Infineon Technologies AG has introduced a new family of silicon carbide (SiC) bidirectional switches (BDS) based on its 750 V CoolSiC™ Generation 2 technology. The new devices integrate two power switches into a single component through a vertically integrated dual-die, common-drain architecture housed in a top-side-cooled Q-DPAK package, simplifying system design and enabling new power conversion topologies.
The 750 V CoolSiC BDS is designed to support modern power systems requiring high efficiency, reliability, and long-term operational robustness. According to Infineon, the devices deliver strong performance across key switching parameters, including optimized RDS(on) × Qrr, low RDS(on) × QOSS, and low gate charge (Qg), helping to reduce both switching and conduction losses while enabling ultra-fast switching operation.
The devices feature a typical gate threshold voltage (VGS(th)) of 4.5 V at 25°C and an ultra-low QGD/QGS ratio that improves immunity against parasitic turn-on. In addition, an extended transient gate-bias tolerance ranging from -11 V to +25 V increases design margin and compatibility with existing gate-driver solutions. Rated for dv/dt performance up to 200 V/ns, the devices support high-frequency switching applications while maintaining durability and reliability. The initial product portfolio will cover on-resistance values ranging from 14 mΩ to 66 mΩ.
Designed for demanding power conversion environments, the 750 V CoolSiC BDS offers a breakdown voltage of 840 V, providing additional margin for systems operating at bus voltages above 500 V. The devices also feature proven avalanche robustness, overload endurance up to 200°C for 100 hours, and a short-circuit withstand capability of 2 µs. These characteristics help protect systems from voltage surges, transient stress, energy pulses, and inrush current events, supporting fault-tolerant operation over the product lifetime.
The new bidirectional switches further expand Infineon’s top-side-cooled product portfolio and support native liquid-cooling implementations in high-power applications. The company notes that the technology enables new levels of energy efficiency through the adoption of advanced power conversion topologies.
In automotive applications, the 750 V CoolSiC BDS is intended for onboard chargers (OBCs), EV charging systems, eFuse implementations, and pre-charge circuits. When combined with Infineon’s CoolSiC H-DPAK half-bridge devices, the solution supports the transition toward single-stage silicon carbide-based onboard charger architectures, enabling compact, high-power-density designs with improved space and cost efficiency.
For industrial applications, the technology is targeted at a range of emerging use cases, including:
• HVDC AI power supplies with native liquid cooling
• Residential solar and energy storage systems
• HVAC systems for hospitals and onsite data centers
• Current source inverter (CSI) drives for eVTOL platforms
• HVDC protection systems for power infrastructure and IT racks
• Fast-charging systems for humanoid robot fleets
Sampling of the 750 V CoolSiC bidirectional switch family has already commenced.
Original – Infineon Technologies