Infineon Technologies AG has introduced the EiceDRIVER™ 2EDL90xG3, a 120 V gate driver featuring a common footprint architecture that enables both silicon (Si) and gallium nitride (GaN) power designs to be implemented on the same PCB. The new driver is designed to simplify technology evaluation and accelerate the transition between Si and GaN solutions, particularly in high-density power applications such as AI data centers.
As AI data center power requirements continue to increase, power system designers are seeking greater flexibility to evaluate different semiconductor technologies without redesigning circuit boards. The 2EDL90xG3 addresses this challenge by supporting both 48 V and high-voltage intermediate bus converter (HV IBC) applications while minimizing redesign effort during technology migration. A built-in 5 V gate clamp further simplifies GaN gate-driver power supply design and contributes to improved system efficiency.
The 2EDL90xG3 offers five configurable operating modes, allowing support for a wide range of power conversion topologies. Its dual floating output architecture, combined with the integrated 5 V gate clamp, enables hybrid switched-capacitor (HSC) topologies for both silicon and GaN-based designs.
The device provides gate drive capability of 4 A source current and 6 A sink current, offering the performance required for driving the secondary stage of high-voltage intermediate bus converters. It also integrates a high-bandwidth current-sensing amplifier with a typical bandwidth of 5 MHz and common-mode voltage capability of up to 35 V. This integration reduces overall bill of materials (BoM) requirements while supporting higher power density.
The current-sensing amplifier delivers a typical full-scale accuracy of 1%, enabling precise control-loop regulation as well as rapid overcurrent and short-circuit protection. In addition, an integrated bootstrap diode helps reduce component count and board space in half-bridge and full-bridge converter designs.
The EiceDRIVER 2EDL90xG3 is housed in a compact 16-pin 3 mm × 3 mm QFN package.
Infineon has optimized the driver for use across its AI server power delivery portfolio, which spans the complete power chain from grid to processor core. This includes applications such as solid-state transformers, circuit breakers, power supply units, battery backup systems, intermediate bus converters, and second-stage DC power conversion modules.
By supporting silicon, silicon carbide (SiC), and gallium nitride technologies within a unified power architecture, the company aims to provide designers with a scalable path toward next-generation AI server power systems. The portfolio is supported by common design resources and a range of high-performance power components developed for emerging AI infrastructure requirements.
Samples of the 2EDL900G3 and 2EDL901G3 are available now.
Original – Infineon Technologies