Infineon Technologies AG is expanding its CoolSiC™ JFET portfolio to address increasing demand from AI data centers and the growing adoption of solid-state power protection systems. The expanded portfolio includes new devices, package options, and configurations designed to support high-performance power distribution and protection applications.

The company announced that its first 750 V and 1200 V CoolSiC JFET devices in Q-DPAK packages, originally introduced last year, are now entering mass production. At PCIM Europe 2026, Infineon will also showcase additional package options and normally-off variants, further broadening its discrete power semiconductor offering for applications such as solid-state circuit breakers (SSCBs), battery disconnect switches, and power distribution systems used in AI data centers. Target applications include power supply units (PSUs), power backup units (PBUs), and intermediate bus converter (IBC) hot-swap and eFuse designs.

In these applications, power semiconductors spend most of their operating life in the on-state, while fault conditions occur only briefly and infrequently. As a result, conduction losses, linear mode robustness, and avalanche capability become critical performance parameters.

To address these requirements, Infineon is introducing a 1200 V CoolSiC JFET in the widely used TO-247-4 package. Offering on-resistance values starting at 5.0 mΩ, the device enables direct replacement in existing SiC MOSFET designs utilizing standard through-hole packages without requiring PCB redesign.

The company is also expanding the portfolio with normally-off CoolSiC JFET solutions that combine a CoolSiC JFET and an OptiMOS™ low-voltage silicon MOSFET within a single package.

The Dual Drive configuration provides independent access to both the SiC JFET and silicon MOSFET gates, allowing designers greater flexibility and control at the PCB level. The configuration also supports overdrive operation at VGS = 2 V, reducing RDS(on) by approximately 10%. The 750 V Dual Drive version is available in both TOLL and Q-DPAK packages, while the 1200 V variant is offered in Q-DPAK.

Infineon is also introducing a Cascode configuration, where the SiC JFET gate is internally connected and only the MOSFET gate is externally accessible. This design allows operation with standard gate drivers without requiring specialized gate-drive circuitry. The Cascode solution is targeted at applications where both switching and conduction losses are important design considerations. The 750 V Cascode version is available in a TOLL package.

The production-ready CoolSiC JFET devices in Q-DPAK packages offer RDS(on) values as low as 1.6 mΩ for the 750 V version and 2.3 mΩ for the 1200 V version, positioning them among the lowest-resistance SiC devices currently available in these voltage classes.

All devices are based on Infineon’s .XT interconnection technology utilizing diffusion soldering, which enhances thermal performance and improves robustness under pulsed and cyclic operating conditions. The devices are qualified under real-world operating environments to support reliable operation during overload and fault events.

According to Infineon, solid-state protection solutions based on CoolSiC JFET technology can achieve switching speeds that are orders of magnitude faster than traditional electromechanical protection systems. This capability helps reduce equipment damage, minimize downtime, and extend system operating life.

In AI data center environments, rapid fault isolation supports the protection of high-value computing and memory assets while enabling higher power density and improved uptime. For industrial applications, including solid-state circuit breakers, relays, and battery management systems, the devices provide long-term conduction reliability together with fast fault response capabilities.

With the addition of Q-DPAK, TO-247-4, and TOLL package options, as well as normally-on, Dual Drive, and Cascode configurations, Infineon now offers a comprehensive CoolSiC JFET discrete portfolio covering a broad range of on-resistance levels, gate-drive approaches, and assembly requirements.

The CoolSiC JFET 750 V and 1200 V devices in Q-DPAK packages are scheduled to enter mass production in 2026. Engineering samples of the additional TO-247-4, Dual Drive, and Cascode variants are currently available, with mass production also planned for 2026.

Infineon will showcase its expanded CoolSiC JFET discrete portfolio at PCIM Europe 2026 in Nuremberg, Germany, at Hall 7, Booth 470.

Original – Infineon Technologies