ROHM Co., Ltd. has announced that its 750 V silicon carbide (SiC) MOSFET has been adopted in a battery backup unit (BBU) designed for AI server power supplies. The selection comes as AI server power systems transition toward higher-voltage architectures and high-voltage direct current (HVDC) power distribution to support the growing demands of generative AI applications.
As AI accelerators continue to deliver increasing levels of performance and the adoption of generative AI expands, power consumption within data centers is rising significantly. To reduce transmission losses and improve overall efficiency, the industry is increasingly moving toward HVDC power architectures. Within these systems, BBUs and capacitor units (CUs), which provide power compensation at the server-rack level, are becoming increasingly important for protecting systems and safeguarding large volumes of data during power outages, voltage fluctuations, and other abnormalities.
The adopted device is ROHM’s SCT4013DLL, a 750 V SiC MOSFET used in the power supply section of a ±400 V AI server power architecture. By utilizing the inherent characteristics of SiC technology, the device offers a maximum junction temperature (Tj) of 175°C, enabling stable operation in BBU applications where heat generation increases due to higher operating voltages and greater power density.
ROHM noted that next-generation 800 VDC power architectures typically deliver approximately 560 V to the battery pack inside the BBU. As a result, the company’s 750 V-rated SiC MOSFETs are also suitable for deployment in these emerging power systems.
HVDC power supplies for next-generation AI servers require backup systems capable of handling high voltages and large currents with rapid response times while minimizing power losses during abnormal operating conditions. To address these requirements, SiC power devices that combine high-voltage capability, low-loss operation, and high-temperature tolerance are expected to play a central role in future power control systems.
As demand continues to grow across AI server and data center markets, ROHM plans to further expand the development and supply of power devices based on SiC, gallium nitride (GaN), and silicon technologies. The company also intends to support higher power efficiency through solutions that integrate these power devices with analog ICs and related technologies.
Original – ROHM