Infineon Technologies AG has introduced the H-DPAK, a new addition to its top-side cooling package portfolio that integrates half-bridge devices based on 750 V CoolSiC™ Generation 2 technology. Designed to address evolving requirements in automotive and industrial power conversion systems, the new package combines high-performance silicon carbide technology with a compact, scalable form factor optimized for advanced power architectures.
The H-DPAK integrates a complete unidirectional half-bridge power stage within a single package. It incorporates a split lead-frame design with optimized drain pads that improve heat spreading and support clearance compliance in dense, high-power layouts. The package also maintains the industry-standard 2.3 mm height used by Infineon’s established Q-DPAK and TOLT packages, enabling seamless board-level integration and drop-in compatibility.
The new package is designed for liquid-cooling-ready systems and helps reduce parasitic loop inductance, supporting cleaner high-speed switching operation. By enabling higher switching frequencies, the H-DPAK contributes to reduced passive component size and improved overall system efficiency while leveraging the performance characteristics of CoolSiC technology, including optimized RDS(on) × QOSS and RDS(on) × Qrr performance, as well as robustness under avalanche, overload, and short-circuit conditions.
Infineon positions the H-DPAK half-bridge as a core switching building block that can be adapted to a broad range of power conversion topologies. Its integrated architecture supports more compact designs where board space utilization and total cost of ownership are key considerations. Compared with discrete board-level solutions, the H-DPAK enables higher switching frequencies, improving dynamic performance and allowing more compact magnetic components.
Target applications include:
• Next-generation HVDC AI power supply units utilizing five-level active neutral point clamped (5L ANPC) topologies
• HVDC battery and capacitor backup units
• Solid-state transformers
• Residential solar and energy storage systems
• Humanoid robot charging systems
• Two-stage and single-stage onboard chargers (OBCs)
• DC-DC converters
• Auxiliary power systems for electric vehicles (xEVs)
The integrated 750 V CoolSiC G2 technology features low gate charge (Qg) to reduce gate-drive losses, high dv/dt capability for high-frequency operation, and wide gate-bias tolerance that enhances design margins while supporting compatibility with existing gate-driver architectures. These characteristics make the solution suitable for high-power automotive and industrial applications where switching efficiency and robustness are critical.
With the introduction of the H-DPAK, Infineon further expands its top-side cooled packaging portfolio, providing a solution designed to support native liquid cooling and the increasing performance demands of next-generation power conversion systems.
Samples of the H-DPAK devices are available now.
Original – Infineon Technologies