Infineon Technologies AG has expanded its CoolGaN™ BDS 40 V G3 family with two new bidirectional switch devices, the IGK048B041S and IGK120B041S, targeting compact consumer electronics such as smartphones, notebooks, and wearables.
The new GaN-based devices integrate the functionality of two back-to-back silicon MOSFETs into a single component, enabling up to 82% PCB footprint reduction while cutting component count in half. This directly addresses increasing pressure on designers to maximize power efficiency within highly space-constrained mobile devices.
Available in ultra-compact wafer-level chip-scale packages, the devices deliver low on-resistance values of 4.2 mΩ and 9 mΩ while maintaining compatibility with standard 5 V gate drivers. Infineon emphasized that the architecture enables designers to reuse existing driver layouts, simplifying adoption and accelerating product development.
From a performance standpoint, the CoolGaN bidirectional switches offer significantly lower gate charge and substantially reduced leakage current compared to competing solutions. Lower gate charge improves switching speed and reduces switching losses, supporting more efficient fast-charging systems and better thermal management.
Unlike traditional silicon MOSFETs that rely on body diodes, the new devices provide true bidirectional voltage and current blocking. This capability is particularly important in USB overvoltage protection, load switching, and power multiplexing applications where reverse current prevention is critical for protecting sensitive electronics.
Original – Infineon Technologies