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Efficient Power Conversion will showcase its latest Gen 7 gallium nitride (GaN) power technologies at PCIM Europe 2026, focusing on humanoid robotics, drone propulsion, compact motion systems, and AI power delivery applications.
The company’s demonstrations center on how high-frequency GaN devices enable smaller, lighter, and more efficient motion-control and power-conversion architectures. EPC’s latest integrated ePower Stage ICs, including the EPC33110 and EPC2310x families, target compact three-phase motor drives for humanoid joints, robotic arms, and drone propulsion systems. These devices support operation up to 100 V with current capability up to 35 A, delivering high switching frequency and improved power density for intelligent motion systems.
EPC will also highlight multiple low-voltage GaN FETs optimized for AI infrastructure and high-density DC-DC conversion, including:
- EPC2366 (40 V, 0.84 mΩ) for synchronous rectification,
- EPC2361 (100 V, 0.75 mΩ),
- EPC2304 and EPC2305 for isolated DC-DC conversion,
- New Gen 7 devices such as EPC2370, EPC2377, EPC2378, and EPC2375 in compact dual-cooled QFN packages.
The company will demonstrate these components across several reference platforms, including:
- Three-phase inverter boards for robotic and drone propulsion,
- High-density isolated converters for AI servers,
- Totem-pole PFC stages,
- Intermediate bus converters and synchronous buck architectures.
A major strategic theme is EPC’s positioning of low-voltage GaN as a core enabling technology for both intelligent motion systems and AI computing infrastructure. The company emphasizes that higher switching frequencies allow reductions in passive component size, system weight, and thermal complexity while improving transient response and overall efficiency.
Beyond robotics and drones, EPC will showcase how the same GaN platform supports compact electrified systems such as e-bikes and power tools, while also scaling into multi-kilowatt AI server power architectures.
Original – Efficient Power Conversion
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L&T Semiconductor Technologies Ltd has entered into a multi-year licensing agreement with Synopsys to strengthen its advanced power electronics design capabilities and accelerate development of next-generation power modules and intelligent power modules (IPMs).
Under the agreement, LTSCT will deploy Synopsys’ AI-enabled multiphysics simulation technologies to optimize semiconductor designs across chip, package, and system levels. The collaboration is aimed at improving design efficiency, reducing development cycles, and enhancing reliability in high-voltage power electronics applications.
The partnership focuses particularly on intelligent power modules operating from 1.2 kV up to 10 kV, where increasingly complex electrical, thermal, and mechanical interactions require advanced simulation-driven design methodologies. AI-assisted modeling will enable simultaneous optimization across multiple domains, reducing prototyping requirements and accelerating commercialization.
Strategically, the collaboration strengthens India’s emerging semiconductor ecosystem by expanding domestic design capabilities in power electronics—a critical area for electric vehicles, renewable energy, industrial automation, and smart manufacturing.
LTSCT plans to develop highly integrated module architectures combining power semiconductors, gate drivers, protection circuits, and control logic within compact form factors. By leveraging AI-driven simulation and digital design workflows, the company aims to improve overall system robustness while lowering development costs.
From a market perspective, this agreement reflects the growing importance of software-defined semiconductor development, particularly in advanced power modules where thermal management, packaging, and reliability are becoming key differentiators. It also highlights the increasing convergence of AI, multiphysics simulation, and power semiconductor design as companies race to accelerate innovation cycles.
The collaboration further positions LTSCT as a strategic domestic player in India’s expanding power semiconductor landscape while reinforcing Synopsys’ role as a critical enabler of next-generation semiconductor system design.
Original – L&T Semiconductor Technologies
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Cyient Semiconductors has announced the launch of its first gallium nitride (GaN) power device family for the Indian market, developed using technology licensed from Navitas Semiconductor.
The launch marks a significant milestone for India’s domestic power semiconductor ecosystem, positioning Cyient Semiconductors as a new entrant in the high-performance GaN market. The initial portfolio includes seven integrated 700 V GaN power devices designed for applications such as AI data centers, telecom infrastructure, consumer fast chargers, industrial power systems, and e-mobility platforms.
The devices integrate driver, control, protection, EMI management, and current sensing functions within compact DPAK packages, simplifying system design and accelerating product development. The portfolio spans multiple resistance levels from 120 mΩ to 330 mΩ, supporting both QR and PFC/high-side topologies.
Strategically, the collaboration builds on an agreement announced in late 2025 under which Cyient licenses Navitas’ GaN technology for deployment in India. In addition to local commercialization, Cyient will act as a second-source supplier for selected Navitas products already in production, strengthening supply chain resilience and supporting domestic sourcing initiatives aligned with India’s “Make in India” strategy.
From a technology perspective, GaN devices offer substantial advantages over traditional silicon, including higher switching speeds, lower losses, and improved thermal efficiency. These benefits are increasingly critical in AI infrastructure and compact high-power systems where efficiency and power density directly impact operating costs and scalability.
Looking ahead, Cyient plans to expand the portfolio through partnerships with local OSAT providers, with a long-term goal of enabling domestic manufacturing of GaN power devices in India. This phased approach reflects a broader industry trend toward regional semiconductor ecosystems and localized supply chains.
From a market standpoint, the announcement highlights India’s growing ambition to participate more actively in advanced power semiconductor technologies, particularly in strategically important segments such as AI infrastructure, telecom power, and electrification.
Original – Cyient Semiconductors
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Infineon Technologies AG has expanded its XHP™ 2 power module portfolio with new 2300 V CoolSiC™ MOSFET variants, targeting next-generation high-voltage renewable energy and energy storage systems.
The new silicon carbide modules are designed to support DC-link voltages up to 1500 V, aligning with the industry shift toward higher-voltage architectures aimed at improving efficiency and reducing system complexity. The modules are offered with RDS(on) values ranging from 1 mΩ to 2 mΩ and isolation voltages of either 4 kV or 6 kV, enabling flexibility across various high-power applications.
By leveraging SiC technology, the modules significantly reduce switching and conduction losses compared to conventional silicon solutions. This enables higher inverter efficiency, increased power density, and operation at higher switching frequencies, which can reduce harmonic distortion and shrink overall system size.
The devices are packaged in Infineon’s XHP 2 platform, featuring symmetrical switching characteristics that simplify paralleling in large power converters. The modules also integrate Infineon’s .XT interconnection technology to improve reliability and extend operational lifetime. Optional pre-applied thermal interface material further simplifies assembly and enhances thermal consistency.
Infineon highlighted measurable system-level performance improvements, including power densities reaching 300 kW/L in wind power demonstrations and semiconductor losses below 0.7% of output power in battery storage applications.
From a market perspective, the launch reflects accelerating demand for higher-voltage, high-efficiency power conversion in renewable energy infrastructure, utility-scale battery storage, and grid modernization projects. As system voltages continue rising to improve energy transmission efficiency, 2300 V SiC devices are emerging as a key enabling technology.
Strategically, Infineon is strengthening its position in the rapidly growing high-voltage SiC market, where scalability, efficiency, and reliability are becoming critical differentiators for renewable energy and industrial power systems.
Original – Infineon Technologies
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Infineon Technologies AG has launched its 2026 Startup Challenge, a global innovation initiative aimed at accelerating the development of humanoid robotics technologies through collaboration with startups and emerging deep-tech companies.
The program is part of Infineon’s broader Co-Innovation Program, which combines semiconductor expertise with startup-driven innovation to develop scalable, market-ready solutions. The 2026 edition specifically targets technologies supporting humanoid robotics and physical AI applications.
Key technology focus areas include advanced sensing systems such as virtual skin and hand concepts, environmental perception using camera and radar fusion, interaction technologies based on laser projection systems, and precision motor control solutions for robotic movement and actuation.
Strategically, the initiative highlights Infineon’s growing focus on humanoid robotics as a long-term semiconductor growth market. Power management, sensing, connectivity, and motor control are all critical semiconductor-intensive functions in next-generation robotics platforms, positioning Infineon to expand its role beyond traditional automotive and industrial markets.
Participating startups will gain access to Infineon hardware and software development platforms, technical mentoring, prototyping support, and investor exposure. The program culminates in demonstration and pitch sessions attended by industry representatives and deep-tech investors.
From a market perspective, the challenge reflects increasing industry recognition that humanoid robotics and physical AI could become major future semiconductor demand drivers. As robotics systems evolve toward greater autonomy and real-world interaction, demand is expected to increase for advanced sensors, efficient power devices, embedded processing, and motion-control semiconductors.
The initiative also aligns with broader European industrial policy goals, as the program receives support under the IPCEI framework for microelectronics and computer technology, reinforcing Europe’s ambition to strengthen strategic semiconductor and robotics ecosystems.
Original – Infineon Technologies
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Infineon Technologies AG announced that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed a prior ruling that Innoscience infringed an Infineon gallium nitride (GaN) patent, resulting in import and sales bans against Innoscience products in the United States.
The ruling confirms the ITC’s December 2025 initial determination and represents a significant development in the increasingly competitive GaN power semiconductor market. The decision remains subject to a 60-day presidential review period before becoming fully effective.
Infineon emphasized that the ruling reinforces the strength of its GaN intellectual property portfolio and its commitment to protecting proprietary technologies. The company currently holds approximately 450 GaN patent families and continues to expand its position as a leading integrated device manufacturer (IDM) in wide-bandgap semiconductors.
The dispute extends beyond the U.S. market. In Germany, Infineon is also pursuing multiple patent and utility model infringement cases against Innoscience, including a previous favorable ruling from the Munich District Court in 2025. Additional hearings are scheduled for 2026.
Strategically, the case highlights the growing importance of intellectual property as GaN adoption accelerates across AI data centers, renewable energy, industrial automation, and electric vehicles. As competition intensifies—particularly among Asian and European suppliers—control over core device architectures and manufacturing processes is becoming increasingly critical.
The decision also comes as Infineon advances its 300 mm GaN manufacturing strategy, positioning itself for large-scale production and cost competitiveness. Combined with its established silicon and silicon carbide portfolios, Infineon continues pursuing a multi-material power semiconductor strategy aimed at supporting next-generation high-efficiency power systems.
From a broader industry perspective, the ruling may influence competitive dynamics in the global GaN market, potentially affecting supplier access, pricing strategies, and partnership decisions as customers increasingly prioritize technology ownership, manufacturing scale, and long-term supply security.
Original – Infineon Technologies
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Power Integrations reported first-quarter 2026 revenue of $108.3 million, representing sequential growth of 5% and a 3% increase year-over-year, reflecting improving demand conditions across key industrial and energy markets.
GAAP net income for the quarter was $3.3 million, or $0.06 per diluted share, while non-GAAP net income reached $13.9 million, or $0.25 per diluted share. Operating cash flow remained solid at $20.0 million.
The company highlighted particularly strong momentum in its industrial segment, where revenue increased 23% year-over-year. Growth was driven by applications including renewable energy, battery storage, home automation, and automotive systems.
Strategically, Power Integrations emphasized increasing opportunities tied to electrification and AI infrastructure. The company noted that rising power requirements from EVs and AI data centers are accelerating demand for higher-efficiency power conversion technologies such as its PowiGaN™ platform, while also indirectly driving investment in renewable energy, energy storage, and DC transmission infrastructure.
Management indicated that R&D and long-term strategy are increasingly focused on these high-growth sectors, positioning the company to capitalize on structural trends in power efficiency and grid modernization.
For the second quarter of 2026, Power Integrations expects revenue between $115 million and $120 million, with non-GAAP operating margins projected in the range of 13.5% to 15.5%, signaling expectations for continued operational improvement.
From a market perspective, the results reflect improving industrial semiconductor demand following prior cyclical weakness, while reinforcing the growing importance of high-voltage power semiconductors in AI infrastructure, renewable energy systems, and electrification applications.
Original – Power Integrations
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Axcelis Technologies reported first-quarter 2026 financial results slightly above expectations, supported by continued strength in memory-related demand and growth in its customer support and installed base business.
Revenue for Q1 2026 reached $199.0 million, up modestly from $192.6 million in the prior-year period. However, profitability declined, with GAAP net income falling to $9.2 million from $28.6 million a year earlier, reflecting lower margins and continued market softness in certain end segments. Gross margin declined to 40.5% from 46.1%, while operating margin dropped to 4.0%.
The company highlighted DRAM and high-bandwidth memory (HBM) demand as key growth drivers, benefiting from accelerating AI infrastructure deployment. Customer support and installed-base services (CS&I) also remained a strategic strength, becoming increasingly important as Axcelis expands its global installed equipment footprint.
At the same time, management noted that continued digestion of excess capacity in power semiconductor and mature-node markets is offsetting growth in memory. This reflects ongoing cyclical weakness in portions of the power semiconductor ecosystem following significant investment expansion over the past several years.
Despite the softer margin environment, Axcelis maintained a strong balance sheet with approximately $570 million in cash and continued positive free cash flow generation, providing flexibility to support future growth initiatives and ongoing R&D investments.
Looking ahead, the company expects second-quarter 2026 revenue of approximately $205 million and anticipates a stronger second half of the year supported by improving order trends. Axcelis also reaffirmed expectations for its planned merger with Veeco Instruments to close in the second half of 2026.
From a market perspective, Axcelis’ results reinforce the divergence currently shaping semiconductor capital equipment markets: strong AI-driven memory investment, particularly in HBM, contrasted with slower recovery in mature-node and power semiconductor capacity additions. The company’s growing services business also highlights a broader industry trend toward recurring revenue streams and lifecycle support as installed tool bases expand globally.
Original – Axcelis Technologies
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Infineon Technologies AG reported solid results for Q2 FY2026 and raised its full-year outlook, citing accelerating demand from AI data centers, power infrastructure, and industrial applications.
For the quarter, Infineon generated revenue of €3.812 billion with a Segment Result of €653 million, corresponding to a Segment Result Margin of 17.1%. Looking ahead to Q3 FY2026, the company expects revenue of approximately €4.1 billion and profitability in the high-teens percentage range.
Infineon also upgraded its full-year FY2026 guidance. The company now expects significant year-over-year revenue growth, improved gross margins in the low-to-mid 40% range, and a Segment Result Margin around 20%. Free cash flow expectations were also increased, reflecting stronger operating momentum and improved profitability.
A major driver behind the upgraded outlook is the continued AI infrastructure boom. Infineon highlighted particularly strong demand for power supply solutions used in AI data centers, where high-efficiency power conversion and power distribution technologies are becoming increasingly critical. The company also pointed to accelerating investment in power infrastructure as an important growth catalyst for its industrial business.
In automotive, Infineon reported positive traction in software-defined vehicle platforms and continued market share gains, although demand in the high-voltage e-mobility segment remains challenging.
Strategically, Infineon announced an organizational restructuring that will reduce its business segments from four to three starting in Q4 FY2026. The new structure will consist of Automotive (ATV), Power Systems (PS), and Edge Systems (ES), aimed at streamlining decision-making and accelerating deployment of system-level solutions.
From a market perspective, the results reinforce Infineon’s strong positioning at the intersection of AI power delivery, industrial electrification, and automotive semiconductors. The company continues to benefit from structural demand growth for efficient power semiconductors, particularly in silicon carbide and GaN-enabled power architectures supporting AI data centers and next-generation energy systems.
Original – Infineon Technologies
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Navitas Semiconductor reported first-quarter 2026 results showing sequential revenue growth as the company continues its transition toward higher-power applications centered on AI infrastructure, industrial electrification, and energy systems.
Revenue for Q1 2026 reached $8.6 million, up 18% sequentially from Q4 2025, although still below the $14.0 million reported in the prior-year quarter. The company highlighted that high-power applications now represent a growing majority of revenue, reflecting its strategic shift away from legacy mobile and consumer markets.
Non-GAAP gross margin improved slightly to 39.0%, while GAAP gross margin remained negative due to restructuring impacts and operating scale challenges. Navitas reported a GAAP operating loss of $27.8 million, though losses improved versus the previous quarter following restructuring actions. Cash and equivalents stood at $221 million at quarter-end.
Strategically, Navitas emphasized its “Navitas 2.0” transformation, positioning both GaN and high-voltage SiC technologies as key enablers of next-generation AI data center power architectures. During the quarter, the company showcased several high-profile developments, including:
- An 800 V-to-6 V GaN-based power delivery board targeting AI data centers with up to 97.5% peak efficiency
- A 250 kW solid-state transformer demonstrator developed with EPFL using 3300 V and 1200 V SiC technology
- Expanded 5th-generation SiC MOSFET packaging solutions optimized for AI server power supplies
The company also strengthened leadership by appointing semiconductor veteran Gregory Fischer to its board as part of its broader transformation strategy.
Looking ahead, Navitas expects Q2 2026 revenue to grow to approximately $10 million, representing another quarter of double-digit sequential growth, alongside modest gross margin improvement.
From a market perspective, the results illustrate a broader industry trend: wide-bandgap semiconductor vendors are increasingly pivoting toward AI-driven power infrastructure opportunities. Navitas is positioning itself at the intersection of GaN and high-voltage SiC adoption, targeting fast-growing segments such as AI data centers, grid infrastructure, and industrial electrification.
While profitability remains a challenge, the company’s expanding engagement in high-power systems and AI-related architectures indicates growing traction in markets with significantly larger long-term revenue potential than its historical mobile-focused business.
Original – Navitas Semiconductor
