal, mechanical, and efficiency challenges as systems become more compact, denser, and more power intensive. He noted that the company’s 1200 V SiC MOSFETs in QDPAK combine the performance advantages of its SiC technology with the thermal benefits of top-side cooling, providing designers with a practical and scalable solution for next-generation high-power applications.

Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging combine the advantages of top-side cooled surface-mount technology with the electrical characteristics required for efficient high-voltage power conversion. The devices feature excellent RDS(on) temperature stability, supporting predictable conduction losses and reliable operation at elevated junction temperatures. Their low-inductance package design and controlled switching behavior contribute to efficient operation, while the inclusion of a dedicated Kelvin source pin enables faster commutation and improved switching control. This helps designers reduce ringing, manage electromagnetic interference (EMI), and improve overall switching performance in demanding power applications.

Original – Nexperia