Navitas Semiconductor announced its participation in NVIDIA’s Partner Ceremony held on May 29, 2026, at the Taipei Nangang Exhibition Center. The event brought together ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration aimed at advancing next-generation AI data centers based on emerging 800 VDC rack architectures.
As part of the NVIDIA AI Factory MGX™ Ecosystem Showcase at COMPUTEX 2026 in Taipei, taking place from June 2–5, Navitas is demonstrating its 800 V-to-6 V DC-DC power delivery board (PDB). Powered by the company’s GaNFast™ technology, the PDB eliminates the need for a traditional 48 V intermediate bus converter (IBC) stage within compute server trays, enabling greater system efficiency, reliability, and board-space utilization.
The power delivery board incorporates sixteen 650 V, 11 mΩ GaNFast FETs in the company’s latest DFN8×8 dual-cooled package. The design targets 97.5% peak efficiency while operating at a switching frequency of 1 MHz and achieving a power density of 2,100 W/in³. The ultra-low-profile design is approximately 20% thinner than a mobile phone, allowing close integration with GPU boards to enhance transient response and improve power distribution efficiency.
“As AI workloads continue to scale and drive unprecedented demand for compute, power delivery has become one of the most critical challenges in enabling next-generation gigawatt AI factories,” said Chris Allexandre, President and CEO of Navitas. “Through our collaboration with NVIDIA within the MGX™ ecosystem, Navitas is delivering GaN and SiC power technologies that enable megawatt-scale AI server racks with higher power density, a smaller system footprint, and improved thermal performance, helping accelerate the transition to more efficient and scalable AI infrastructure.”
Navitas also highlighted its portfolio of wide-bandgap power technologies designed to support next-generation AI factory infrastructure. The company’s GeneSiC™ silicon carbide (SiC) solutions address power delivery requirements from the electrical grid to AI compute racks, supporting applications such as solid-state transformers (SSTs) with 2300 V and 3300 V SiC power modules, as well as high-power three-phase power supply units based on its fifth-generation 1200 V SiC MOSFET technology.
According to the company, these SiC technologies contribute to improved efficiency, increased power density, and enhanced system reliability in large-scale AI data center deployments.
Navitas’ GaNFast technology is designed to provide the high-frequency, high-efficiency DC-DC power conversion required to support increasing power demands from AI accelerators and GPUs. By leveraging the switching performance of gallium nitride devices, the company’s solutions enable MHz-frequency operation, higher power density, and faster transient response, facilitating more efficient power delivery from the rack level to the processor level.
Through its portfolio of GaN and SiC technologies, Navitas continues to collaborate with NVIDIA within the MGX ecosystem to support open and modular AI infrastructure architectures and contribute to the development of next-generation AI factory platforms.
Original – Navitas Semiconductor