Micro Commercial Components (MCC) has introduced its Gen4 SiC Schottky Diode Series, a new family of high-voltage silicon carbide (SiC) Schottky Barrier Diodes aimed at improving efficiency and thermal performance in demanding power conversion designs. The series includes devices rated at 650 V and 1200 V peak repetitive reverse voltage (VRRM), supporting high-voltage rectification needs across industrial, automotive and energy infrastructure applications.
The new diodes are offered in DPAK, D2-PAK and TO-220AC packages, giving designers multiple options to balance footprint, mechanical integration and heat dissipation. MCC positions the lineup for systems where higher power density and robust thermal management are critical.
Built on Gen4 SiC technology, the devices deliver negligible reverse recovery charge (Qrr) and a low forward voltage drop, typically ≤ 1.65 V at rated current. As majority-carrier devices, SiC Schottky diodes avoid minority-carrier storage effects found in conventional silicon rectifiers, which helps reduce switching losses and supports higher-frequency operation.
MCC said the Gen4 SiC Schottky Diode Series is intended to enable higher switching efficiency, lower thermal losses and improved power density in high-voltage power stages.
Key features and benefits include negligible Qrr for reduced switching losses, low forward voltage drop to minimize conduction losses, fast switching capability for higher-frequency designs, and a positive temperature coefficient of forward voltage to support thermal stability. Package options include DPAK for compact layouts with PCB-based heat spreading, D2-PAK for higher-power thermal performance, and TO-220AC for through-hole mounting with low thermal resistance.
Original – Micro Commercial Components