Micro Commercial Components (MCC) has introduced the SICWT40120G6M, a 1200 V silicon carbide Schottky diode designed to address switching losses, thermal stress, and reliability challenges in high-voltage, high-frequency power conversion systems.
Traditional rectifier solutions can increase power dissipation, require larger cooling solutions, and limit achievable power density, particularly in high-current and high-temperature environments. The new device is intended to improve efficiency and reliability in these demanding operating conditions.
The SICWT40120G6M is built on merged PiN Schottky (MPS) technology, enabling zero reverse recovery behavior along with low forward voltage and very low leakage current. These characteristics significantly reduce switching and conduction losses in high-frequency power conversion applications.
The diode supports high continuous and surge current capability and operates across a wide junction temperature range from −55°C to +175°C. A positive temperature coefficient helps maintain stable operation and reduces the risk of thermal runaway in high-power systems.
The device is packaged in a TO-247AD package designed for strong thermal performance, supporting efficient heat dissipation and enabling more compact and reliable system designs.
According to MCC, the new SiC diode targets applications including industrial power conversion, transportation systems, and EV charging infrastructure, where high efficiency, thermal robustness, and compact design are critical requirements.
Original – Micro Commercial Components