STMicroelectronics has expanded its STPOWER portfolio with a new family of 700 V gallium nitride (GaN) power transistors designed to improve efficiency and increase power density in medium- and high-power applications.
The new enhancement-mode PowerGaN HEMTs target rapidly growing markets including AI servers, robotics, industrial power supplies, smart-grid infrastructure, and advanced electrification systems. By extending GaN technology into higher power levels, ST aims to address increasing performance demands that are challenging the limits of conventional silicon-based power solutions.
The new portfolio consists of seven devices with current ratings ranging from 6 A to 29 A and typical RDS(on) values between 53 mΩ and 270 mΩ. The devices leverage the inherent advantages of GaN technology, including low conduction losses, extremely low switching losses at high frequencies, low gate charge, and zero reverse recovery characteristics.
These features enable operation at significantly higher switching frequencies, allowing reductions in the size of magnetic components and passive elements while increasing overall power density and lowering system operating temperatures.
From a packaging standpoint, the devices are available in DPAK, TO-LL, and PowerFLAT surface-mount packages. TO-LL and PowerFLAT versions include Kelvin source connections that improve noise immunity, enhance gate-driver performance, and support cleaner switching behavior.
Original – STMicroelectronics